The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 25 September 1999.
INCH-POUND
MIL-PRF-19500/225F
25 June 1999
SUPERSEDING
MIL-S-19500/225E
15 April 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
TYPES 2N1711, 2N1711S, 2N1890, 2N1890S,
JAN AND JANTX
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Two levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See 3.3 (similar to TO-5).
1.3 Maximum ratings.
Type
1/
P
T
2/
T
C
= +25°C
W
P
T
3/
T
A
= +25°C
W
V
CBO
V dc
V
EBO
V dc
7
7
I
C
mA dc
500
500
V
CER
R
BE
= 10
Ω
V dc
50
80
T
J
and T
STG
°C
-65 to +200
-65 to +200
2N1711
3.0
0.8
75
2N1890
3.0
0.8
100
1/ Also applies to the corresponding "S" suffix device.
2/ Derate linearly at 17.2 mW/°C for T
C
> +25°C.
3/ Derate linearly at 4.57 mW/°C for T
A
> +25°C.
1.4 Primary electrical characteristics.
Limits
h
FE1
1/
h
FE2
1/
V
CE
= 10 V dc
I
C
= 10
µA
dc
V
CE
= 10 V dc
I
C
= 150 mA dc
|h
fe
|
f = 20 MHz
V
CE
= 10 V dc
I
C
= 50 mA dc
V
CE(SAT)
2N1711 2/
I
C
= 150 mA dc
I
B
= 50 mA dc
V dc
0.2
1.5
2N1890 2/
I
C
= 50 mA dc
I
B
= 5.0 mA dc
V dc
0.2
1.2
Min
Max
20
100
300
3.5
12
1/ Pulsed (see 4.5.1).
2/ Also applies to the corresponding "S" suffix device.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/225F
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.021
0.41
0.53
see notes 7, 8, 13
.016
.019
0.41
0.48
---
.050
---
1.27
.250
---
6.35
---
---
.050
---
1.27
.029
.045
0.74
1.14
.028
.034
0.71
0.86
---
.010
---
0.25
45° TP
45° TP
Note
6
7,8
7,8
7,8
7,8
5
3,4
3
10
6
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall
be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition
(MMC) relative to tab at MMC. The device may be measured by direct methods or by the
gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL
minimum. Diameter is uncontrolled in L
1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector (case).
13. For 2N1711S and 2N1890S, dimension LL = .5 inches (12.70 mm) min. and .75 inches (19.05 mm) max.
For 2N1711 and 2N1890, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.
FIGURE 1. Physical dimensions (similar to TO-5).
2
MIL-PRF-19500/225F
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MIL-
PRF-19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, MIL-HDBK-6100, and herein.
3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750 and MIL-PRF-19500.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, the country of origin may be
omitted from the body of the transistor.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I.
3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.4).
3
MIL-PRF-19500/225F
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANTX level). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The
following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be
acceptable.
|
| Screen (see
| table IV of
| MIL-PRF-19500)
|
|
1/
|
|
|
9
|
|
| 11
|
|
| 12
|
|
| 13
|
|
|
|
|
Measurement
|
|
JANTX level only
|
| Thermal impedance (see 4.3.2)
|
|
| Not applicable
|
|
| h
FE2
; I
CBO1
|
|
| See 4.3.1
|
|
|
∆I
CBO1
= 100 percent of initial value
| or 5 nA dc; whichever is greater;
|
∆h
FE2
=
±15
percent of initial value;
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1/ Thermal impedance shall be performed anytime after sealing
provided temperature cycling is performed in accordance with
MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
T
A
= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5).
P
T
= 800 mW;
2N1711, 2N1711S: V
CB
= 24 V dc.
2N1890, 2N1890S: V
CB
= 48 V dc.
NOTE: No heat sink or forced air cooling of the devices shall be permitted.
4
MIL-PRF-19500/225F
4.3.2 Thermal impedance Z
θJX
measurements (for qualification only). The Z
θJX
measurements shall be performed in accordance
with MIL-STD-750, method 3131.
a). IM measurement current.......................................................................................10 mA.
b). IH forward heating current ....................................................................................50 mA minimum.
c). tH heating time......................................................................................................10 ms.
d). tMD measurement delay time ...............................................................................100
µs
minimum.
e). VCE collector - emitter voltage..............................................................................10 V dc.
The maximum limit for Z
θJX
under these test conditions is Z
θJX
(max) = 58°C/W.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. The
test conditions for Z
θJX
shall be those used in 4.3.2.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIb (JANTX) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2
herein.
Subgroup
B3
Method
1027
Condition
T
A
= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5);
T
J
= 150°C min; V
CB
= 24 V dc for 2N1711 and 2N1711S; V
CB
= 48 V dc for 2N1890
and 2N1890S.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup
2 herein.
Subgroup
C2
C6
Method
2036
1026
Condition
Lead fatigue: Test condition E.
T
A
= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5).
T
J
= 150°C min; V
CB
= 24 V dc for 2N1711 and 2N1711S; V
CB
= 48 V dc for 2N1890 and
2N1890S.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table IX of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein.
Subgroup
E1
E1
E2
E3
E4
E5
Method
1051
1071
1038
----
3131
----
80 to 85 percent of rated V
CBO
, T
A
= 150°C, t = 1,000 hours
Not applicable.
See 4.5.2, 22 devices, c = 0.
Not applicable.
Condition
Condition C, 500 cycles; 22 devices, c = 0.
4.5 Method of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750.
5
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