LH6V4256
FUNCTION
•
262,144 words
×
4 bit
•
Access time: 100 ns (MAX)
•
Cycle time: 190 ns (MIN)
•
Fast page mode cycle time: 60 ns (MIN)
•
Power supply: +3.3 V
±0.3
V
•
Power consumption (MAX):
Operating: 126 mW
Standby: 0.54 mW
•
Built-in latch circuit for row-address,
column-address, and input data
•
OE = Don’t care in early write operation
•
RAS only refresh, hidden refresh, and
CAS before RAS refresh capability
•
On-chip refresh counter
•
512 refresh cycle/8 ms
•
Packages:
20-pin, 300-mil DIP
26-pin, 300-mil SOJ
28-pin, 8
×
13 mm
2
TSOP (Type I)
CMOS 1M (256K
×
4) Dynamic RAM
DESCRIPTION
The LH6V4256 is a 262,144 word
×
4-bit dynamic
RAM which allows fast page mode access. The
LH6V4256 is fabricated on SHARP’s advanced CMOS
double-level polysilicon gate technology. With its input
multiplexed and packaged in the standard 20-pin DIP,
26-pin SOJ, or 28-pin TSOP (I) packages, it is easy to
realize memory systems with low power dissipation and
large memory capacity. The LH6V4256 operates on a
single +3.3 V power supply and the built-in biasing
voltage generator circuit.
PIN CONNECTIONS
20-PIN DIP
I/O
1
I/O
2
WE
RAS
NC
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
SS
I/O
4
I/O
3
CAS
OE
A
8
A
7
A
6
A
5
A
4
6V4256-1
TOP VIEW
Figure 1. Pin Connections for DIP Package
2-14
LH6V4256
CMOS 1M (256K
×
4) Dynamic RAM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
NOTE
Applied voltage on all pins
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
NOTE:
– 0.5 to +5.5
50
1.0
0 to +70
– 65 to +150
V
mA
W
°C
°C
1
1. The maximum applicable voltage on any pin with respect to V
SS
.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
Input voltage
V
CC
V
SS
V
IH
V
IL
3.0
0
2. 3
– 0.3
3.3
0
3.6
0
V
CC
+ 0.3
0.6
V
V
V
V
CAPACITANCE (T
A
= 0 to +70°C, f = 1 MHz, V
CC
= 3.3 V
±0.3
V)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
Input/output capacitance
A
0
– A
8
RAS, OE, CAS, WE
I/O
1
– I/O
4
C
IN1
C
IN2
C
OUT1
6
7
7
pF
pF
pF
DC ELECTRICAL CHARACTERISTICS (T
A
= 0 to +70°C, V
CC
= 3.3 V
±0.3
V)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
NOTE
Average supply current in normal operation
Supply current in
standby mode
RAS = CAS
≥
V
CC
– 0.2 V
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
LI
I
LO
V
OH
V
OL
–10
–10
2.15
35
0.15
30
35
35
10
10
mA
mA
mA
mA
mA
µA
µA
V
1, 2, 3
1
1, 2
1, 2, 3
1, 2, 3
Average supply current in fast page mode
Average supply current in CAS before RAS refresh cycle
Average supply current in RAS only refresh cycle
Input leakage current
Output leakage current
Output ‘High’ Voltage
Output ‘Low’ Voltage
NOTES:
0 V
≤
V
IN
≤
4.8 V
0 V except on test pins
0 V
≤
V
OUT
≤
4.8 V
Output in high-impedance state
I
OUT
= – 2 0 0
µA
I
OUT
= 1 mA
0.4
V
1. Specified values are with outputs open.
2. I
CC1
, I
CC3
, I
CC4
, and I
CC5
depend on cycle time.
3. Cycle time is 190 ns. Address transition is once at RAS = V
IH
and once at RAS = V
IL
.
2-18
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