Sirenza Microdevices’ SBF-4089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 0.5 GHz
with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
S -P aram e te rs v s F re q u e n c y +2 5 c
16
15.5
15
14.5
Gain(dB)
s 21
s 11
s 22
SBF-4089
SBF-4089Z
Pb
RoHS Compliant
&
Green
Package
DC-500 MHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
•
Available in Lead Free, RoHS compliant,
& Green packaging
• IP3 = 42dBm @ 240MHz
• Stable Gain Over Temperature
•
Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Low Thermal Resistance
0
-5
-10
-15
-20
-25
IRL,ORL(dB)
14
13.5
13
12.5
12
11.5
11
0
100
200
300
400
500
600
700
800
900
Fre q
Applications
• Receiver IF Amplifier
• Cellular, PCS, GSM, UMTS
• PA Driver Amp
• Wireless Data, Satellite Terminals
U nits
dB
Frequency
70MHz
240 MHz
500 MHz
70MHz
240 MHz
400 MHz
70MHz
240 MHz
400 MHz
500 MHz
500 MHz
500 MHz
4.5
82
Min.
13.3
13.2
Typ.
14.9
14.8
14.7
20.1
20.1
19.9
40.0
42.0
41.0
17.0
16.0
3.3
4.9
90
43
4.3
5.3
98
Max.
16.3
16.2
Symbol
G
Parameter
Small Si gnal Gai n
P
1dB
Output Power at 1dB C ompressi on
dB m
18.4
OIP
3
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Output Thi rd Order Intercept Poi nt
Input Return Loss
Output Return Loss
Noi se Fi gure
D evi ce Operati ng Voltage
D evi ce Operati ng C urrent
Thermal Resi stance (juncti on to lead)
V
S
= 8 V
R
BIAS
= 33 Ohms
I
D
= 90 mA Typ.
T
L
= 25ºC
dB m
dB
dB
dB
V
mA
°C /W
39.0
13.0
12.0
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms, App circuit page 4.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103412 Rev. C
Preliminary
SBF-4089 DC-500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Frequency (MHz)
Symbol
Parameter
Unit
70
100
240
400
500
850
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V= 8 V
V
SS
=8 V
R
BIAS
39 Ohms
R
BIAS
==33 Ohms
dB
dB m
dB m
dB
dB
dB
dB
14.9
40.0
20.1
18
15
18
3.2
14.9
40.5
20.1
22
16
18
3.3
14.9
42.5
20.1
22
17
18
3.3
14.8
41.0
19.9
21
19
18
3.3
14.7
40.0
20.1
21
21
18
3.3
14.3
35.1
18.1
19
18
18
3.3
Test Conditions:
Test Conditions:
I
80 mA Typ.
I
DD
==90 mA Typ.
= 25ºC
TT
L
= 25ºC
L
OIP Tone Spacing
MHz, Pout per tone 0 dBm
OIP
3 3
ToneSpacing ==11MHz, Pout per tone == 0 dBm
ZZ
S
=Z
LL
= 50 Ohms,
= Z = 50 Ohms
App circuit Page 4
S
Absolute Maximum Ratings
P1dB vs Temp
20.5
Output Power (dBm)
20
19.5
19
18.5
18
17.5
17
50
250
450
Frequency(MHz)
650
850
+25c
-40c
+85c
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Power
Max Operating Dissipated
Power
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
1
50
mA
6V
+19 dBm
0.8 W
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=T
LEAD
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
TOIP vs Temp
45
43
41
39
37
35
33
31
29
27
25
50
Noise Figure vs Temp
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
50
TOIP (dB)
NF (dB)
+25c
-40c
+85c
+25c
-40c
+85c
250
450
650
850
250
450
650
850
Frequency(MHz)
Frequency(MHz)
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103412 Rev. C
Preliminary
SBF-4089 DC-500 MHz Cascadable MMIC Amplifier
Test Conditions : Vs = 8v, R-bias = 33ohm, Id = 90mA, Temp = +25c
|S
11
| vs. Frequency
-10
+25c
|S
21
| vs. Frequency
15.1
-40c
+85c
-12
-14
-16
-18
-20
-22
-24
0
100
200
300
400
500
600
700
15
14.9
14.8
+25c
-40c
+85c
Gain (dB)
800
900
S11 (dB)
14.7
14.6
14.5
14.4
14.3
14.2
14.1
0
100
200
300
400
500
600
700
800
900
Frequency(MHz)
Frequency(MHz)
|S
12
| vs. Frequency
-16
-16.5
-17
+25c
-40c
+85c
|S
22
| vs. Frequency
-12
+25c
-14
-40c
+85c
Return Loss(dB)
0
100
200
300
400
500
600
700
800
900
S12(dB)
-17.5
-18
-18.5
-19
-19.5
-20
Frequency(MHz)
-16
-18
-20
-22
-24
0
100
200
300
400
500
600
700
800
900
Frequency(MHz)
Bias sweep vs Temp
100
90
80
+25c
-40c
+85c
Current (mA)
70
60
50
40
30
20
10
0
0
1
NOTE: Output Return Loss Can be
improved at low end of band with L1
selection, see Page 4 app circuit.
2
3
4
5
6
7
8
Source Voltage (V)
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-103412 Rev. C
Preliminary
SBF-4089 DC-500 MHz Cascadable MMIC Amplifier
Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
R eference
D esignator
Frequency (Mhz )
70
100
240
500
850
V
S
C
D
L
C
C
B
C
D
L
C
L1
1 uF
100pF
6.8 uH
6.8nH
1000 pF
100 pF
1.2 uH
6.8nH
1000 pF
100 pF
1.2 uH
6.8nH
220 pF
100pF
68 nH
6.8nH
100 pF
68pF
33nH
6.8nH
RF in
C
B
1
4
SBF-4089
3
6.8nH
RF out
L
1
C
B
Recommended Bias Resistor Values for I
D
=90mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
7.5 V
27
8V
33
10 V
56
12 V
75
2
Note: R
BIAS
provides DC bias stability over temperature.
Rbias
CD
Mounting Instructions
1. NOTE: For broadband RF unconditional stability do not
put GND vias under the exposed backside GND paddle.
2. Solder the copper pad on the backside of the
device package to the ground plane.
3. Use a large ground pad area with many plated
through-holes as shown.
4. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
NXP MCU
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