P
RODUCT
S
PECIFICATIONS
®
Integrated Circuits Group
LH28F800BVHE-BTL90
Flash Memory
8M (1M ×8/512K x 16)
(Model No.: LHF80V13)
Spec No.: EL109049A
Issue Date: December 1, 1998
SHARP
LHFSOV13
l Handle this document carefully for it contains material protected by international copyright law.
Any reproduction, full or in part, of this material is prohibited without the express written
permission of the company.
l When using the products covered herein, please observe the conditions written herein and the
precautions outlined in the following paragraphs. In no event shall the company be liable for any
damages resulting from failure to strictly adhere to these conditions and precautions.
(1) The products covered herein are designed and manufactured for the following application
areas. When using the products covered herein for the equipment listed in Paragraph (2),
even for the following application areas, be sure to observe the precautions given in
Paragraph (2). Never use the products for the equipment listed in Paragraph (3).
*Office electronics
*Instrumentation and measuring equipment
*Machine tools
*Audiovisual equipment
*Home appliance
l Communication equipment other than for trunk lines
(2) Those contemplating using the products covered herein for the following equipment which
demands high reliabilitv, should first contact a sales representative of the company and then
accept responsibility for incorporating into the design fail-safe operation, redundancy, and
other appropriate measures for ensuring reliability and safety of the equipment and the
overall system.
*Control and safety devices for airplanes, trains, automobiles,
transportation equipment
*Mainframe computers
@Traffic control systems
@Gas
leak detectors and automatic cutoff devices
*Rescue and security equipment
*Other safety devices and safety equipment, etc.
and other
(3) Do not use the products covered herein for the following equipment which demands
extremelv high performance in terms of functionality, reliability, or accuracy.
*Aerospace equipment
l Communications equipment for trunk lines
*Control equipment for the nuclear power industry
l Medical equipment related to life support, etc.
(4) Please direct all queries and comments regarding the interpretation of the above three
Paragraphs to a sales representative of the company.
aPlease direct all queries regarding the products covered herein to a sales representative of the
company.
Rev. 1.01
SHARP
LHF8OVl3
1
CONTENTS
PAGE
1 INTRODUCTION..
............................................................ 3
3
5 DESIGN CONSIDERATIONS
PAGE
...................................... 20
1.1 Features ........................................................................
5.1 Three-Line Output Control ....................................... 20
5.2 RY/BY# and Block Erase and Word/Byte Write
Polling.. ....................................................................
20
5.3 Power Supply Decoupling ........................................ 20
5.4 V,, Trace on Printed Circuit Boards ........................ 20
5.5 V,,,
V,,
RP##Transitions.. ..................................... 21
Protection.. .................................... 21
5.6 Power-Up/Down
1.2 Product Overview. ........................................................ 3
2 PRINCIPLES
OF OPERATION.. ..................................... .7
2.1 Data Protection.. ........................................................... 8
3,BUS OPERATION
........................................................... .8
8
8
3.1 Read ..............................................................................
3.3 Standby.. .......................................................................
3.4 Deep Power-Down
5.7 Power Dissipation ..................................................... 21
6 ELECTRICAL
SPECIFICATIONS
............................... 22
3.2 Output Disable.. ............................................................ 8
...................................................... .8
9
6.1 Absolute Maximum Ratings ..................................... 22
6.2 Operating Conditions ................................................ 22
6.2.1 Capacitance ......................................................... 22
6.2.2 AC Input/Output Test Conditions ....................... 23
4 COMMAXD
DEFINITIONS..
.......................................... .9
6.2.3 DC Characteristics .............................................. 24
6.2.4 AC Characteristics - Read-Only Operations.. ..... 26
6.2.5 AC Characteristics - Write Operations ............... 29
6.2.6 Alternative CE#-Controlled Writes.. ................... 3 1
6.2.7 Reset Operations ................................................. 33
6.2.8 Block Erase and Word/Byte Write Performance 34
7 PACKAGE AND PACKING
SPECIFICATIONS..
...... .35
4.1 Read Array Command ................................................ 12
4.2 Read Identifier Codes Command ............................... 12
4.3 Read Status Register Command.. ............................... 12
4.4 Clear Status Register Command.. ............................... 12
4.5 Block Erase Command. .............................................. 12
4.6 Word/Byte Write Command.. ..................................... 13
4.7 Block Erase Suspend Command ................................ 13
4.8 Word/Byte Write Suspend Command.. ...................... 14
4.9 Considerations of Suspend ......................................... 14
4.10 Block Locking .......................................................... 14
4.10.1 V,,=V,,
4.10.3 WP#=V,,
for Complete Protection.. .................... 14
for Block Unlocking.. ........................ 14
4.10.2 WP#=V,, for Block Locking.. ............................ 14
3.5 Read Identifier Codes Operation.. ............................... .9
3.6 Write .............................................................................
Rev. 1.0
SHARP
LHF8OV13
2
LH28F8OOBVHE-BTL90
8M-BIT (1Mbit x 8 / 512Kbit x 16)
Smart3 Flash MEMORY
n Smart3 Technology
- 2.7V-3.6V Vcc
- 2.7V-3.6V or 11.4V-12.6V Vpp
n User-Configurable
x8 or x 16 Operation
n Enhanced Data Protection Features
- Absolute Protection with Vpp=GND
- Block Erase and Word/Byte Write Lockout
during Power Transitions
- Boot Blocks Protection with WP#=VIL
n Automated Word/Byte Write and Block Erase
- Command User Interface
- Status Register
n Low Power Management
- Deep Power-Down Mode
- Automatic Power Savings Mode Decreases
ICC in Static Mode
n SRAM-Compatible Write Interface
n Industry-Standard Packaging
- 48-Lead TSOP
n ETOXTM” Nonvolatile Flash Technology
n CMOS Process (P-type silicon substrate)
w Not designed or rated as radiation hardened
n High-Performance Access Time
- 90ns(2.7V-3.6V)
n Operating Temperature
- -40°C to +85”C
n Optimized Array Blocking Architecture
- Two 4k-word Boot Blocks
- Six 4k-word Parameter Blocks
- Fifteen 32k-word Main Blocks
- Bottom Boot Location
n Extended Cycling Capability
- 100,000 Block Erase Cycles
n Enhanced Automated Suspend Options
- Word/Byte Write Suspend to Read
- Block Erase Suspend to Word/Byte Write
- Block Erase Suspend to Read
SHARP’s LH28F800BVHE-BTL90
Flash memory with Smart3 technology is a high-density, low-cost, nonvolatile, read/write
storage solution for a wide range of applications. LH28F800BVHE-BTL90
can operate at V,,=2.7V-3.6V
and
V,=2.7V-3.6V.
Its low voltage operation capability realize battery life and suits for cellular phone application.
[ts Boot, Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
directly executed out of flash or downloaded to DRAM, the LH28F800BVHE-BTL90
offers two levels of protection: absolute
protection with V,, at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
code security needs.
Ihe LH28F800BVHE-BTL90
is manufactured on SHARP’s 0.35pm ETOXTM* process technology. It come in industry-
standard package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
Rev. 1.01
SHARP
LHF8OV13
3
1 INTRODUCTION
This datasheet contains LH28F8OOBVHE-BTL90
specifications. Section 1 provides a flash memory
overview. Sections 2,3,4 and 5 describe the memory
organization and functionality. Section 6 covers electrical
specifications.
eliminates the need for a separate 12V converter, while
V,=l2V
maximizes block erase and word/byte wriu
performance. In addition to flexible erase and prograrr
voltages, the dedicated V,, pin gives complete datr
protection when V,, 5 VPPLK.
Table 1. V,, and V,, Voltage Combinations Offered by
Smart3 Technology
V,, Voltage
V,, Voltage
2.7V-3.6V, 11.4V- 12.6V
~
2.7V-3.6V
Internal V,, and V, detection Circuitry automatically
configures the device for optimized read and write
operations.
A Command User Interface (CUI) serves as the interface
between the system processor and internal operation of the
device. A valid command sequence written to the CUI
initiates device automation. An internal Write State
Machine (WSM) automatically executes the algorithms
and timings necessary for block erase and word/byte write
operations.
A block erase operation erases one of the device’s 32K-
word blocks typically within 0.51s (2.7V-3.6V V,,,
11.4V-12.6V V,,), 4K-word blocks typically within 0.3 1s
(2.7V-3.6V V,,, 11.4V- 12.6V V,,) independent of other
blocks. Each block can be independently erased 100,000
times. Block erase suspend mode allows system software
to suspend block erase to read or write data from any other
block.
Writing memory data is performed in word/byte
increments of the device’s 32K-word blocks typically
within 12.6~s (2.7V-3.6V V,,, 11.4V-12.6V V,,), 4K-
word blocks typically within 24.5us (2.7V-3.6V V,,,
11.4V-12.6V V,,).
Word/byte write suspend mode
enables the system to read data or execute code from any
other flash memory array location.
1.1 Features
Key enhancements of LH28F800BVHE-BTL90
Flash memory are:
*Smart3 Technology
*Enhanced Suspend Capabilities
*Boot Block Architecture
Please note following important differences:
Smart3
l
VPPLK has been lowered
to 1.5V to support 2.7V-3.6V
block erase and word/byte write operations. The V,
voltage transitions to GND is recommended for
designs that switch V,, off during read operation.
*To take advantage of Smart3 technology, allow V,,
and V,,, connection to 2.7V-3.6V.
1.2 Product
Overview
The LH28F800BVHE-BTL90
is a high-performance 8-
Mbit Smart3 Flash memory organized as lM-byte of 8
bits or 512K-word of 16 bits. The lM-byte/512K-word
of
data is arranged in two 8K-byte/4K-word boot blocks, six
8K-byte/4K-word
parameter blocks and fifteen 64K-
byte/32K-word
main blocks which are individually
erasable in-system. The memory map is shown in Figure
3.
Smart3 technology provides a choice of V,, and V,,
combinations, as shown in Table 1, to meet system
performance
and
power expectations. V, at 2.7V-3.6V
Rev. 1.1
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