RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3
| 参数名称 | 属性值 |
| 零件包装代码 | SOT |
| 包装说明 | SMALL OUTLINE, R-CDSO-N3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.03 A |
| 基于收集器的最大容量 | 0.8 pF |
| 集电极-发射极最大电压 | 30 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 20 |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-CDSO-N3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 1200 MHz |
| Base Number Matches | 1 |
| 2N4957UB | JANTX2N4957UB | JANTXV2N4957UB | JAN2N4957UB | |
|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 |
| 零件包装代码 | SOT | SOT | SOT | SOT |
| 包装说明 | SMALL OUTLINE, R-CDSO-N3 | SMALL OUTLINE, R-CDSO-N3 | SMALL OUTLINE, R-CDSO-N3 | SMALL OUTLINE, R-CDSO-N3 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| 基于收集器的最大容量 | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF |
| 集电极-发射极最大电压 | 30 V | 30 V | 30 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 20 | 20 | 20 | 20 |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-CDSO-N3 | R-CDSO-N3 | R-CDSO-N3 | R-CDSO-N3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
| 认证状态 | Not Qualified | Qualified | Qualified | Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 1200 MHz | 1200 MHz | 1200 MHz | 1200 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 参考标准 | - | MIL-19500/426 | MIL-19500/426 | MIL-19500/426 |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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