LH5164AV
FEATURES
•
8,192
×
8 bit organization
•
Access time: 200 ns (MAX.)
•
Supply current (MAX.):
Operating: 248 mW
55 mW (t
RC
, t
WC
= 1
µs)
Standby: 5.5
µW
Data retention:
0.6
µW
(V
CC
= 3 V, t
A
= 25°C)
•
Wide operating voltage range:
2.7 V to 5.5 V
•
Fully-static operation
•
TTL compatible I/O
•
Three-state outputs
•
Packages:
28-pin, 450-mil SOP
28-pin, 8
×
13 mm
2
TSOP (Type I)
DESCRIPTION
The LH5164AV is a static RAM organized as 8,192
×
8
bits. It is fabricated using silicon-gate CMOS process
technology.
OE
A
11
A
9
A
8
CE
2
WE
V
CC
NC
A
12
A
7
A
6
A
5
A
4
A
3
CMOS 64K (8K
×
8) Static RAM
PIN CONNECTIONS
28-PIN SOP
TOP VIEW
NC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
1
I/O
2
I/O
3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
8
A
9
A
11
OE
A
10
CE
1
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
5164AV-1
Figure 1. Pin Connections for SOP Package
28-PIN TSOP (Type I)
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
10
CE
1
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
GND
I/O
3
I/O
2
I/O
1
A
0
A
1
A
2
5164AV-2
Figure 2. Pin Connections for TSOP Package
1
LH5164AV
CMOS 64K (8K
×
8) Static RAM
A
9
24
A
8
25
A
12
2
A
7
3
A
6
4
A
5
5
A
4
6
A
3
7
ROW
SELECT
MEMORY
ARRAY
(256 x 256)
28 V
CC
14 GND
I/O
1
11
I/O
2
12
I/O
3
13
I/O
4
15
I/O
5
16
I/O
6
17
I/O
7
18
I/O
8
19
COLUMN I/O
CIRCUITS
INPUT
DATA
CONTROL
COLUMN SELECT
WE 27
OE 22
CE
2
26
CE
1
20
8
A
2
NOTE:
Pin numbers apply to the 28-pin SOP.
9
A
1
10
A
0
23
A
11
21
A
10
5164AV-3
Figure 3. LH5164AV Block Diagram
PIN DESCRIPTION
SIGNAL
PIN NAME
SIGNAL
PIN NAME
A
0
- A
12
CE
1
/CE
2
WE
OE
Address inputs
Chip Enable input
Write Enable input
Output Enable input
I/O
1
- I/O
8
V
CC
GND
NC
Data inputs and outputs
Power supply
Ground
No connection
2
CMOS 64K (8K
×
8) Static RAM
LH5164AV
TRUTH TABLE
CE
1
CE
2
WE
OE
MODE
I/O
1
- I/O
8
SUPPLY CURRENT
NOTE
H
X
L
L
L
NOTE:
1. X = H or L
X
L
H
H
H
X
X
L
H
H
X
X
X
L
H
Standby
Write
Read
Output disable
High-Z
Data input
Data output
High-Z
Standby (I
SB
)
Operating (I
CC
)
Operating (I
CC
)
Operating (I
CC
)
1
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Supply voltage
Input voltage
Operating temperature
Storage temperature
V
CC
V
IN
Topr
Tstg
–0.3 to +7.0
–0.3 to V
CC
+0.3
–10 to +70
–65 to +150
V
V
°C
°C
1
1, 2
NOTES:
1. The maximum applicable voltage on any pin with respect to GND.
2. V
IN
(MIN.) = –3.0 V for pulse width
≤50
ns.
RECOMMENDED OPERATING CONDITIONS (T
A
= –10°C to +70°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply voltage
Input voltage
(V
CC
= 2.7 V to 3.6 V)
Input voltage
(V
CC
= 4.5 V to 5.5 V)
V
CC
V
IH
V
IL
V
IH
V
IL
2.7
V
CC
– 0.5
–0.3
2.2
–0.3
5.5
V
CC
+ 0.3
0.2
V
CC
+ 0.3
0.8
V
V
V
V
V
1
1
NOTE:
1. V
IL
(MIN.) = –3.0 V for pulse width
≤50
ns.
3
LH5164AV
CMOS 64K (8K
×
8) Static RAM
DC CHARACTERISTICS
1
(T
A
= –10°C to +70°C, V
CC
= 2.7 V to 5.5 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Input leakage
current
Output leakage
current
I
LI
I
LO
V
IN
= 0 V to V
CC
CE
1
= V
IH
or CE
2
= V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= 0 to V
CC
CE
1
= 0.2 V, V
IN
= 0.2 V, or
V
CC
– 0.2 V
CE
2
= V
CC
– 0.2 V,
Outputs open,
V
CC
= 2.7 V to 3.6 V
CE
1
= V
IL
, V
IN
= V
IL
or V
IH
CE
2
= V
IH
, Outputs open,
V
CC
= 4.5 V to 5.5 V
CE
2
≤
0.2 V or
CE
1
≥
V
CC
– 0.2 V
t
CYCLE
=
200 ns
t
CYCLE
=
1.0
µs
t
CYCLE
=
200 ns
t
CYCLE
=
1.0
µs
V
CC
= 2.7 V
to 3.6 V
V
CC
= 4.5 V
to 5.5 V
–1.0
–1.0
1.0
1.0
20
8
µA
µA
Operating supply
current
I
CC
mA
45
10
0.6
µA
1.0
5
0.4
0.4
V
CC
–
0.5
2.4
V
mA
V
1
Standby current
I
SB
I
SB1
V
OL
Output voltage
V
OH
CE
1
= V
IH
or CE
2
= V
IL
I
OL
= 500
µA,
V
CC
= 2.7 V to 3.6 V
I
OL
= 2.1 mA, V
CC
= 4.5 V to 5.5 V
I
OH
= –500
µA,
V
CC
= 2.7 V to 3.6 V
I
OH
= –1.0 mA, V
CC
= 4.5 V to 5.5 V
NOTE:
1. CE
2
should be
≥
V
CC
– 0.2 V or
≤0.2
V when CE
1
≥
V
CC
– 0.2 V.
4
CMOS 64K (8K
×
8) Static RAM
LH5164AV
READ CYCLE (T
A
= –10°C to +70°C, V
CC
= 2.7 V to 5.5 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Read cycle time
Address access time
CE
1
access time
CE
2
access time
Output enable access time
Output hold time
CE
1
Low to output in Low-Z
CE
2
High to output in Low-Z
OE Low to output in Low-Z
CE
1
High to output in High-Z
CE
2
Low to output in High-Z
OE High to output in High-Z
t
RC
t
AA
t
ACE1
t
ACE2
t
OE
t
OH
t
LZ1
t
LZ2
t
OLZ
t
HZ1
t
HZ2
t
OHZ
200
200
200
200
150
10
20
20
10
0
0
0
60
60
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE (T
A
= –10°C to +70°C, V
CC
= 2.7 V to 5.5 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Write cycle time
CE Low to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Input data setup time
Input data hold time
WE High to output in Low-Z
WE Low to output in High-Z
OE High to output in High-Z
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
t
WZ
t
OHZ
200
180
180
0
150
0
100
0
20
0
0
60
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TEST CONDITIONS
PARAMETER
MODE
NOTE
Input pulse level
Input rise/fall time
Input/output timing level
Output load
0.2 V to V
CC
– 0.2 V
10 ns
1.5 V
C
L
(100 pF)
1
NOTE:
1. Includes scope and jig capacitance.
CAPACITANCE
1
(T
A
= 25°C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input capacitance
I/O capacitance
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
7
10
pF
pF
NOTE:
1. This parameter is sampled and not production tested.
5
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