This is an advance copy of the dated document. The final
document after review by the Defense Automated
Printing Service may be slightly different in format. Actual
technical content will be the same.
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 29 September 1999
INCH-POUND
MIL-PRF-19500/374D
29 June 1999
SUPERSEDING
MIL-S-19500/374C
01 May 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N3996 THROUGH 2N3999,
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power
switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for the unencapsulated die.
1.2 Physical dimensions. See 3.3 and figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N3998 and 2N3999,
3 lead stud package), figure 3, and figure 4 (JANHC and JANKC).
1.3 Maximum ratings.
PT 1/
TA = +25
°
C
W
2
PT 2/
TC = +100
°
C
W
30
VEBO
VCBO
VCEO
IB
IC
IC 3/
TSTG and TJ
R
Θ
JC
V dc
8
V dc
100
V dc
80
A dc
0.5
A dc
5.0
A dc
10
°
C
-65 to +200
°
C/W
3.33
1/ Derate linearly, 11.4 mW/
°
C for TA
≥
+25
°
C.
2/ Derate linearly, 300 mW/
°
C for TC
≥
+100
°
C.
3/ This value applies for tp
≤
1 ms, duty cycle
≤
50%.
1.4 Primary electrical characteristics at TC = +25
°
C.
Limit
hFE2 1/
VCE = 2 V dc;
IC = 1 A dc
2N3996
2N3998
Minimum
40
Maximum
120
1/ Pulsed (see 4.5.1).
2N3997
2N3999
80
240
3
12
V dc
---
1.6
V dc
---
2.0
pF
---
150
|hfe|
VCE = 5 V dc;
IC = 1 A dc;
f = 10 MHz
VBE (sat) 2 1/
IC = 5 A dc;
IB = 500 mA dc
VCE (sat) 2 1/
IC = 5 A dc;
IB = 500 mA dc
Cobo
VCB = 10 V dc
IE = 0
100 kHz
≤
f
≤
1 MHz
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/374D
FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997.
2
MIL-PRF-19500/374D
Dimensions
Symbol
CH
A1
CD
CD1
HF
PS
PS1
HT
OAH
UD
SL
SU
φ
T
φ
T1
SD
Z
Z1
.040
.040
Inches
Min
.345
.318
.370
.424
.180
.080
.090
.575
.155
.400
Max
.400
.250
.380
.437
.437
.215
.110
.140
.675
.189
.455
.078
.065
.065
.002
.006
1.02
1.02
8.08
9.40
10.77
4.57
2.03
2.29
14.61
3.94
10.16
Millimeters
Min
8.76
Max
10.16
6.35
9.65
11.10
11.10
5.46
2.79
3.56
17.15
4.80
11.56
1.98
1.65
1.65
0.05
0.15
4
8
7
5
5
2,6
1
3
3
Notes
.190-32 UNF-2A
NOTES:
1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case.
2. Chamfer or undercut on one or both ends of hexagonal portion is optional.
3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1.
4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab
terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically
connected to the case. The other three terminals shall be electrically isolated from the case.
5. Angular orientation of terminals with respect to hexagon is optional.
6. HT dimension does not include sealing flanges.
7. SU is the length of incomplete or undercut threads.
8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook
H28, part I.
9. Dimensions are in inches.
10. Metric equivalents are giving for general information only and are based upon 1.00 inch = 25.4 mm.
11. In accordance with ANSI Y14.5M, diameters are equivalent to
φ
x symbology.
FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued.
3
MIL-PRF-19500/374D
FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999.
4
MIL-PRF-19500/374D
Dimensions
Symbol
Inches
Min
CH
A1
CD1
CD
HF
PS
PS1
PS2
PS3
HT
OAH
UD
SL
SU
φ
T
φ
T1
SD
.040
.040
.345
.318
.370
.424
.125
.110
.090
.185
.090
.575
.155
.400
Max
.400
.250
.380
.437
.437
.165
.145
.140
.215
.140
.675
.189
.455
.078
.065
.065
1.02
1.02
8.08
9.40
10.77
3.18
2.79
2.29
4.70
2.29
14.61
3.94
10.16
Millimeters
Min
8.76
Max
10.16
6.35
9.65
11.10
11.10
4.19
3.68
3.56
5.46
3.56
17.15
4.80
11.56
1.98
1.65
1.65
3
9
5
4,7,8
4,7
4,7,8
4,7,8
Notes
.190-32 UNF-2A
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Metric equivalents are given for general information only and are based upon 1.00 inch = 25.4 mm.
Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90
°
option
is used.
SD is the pitch diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part
I.
The orientation of the terminals in relation to the hex flats is not controlled.
All three terminals.
The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud.
Terminal spacing measured at the base seat only.
Dimensions PS, PS1, PS2, and PS3 are measured from the centerline of terminals.
Maximum unthreaded dimension.
This dimension applies to the location of the center line of the terminals.
A 90
°
angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic outline
except PS, PS1, and the 120
°
lead angle apply to this option.
Terminal 1, emitter; terminal 2, base; terminal 3, collector.
A slight chamfer or undercut on one or both ends of the hexagonal is optional.
In accordance with ANSI Y14.5M, diameters are equivalent to
φ
x symbology.
FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 - Continued.
5
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