Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
FEATURES
•
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
•
Interdigitated structure provides
high emitter efficiency
•
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
•
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
•
Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.8 GHz and 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
FO-231 glued cap metal ceramic
flange package, with emitter
connected to flange.
Top view
handbook, 4 columns
LFE18500X
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common emitter class AB
amplifier.
MODE OF
OPERATION
Class AB
(CW)
f
(GHz)
1.85
V
CE
(V)
24
I
CQ
(A)
0.2
P
L1
(W)
≥48
G
po
(dB)
≥7
η
C
(%)
Z
i
; Z
L
(Ω)
typ. 42 see Figs 7
and 8
PINNING - FO-231
PIN
1
2
3
collector
base
emitter connected to flange
DESCRIPTION
1
c
b
3
2
3
e
MAM045 - 1
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
December 1994
2
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
t
≤
10 s; note 1
T
mb
= 75
°C
CONDITIONS
open emitter
R
BE
= 220
Ω
open base
open collector
LFE18500X
MIN.
−
−
−
−
−
MAX.
45
30
22
3
12
20
120
+200
200
235
UNIT
V
V
V
V
A
W
W
°C
°C
°C
f = 1.85 GHz; V
CE
= 24 V; class AB
−
−
−65
−
−
handbook, halfpage
160
MLC430
P tot
(W)
120
80
40
0
0
50
100
150
200
o
T mb ( C)
Fig.2 Power derating curve.
December 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
j
= 100
°C
LFE18500X
MAX.
1
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
PARAMETER
collector cut-off current
collector-emitter breakdown voltage
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
C
= 30 mA; R
BE
= 56
Ω
I
C
= 30 mA
I
E
= 30 mA
I
C
= 1 A; V
CE
= 5 V
−
30
45
3
15
MIN.
MAX.
6
−
−
−
100
UNIT
mA
V
V
V
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
in a common emitter class AB amplifier.
MODE OF
OPERATION
Class AB (CW)
f
(GHz)
1.85
V
CE
(V)
24
I
CQ
(A)
0.2
P
L1
(W)
≥48
typ. 53
G
po
(dB)
≥7
typ. 7.5
η
C
(%)
typ. 42
Z
i
; Z
L
(Ω)
see Figs 7
and 8
December 1994
4
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