The documentation and process conversion measures
necessary to comply with this document shall be
completed by 21 September, 2001.
INCH POUND
MIL-PRF-19500/182F
21 June 2001
SUPERSEDING
MIL-PRF-19500/182E
29 July 1999
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N720A, 2N720AUB, 2N1893, 2N1893S, JAN, JANTX, JANTXV,
JANHC2N720A and JANKC2N720A
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for NPN silicon, low-power transistors. Three levels
of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO-18), figure 2 (similar T0-5), figure 3 (UB package), and
figure 4 (JANHC, JANKC die layout).
1.3 Maximum ratings.
Type
P
T1
(1)
T
C
= +25°C
W
2N720A
2N720AUB
2N1893
2N1893S
1.8
1.16
3.0
3.0
P
T2
(2)
T
A
= +25°C
W
0.5
0.5
0.8
0.8
V dc
120
120
120
120
V dc
7
7
7
7
V dc
80
80
80
80
mA dc
500
500
500
500
V dc
100
100
100
100
°C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
C/W
325
325
175
175
V
CBO
V
EBO
V
CEO
I
C
V
CER
T
J
and T
STG
R
ja
(1) Derate linearly at 10.3 mW/°C for type 2N720A, 6.63 mW/°C for type 2N720AUB, and 17.2 mW/°C for type
2N1893 and 2N1893S for T
C
> +25°C.
(2) Derate linearly at 3.08 mW/°C for types 2N720A, 2N720AUB T
A
> +37.5°C and 5.7 mW/°C for types
2N1893 and 2N1893S for T
A
> +60°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
1.4 Primary electrical characteristics.
Limits
h
FE1
(1)
V
ce
= 10 V dc
I
C
= 0.1 mA dc
Min
Max
20
h
FE2
(1)
V
ce
= 10 V dc
I
C
= 10 mA dc
35
h
FE3
(1)
V
ce
= 10 V dc
I
C
= 150 mA dc
40
120
h
fe
f = 20 MHz
V
ce
= 10 V dc
I
C
= 50 mA dc
3.0
10
V
CE(SAT)
I
C
= 50 mA dc
I
B
= 5.0 mA dc
V dc
1.2
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part
of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those
listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement
thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3. Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
MIL-PRF-19500/182F
Symbol
Inches
Min
Max
.195
2.10
.230
Millimeters
Min
4.52
4.31
5.31
Max
4.95
5.33
5.84
Notes
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
r
α
.178
1.70
.209
.100 TP
.016
.500
.016
.021
.750
.019
.050
.250
.028
.036
.048
.046
.010
45° TP
2.54 TP
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
0.71
.91
1.22
1.17
.025
45° TP
4
5, 6
5, 6
5, 6
5, 6
5, 6
2, 3
2
8
4
NOTES:
1. Dimensions are in inches. Metric equivalents are
given for general information only.
2. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
3. Dimension TL measured from maximum HD.
4. Leads at gauge plane .054 +.001 -.001 inch (1.37 +0.03 –0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in
MIL-HDBK-6100.
5. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
6. All 3 leads.
7. The collector shall be electrically connected to the case.
8. Dimension r (radius) applies to both inside corners of tab.
9. In accordance with ANSI Y14.5M, diameters are equivalent to
Φx
symbology.
10. Lead number 1 = emitter; lead number 2 = base; lead number 3 = collector.
FIGURE 1. Physical dimensions for device type 2N720A (TO-18).
3
MIL-PRF-19500/182F
Symbol
Dimensions
Inches
Millimeter
Min
Max
Min
Max
.240
.260
6.10
6.60
.200 TP
5.08 TP
.016
.021
0.41
0.53
See notes
.016
.250
.355
.305
.009
.100
.019
.050
.370
.335
.041
0.41
6.35
8.51
7.75
0.23
2.54
0.48
1.27
9.40
8.51
1.04
Notes
CH
LC
LD
LL
LU
L
1
L
2
HD
CD
h
P
Q
r
TL
TW
α
6
7, 8
7, 8, 11,
12
7, 8
7, 8
7, 8
.050
.010
.029
.045
.028
.034
45° TP
1.27
0.25
0.74
1.14
0.71
0.86
45° TP
5
4
10
3
2
6
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab
at MMC. The device may be measured by direct methods or by the gauge and gauging procedure described
on gauge drawing on figure 2.
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. For transistor types 2N1893, dimension LL shall be 1.500 inch (38.1 mm) minimum.
12. For transistor types 2N1893S, dimension LL is .5 inches (12.7 mm) minimum, and .75 inches (19.00 mm)
maximum.
13. In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
14. Lead number 1 = emitter; lead number 2 = base; lead number 3 = collector.
FIGURE 2. Physical dimensions for device types 2N1893, 2N1893S (TO -5).
4
MIL-PRF-19500/182F
Symbol
A
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
0.046
0.056
0.97
1.42
0.017
0.035
0.43
0.89
0.016
0.024
0.41
0.61
0.016
0.024
0.41
0.61
0.016
0.024
0.41
0.61
0.085
0.108
2.41
2.74
0.071
0.079
1.81
2.01
0.035
0.039
0.89
0.99
0.085
0.108
2.41
2.74
0.115
0.128
2.82
3.25
0.128
3.25
0.022
0.038
0.56
0.96
0.022
0.038
0.56
0.96
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 3. Physical dimensions, surface mount (2N720AUB).
5
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