MAPR-002729-170M00
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Rev. V1
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
J
Rating
65
3.0
27
500
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Frequency
Symbol
BV
CES
I
CES
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
R
TH(JC)
P
OUT
G
P
Min
65
-
-
170
8.5
40
-
-
-
Max
-
10
0.35
-
-
-
-10
2:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
Collector-Emitter Breakdown Voltage I
C
= 250mA
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
V
CE
= 40V
Vcc = 36V, Pin = 24W
Vcc = 36V, Pin = 24W
Vcc = 36V, Pin = 24W
Vcc = 36V, Pin = 24W
Vcc = 36V, Pin = 24W
Vcc = 36V, Pin = 24W
Vcc = 36V, Pin = 24W
C
RL
VSWR-T
VSWR-S
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
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for additional data sheets and product information.
For further information and support please visit:
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MAPR-002729-170M00
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V1
Typical RF Performance
Freq.
(GHz)
2.7
2.8
2.9
Pin
(W)
24
24
24
Pout
(W)
224
217
196
Gain
(dB)
9.69
9.56
9.11
Ic
(A)
12.1
11.3
10.3
Eff
(%)
51.4
53.4
53.0
RL
(dB)
-15.6
-14.7
-10.6
VSWR-S
(1.5:1)
S
S
S
VSWR-T
(2:1)
P
P
P
Gain vs. Frequency
10.0
Collector Efficiency vs. Frequency
55
9.0
8.5
8.0
2.70
Efficiency (%)
2.75
2.80
Freq (GHz)
2.85
2.90
Gain (dB)
9.5
50
45
40
35
2.70
2.75
2.80
Freq (GHz)
2.85
2.90
RF Test Fixture Impedance
F (GHz)
2.7
2.8
2.9
Z
IF
(Ω)
5.1 - j5.1
5.2 - j4.7
5.3 - j4.3
Z
OF
(Ω)
1.8 - j2.1
1.8 - j1.8
1.8 - j1.4
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPR-002729-170M00
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Test Fixture Circuit Dimensions
Rev. V1
Test Fixture Assembly
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAPR-002729-170M00
Radar Pulsed Power Transistor
170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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