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3PMT110A

产品描述Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-15, PLASTIC, POWERMITE-2
产品类别分立半导体    二极管   
文件大小214KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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3PMT110A概述

Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-15, PLASTIC, POWERMITE-2

3PMT110A规格参数

参数名称属性值
是否Rohs认证不符合
Objectid1960663512
零件包装代码DO-15
包装说明R-PSSO-G2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
YTEOL0
最小击穿电压122 V
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-15
JESD-30 代码R-PSSO-G2
JESD-609代码e0
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压110 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式GULL WING
端子位置SINGLE

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3PMT5.0A thru 3PMT170A
POWERMITE
Low Profile 1500 Watt
Transient Voltage Suppressor
®
SCOTTSDALE DIVISION
DESCRIPTION
These 1500 watt transient voltage suppressors offer power-handling capabilities
only found in larger packages. They are most often used for protecting against
transients from inductive switching environments or induced secondary lightning
effects as found in lower surge levels of IEC61000-4-5. With very fast response
®
times, they are also effective in protection from ESD or EFT. Powermite package
features include a full metallic bottom that eliminates the possibility of solder-flux
entrapment during assembly. They also provide unique locking tab acting as an
integral heat sink. With its very short terminations, parasitic inductance is minimized
to reduce voltage overshoots during fast-rise-time transients
.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional
(C suffix for bi-directional)
APPLICATIONS / BENEFITS
Secondary lightning transient protection
Inductive switching transient protection
Small footprint
Very low parasitic inductance for minimal
voltage overshoot
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively and
IEC61000-4-5 for surge levels defined herein
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps at 8.3 ms
(excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Thermal resistance: 2.5°C / watt junction to tab
130°C / watt junction to ambient with
recommended footprint
Lead and mounting temperature: 260°C for 10 sec
MECHANICAL AND PACKAGING
Terminals tin-lead plated
Two-leads on side internally connected together
Cathode designated with band (unidirectional)
Body marked with P/N without 3PMT prefix
(ie. 5.0A, 5.0CA, 12A, 12CA, 170A, 170CA, etc.)
Molded epoxy package meets UL94V-0
Weight: 0.072 grams (approximate)
Tape & Reel packaging per EIA-481-2
(16 mm - 6000 units/reel)
ELECTRICAL CHARACTERISTICS
MICROSEMI
PART NUMBER
STANDOFF
VOLTAGE
V
WM
VOLTS
3PMT5.0A
3PMT6.0A
3PMT6.5A
3PMT7.0A
3PMT7.5A
3PMT8.0A
3PMT8.5A
3PMT9.0A
3PMT10A
3PMT11A
3PMT12A
5
6
6.5
7
7.5
8
8.5
9.0
10
11
12
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
6.40
6.67
7.22
7.78
8.33
8.89
9.94
10.0
11.1
12.2
13.3
CLAMPING
VOLTAGE
V
C
@ I
PP
(FIGURE 4)
VOLTS
MAX
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
PEAK PULSE
CURRENT
I
PP
(FIGURE 4)
AMPS
163.0
145.6
133.9
125.0
116.3
110.3
104.2
97.4
88.2
82.4
75.3
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
1000
1000
500
200
100
50
25
10
5
5
5
TEMPERATURE
COEFFICIENT
OF V
BR
α
V(BR)
%/°C
MAX
.057
.059
.061
.065
.067
.070
.073
.076
.078
.081
.082
3PMT
Copyright
2003
12-6-2002 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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