The documentation and process conversion measures
necessary to comply with this document shall be
completed by 18 March 2005.
INCH-POUND
MIL-PRF-19500/270J
18 December 2004
SUPERSEDING
MIL-PRF-19500/270H
24 July 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN,
SILICON, TYPES 2N2060 AND 2N2060L,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN,
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-77 or TO-99).
1.3 Maximum ratings unless otherwise specified T
A
= +25°C.
P
T1
T
A
= +25°C
One
section
(1)
mW
540
Both
sections
(2)
mW
600
P
T2
T
C
= +25°C
One
section
(1)
W
1.5
Both
sections
(2)
W
2.12
mA dc
500
V dc
100
V dc
60
V dc
7
°C
-65 to +200
I
C
V
CBO
V
CEO
V
EBO
T
STG
and T
J
(1) For T
A
> +25°C, derate linearly 3.08 mW/°C one section, 3.48 mW/°C both sections.
(2) For T
C
> +25°C, derate linearly 8.6 mW/°C one section, 12.1 mW/°C both sections.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/270J
*
1.4 Primary electrical characteristics.
h
FE1
Limit
V
CE
= 5 V dc
I
C
= 10
µA
dc
V
CE
= 5 V dc
I
C
= 100
µA
dc
V
CE
= 5 V dc V
CE
= 5 V dc V
CE
= 10 V dc I
C
= 50 mA dc
I
C
= 1 mA dc
I
C
= 10 mA
dc
I
C
= 50 mA dc
f = 20 MHz
V dc
Min
Max
25
75
30
90
40
120
50
150
3
25
0.3
V dc
0.9
I
B
= 5 mA dc
I
C
= 50 mA dc
I
B
= 5 mA dc
h
FE2
h
FE3
h
FE4
(1)
| h
fe
|
V
CE(sat)
V
BE(sat)
(1) Pulsed (see 4.5.1).
1.5 Primary electrical matching characteristics of each individual section.
|∆( V
BE1
- V
BE2
)
∆
T
A
|1
|∆(V
BE1
- V
BE2
)
∆
T
A
|2
| V
BE1
- V
BE2
|
h
FE
2
−
1
h
FE
2
−
2
Limit
(1)
V
CE
= 5 V dc;
I
C
= 100
µA
dc
1/
V
CE
= 5 V dc;
I
C
= 100
µA
dc
V
CE
= 5 V dc;
I
C
= 100
µA
dc
T
A
= +25°C and -55°C
mV dc
V
CE
= 5 V dc;
I
C
= 100
µA
dc
T
A
= +125°C and +25°C
mV
mV dc
Min
Max
0.9
1.0
5
0.8
1.0
(1) The larger number will be placed in the denominator.
2
MIL-PRF-19500/270J
Dimensions
Symbol
Inches
Min
Max
.370
.335
.260
Millimeters
Min
8.51
7.75
3.81
Max
9.40
8.51
6.60
Notes
CD
CD
1
CH
LC
LC
1
LD
LL
LL
1
LL
2
LU
P
Q
TL
TW
.335
.305
.150
.200 TP
.140
.016
.160
.021
5.08 TP
3.56
0.41
4.06
0.53
9
10
See notes 10, 12, and 13
.050
.250
.016
.100
.050
.029
.028
.045
.034
0.74
0.71
.019
6.35
0.41
2.54
1.27
1.14
0.86
0.48
1.27
10
10
10
8
7
5, 6
4, 5
NOTES:
h
.009
.041
0.23
1.04
1. Dimensions are in inches.
2. Millimeters are given for general information only.
r
.010
0.25
11
3. Refer to rules for dimensioning semiconductor product
outlines included in Publication No. 95.
9
45°TP
45°TP
α
4. Lead number 4 and 8 omitted on this variation.
5. Beyond r, TW must be held to a minimum length of .021 inch (.53 mm).
6. TL measured from maximum CD.
7. Details of outline in this zone optional.
8. CD
1
shall not vary more than .010 inch (.25 mm) in zone P. This zone is controlled for automatic handling.
9. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (.18
mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The
device may be measured by direct methods or by the gauge and gauging procedure described on gauge
drawing GS-1.
10. LU applies between LL
1
and LL
2
LD applies between LL
2
and LL minimum. Diameter is uncontrolled in LL
1
and beyond minimum.
11. r (radius) applies to both inside corners of tab.
12. For transistor types 2N2060, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum.
13. For transistor types 2N2060L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum.
14. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1. Physical dimensions.
3
MIL-PRF-19500/270J
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
h
FE
−
1
...................................... Static forward-current-gain-ratio. The matching ratio of the static forward-current
h
FE
−
2
transfer ratios of each section.
|V
BE1
- V
BE2
| ............................. Absolute value of base-emitter-voltage differential between the individual sections.
|∆(V
BE1
- V
BE2
)
∆
T
A
| ............... Absolute value of the algebraic difference between the base-emitter-voltage
differentials between the individual sections at two different temperatures.
4
MIL-PRF-19500/270J
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, 1.5, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
5
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