Schottky Detector Diodes
Schottky Detector Diodes
Rev. V3
Features
•
Wide Selection of Packages for Stripline, Coax-
ial, and Waveguide Detectors
•
Chip Diodes Available
•
Both P and N Type Diodes
•
Excellent Sensitivity Through Ka-Band
•
Low 1/F Noise
Case Styles
(See appendix for complete dimensions)
Description
This family of low capacitance Schottky diodes is
designed to give superior performance in video
detectors and power monitors from 100 MHz
through 40 GHz. They have low junction capaci-
tance and repeatable video impedance. These
diodes are available in a wide range of ceramic,
stripline and axial lead packages and as bondable
chips. Both P and N type diodes are offered.
Applications
Detectors and power monitors in stripline, coaxial
and waveguide circuits through 40 GHz.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Schottky Detector Diodes
Schottky Detector Diodes
Rev. V3
Maximum Ratings
Temperature Ratings
Storage Operating Temperature
-65°C to +150°C
(Case Styles 54, 119, 120, 135, 135A, 186, 276)
-65°C to +125°C (Case Styles 137, 213)
S-X Band 1 Watt - 1 microsecond maximum pulse length
Ku-K Band 0.5 W - 1 microsecond maximum pulse length
S-X Band 150 mW (maximum)
Ku-K Band 100 mW (maximum)
230°C for 5 seconds, 1 mm from package
200°C for 5 seconds
150°C for 5 seconds, 1 mm from package
Power Ratings @ 25°C
Maximum Peak Incident RF Power
Maximum CW RF Power
Derate Linearity to Zero at 150°C
Solder Temperature
For case styles 54, 119, 186, 276
For case style 120
For case styles 137 and 213
Packaged N Type Silicon Schottky
Detector Diodes
These low barrier packaged detector diodes are
suitable for use in stripline, waveguide, and coaxial
detectors. They feature high sensitivity and low l/f
noise. These diodes are listed by increasing test
frequency, grouped by packages style and de-
creasing Tss. Other case styles than those speci-
fied may be available.
Specifications @ T
A
= +25°C
Model Number
1
Case Style
Test Frequency (GHz)
Maximum
2,3
Tang.
Signal Sensitivity T
SS
(dBm)
-55
-55
-55
-55
-55
-52
-52
-49
Video Impedance
3,4
Range
Min./Max.
(k Ohms)
1/2
1/2
1/2
1/2
1/2
1/2
1/2
1/2
MA40053
MA40064
MA40202
MA40201
MA40207
MA40205
MA40215
MA40268
54
119
54
119
120
119
120
120
3
3
10
10
10
16
16
36
Notes:
1. Schottky barrier junction diodes are thermocompression bonded in case style 119 and 120. Case style 54 uses pressure contacts. The
standard case style is given for each model number. Other case styles may be available.
2. The video amplifier bandwidth is 1 MHz and the nominal amplifier noise figure is 3 dB. DC Impedance is 10 k ohms. The DC bias is 20
µA.
3. RF Power = 30 dBm. The DC forward bias is +20 µA.
4. Measured at the indicated test frequency and at -30 dBm RF power.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Schottky Detector Diodes
Schottky Detector Diodes
Rev. V3
N Type Silicon Schottky Detector Diodes
These low barrier packaged detector diodes are
suitable got use in striping applications. They fea-
ture high sensitivity, and low l/f noise. These diodes
are listed by increasing frequency, and grouped by
package style and T
SS.
Case styles other than those
specified may be available. For additional informa-
tion, contact the factory.
Test Frequency
(GHz)
3
3
10
10
10
10
10
16
Model Number
Case Style
Minimum
1
Tang.
Signal Sensitivity T
SS
(dBm)
-55
-50
-52
-50
-55
-55
-55
-52
Video Impedance
2
Range
Min./Max.
(K Ohms)
1/2
1/2
1/2
1/2
1/2
1/2
1/2
1/2
MA40261
MA40143
MA40108
MA40070
MA40264
MA40147
MA40207-276
MA40215-276
186
213
137
137
186
213
276
276
Packaged P Type Silicon Schottky
Detector Diodes
This series of low barrier P type detector diodes
has good voltage sensitivity and low l/f noise than
similar capacitance N type Schottky diodes. They
are listed by case style.
Specifications @ T
A
= +25°C
Model Number
Case Style
Minimum Tang.
Test Frequency
Signal Sensitivity T
SS
(GHz)
(dBm)
10
10
10
10
-55
-55
-55
-55
1
Video Impedance
2
Range
Min./Max.
(Ohms)
1.2/1.8
1.2/1.8
1.2/1.8
1.2/1.8
Minimum
2
Sensitivity
(mV/mW)
5000
5000
5000
5000
MA40252
MA40251
MA40257
MA40257-276
54
119
120
276
Notes:
1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. The Input Impedance is 10 k Ohms and DC Bias is 20 µA.
2. Pinc = -30 dBm. The DC forward bias is +20 µA.
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Schottky Detector Diodes
Schottky Detector Diodes
Rev. V3
N Type Silicon Schottky Chip
Detector Diodes
These low barrier N type chip detector diodes are
suitable for use in microstrip applications. They
feature sensitivity, and low l/f noise. These diodes
are listed by increasing frequency.
Model
Number
MA40220
MA40222
Case
Style
135
135
Test
Frequency
(GHz)
10.0
16.0
Nominal
1,5
T
SS
(dBm)
-52
-52
Minimum Reverse
Voltage V
R
(Volts)
2.0
2.0
Nominal
3
Forward Voltage
(Volts)
0.3
0.3
Nominal
4
Total
Capacitance
(pF)
0.12
0.09
P Type Silicon Schottky Chip
Detector Diodes
These low barrier P type chip detector diodes are
suitable for use in microstrip or stripline circuits.
These diodes are listed by increasing test fre-
quency.
Model
Number
MA40270
MA40272
Case
Style
135A
135A
Test
Frequency
(GHz)
10.0
16.0
Nominal
1,5
T
SS
(dBm)
-52
-52
Minimum Reverse
Voltage V
R
(Volts)
4.0
4.0
Nominal
3
Forward Voltage
(Volts)
0.4
0.4
Nominal
4
Total
Capacitance
(pF)
0.12
0.09
Notes:
1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC Bias is +20 µA. Wafers are evalu-
ated on a sample basis for T
SS
.
2. Voltage rating is measured at 10 µA reverse bias current.
3. Forward voltage is measured at a forward current of 1 mA.
4. Capacitance is measured at 0 V and 1 MHz.
5. RF power = -30 dBm. The DC forward bias is +20 µA. Measured at the indicated test frequency and at -30 dBm RF power with R
L
= 10 k
Ohms and DC forward bias +20 µA
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Schottky Detector Diodes
Schottky Detector Diodes
Rev. V3
Typical Performance Curves
Nominal Output Voltage at X-Band (With Forward Bias)
Nominal Output Voltage at X-Band (With Zero Bias)
Nominal Tangential Signal Sensitivity vs. Frequency
Nominal Tangential Signal Sensitivity vs. Bias
Current at X-Band
Nominal Video Impedance vs. Bias Current
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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