Product Specification
PE423641
Product Description
The PE423641 is a HaRP™ technology-enhanced
reflective SP4T RF switch. It has received AEC-Q100
Grade 2 certification and meets the quality and
performance standards that makes it suitable for use in
harsh automotive environments. It is designed to cover a
wide range of wireless applications from 50 MHz through
3 GHz such as cellular antenna band switching,
automotive infotainment and traffic safety applications.
No blocking capacitors are required if DC voltage is not
present on the RF ports.
The PE423641 is manufactured on Peregrine’s
UltraCMOS
®
process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate,
offering excellent RF performance.
Peregrine’s HaRP™ technology enhancements deliver
high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering
the performance of GaAS with the economy and
integration of conventional CMOS.
UltraCMOS
®
SP4T RF Switch
50–3000 MHz
Features
AEC-Q100 Grade 2 certified
Supports operating temperature up to
+105°C
HaRP
TM
technology enhancements
provide excellent linearity
Low harmonics of 2fo = –83 dBc
and 3fo = –77 dBc @ +35 dBm
IMD3 of –111 dBm @ WCDMA
band 1
IIP3 of 68 dBm
Low insertion loss
0.50 dB @ 1000 MHz
0.65 dB @ 2200 MHz
High isolation
32 dB @ 1000 MHz
25 dB @ 2200 MHz
High ESD performance
2 kV HBM on all pins
100V MM on all pins
1 kV CDM on all pins
Figure 1. Functional Diagram
Integrated decoder for 2-pin control
Accepts 1.8V and 2.75V levels
ESD
71-0094
Figure 2. Package Type
16-lead 3 x 3 mm QFN
Document No. DOC-12414-2
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©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 11
PE423641
Product Specification
Table 1. Electrical Specifications
@ +25°C, V
DD
= 2.75V
(Z
S
= Z
L
= 50Ω )
Parameter
Operational frequency
50–1000 MHz
Insertion loss
(symmetric ports)
RFC–RFX
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
Isolation
RFC–RFX
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
Return loss (active ports)
RFC–RFX
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
1000–2200 MHz
Return loss (common ports)
RFC–RFX
2200–2700 MHz
2700–3000 MHz
+35 dBm output power, 850/900 MHz
2nd harmonic
RFX
+33 dBm output power, 1800/1900 MHz
3rd harmonic
IMD3
Input IP2
Input IP3
Input 0.1 dB compression point
1
Switching time
RFC–RFX
RFC–RFX
RFC–RFX
RFX
+35 dBm output power, 850/900 MHz
+33 dBm output power, 1800/1900 MHz
RF Measured at 2.14 GHz at ANT port, input +20 dBm CW
signal at 1.95 GHz and –15 dBm CW signal at 1.76 GHz
50–3000 MHz
50–3000 MHz
50–3000 MHz
50% CTRL to 90% or 10% RF
–85
–77
–78
–111
115
68
37
1
2
–78
–73.5
–72.5
dBc
dBc
dBc
dBm
dBm
dBm
dBm
μs
30
23
21
20
Path
Condition
Min
50
0.50
0.65
0.80
0.95
32
25
23
22
24
19
16
14
23
16
14
13
–83
–80
Typ
Max
3000
0.60
0.75
0.95
1.15
Unit
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
Note 1: Input 0.1 dB compression point is a linearity figure of merit. Refer to
Table 3
for the operating RF input power (50Ω).
©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 11
Document No. DOC-12414-2
│
UltraCMOS
®
RFIC Solutions
PE423641
Product Specification
Table 1A. Electrical Specifications @ –40 to +105°C,
V
DD
= 2.75V
(Z
S
= Z
L
= 50Ω )
Parameter
Operational frequency
50–1000 MHz
Insertion loss
(symmetric ports)
RFC–RFX
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
Isolation
RFC–RFX
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
Return loss (active ports)
RFC–RFX
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
1000–2200 MHz
Return loss (common ports)
RFC–RFX
2200–2700 MHz
2700–3000 MHz
+35 dBm output power, 850/900 MHz
2nd harmonic
RFX
+33 dBm output power, 1800/1900 MHz
3rd harmonic
IMD3
Input IP2
Input IP3
Input 0.1 dB compression point
1
Switching time
RFC–RFX
RFC–RFX
RFC–RFX
RFX
+35 dBm output power, 850/900 MHz
+33 dBm output power, 1800/1900 MHz
RF Measured at 2.14 GHz at ANT port, input +20 dBm CW
signal at 1.95 GHz and –15 dBm CW signal at 1.76 GHz
50–3000 MHz
50–3000 MHz
50–3000 MHz
50% CTRL to 90% or 10% RF
–85
–77
–78
–111
115
68
37
1
2
–74
–69.5
–68.5
dBc
dBc
dBc
dBm
dBm
dBm
dBm
μs
30
23
21
20
Path
Condition
Min
50
0.50
0.65
0.80
0.95
32
25
23
22
24
19
16
14
23
16
14
13
–83
–76
Typ
Max
3000
0.75
0.90
1.10
1.30
Unit
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
Note 1: Input 0.1 dB compression point is a linearity figure of merit. Refer to
Table 3
for the operating RF input power (50Ω).
Document No. DOC-12414-2
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Page 3 of 11
PE423641
Product Specification
Figure 3. Pin Configuration (Top View)
Table 3. Operating Ranges
Parameter
Supply voltage
Supply current
(V
DD
= 2.75V, +25°C only)
Digital input high (V1, V2)
Digital input low (V1, V2)
RF input power, CW
1
Operating temperature
range
Symbol
V
DD
I
DD
V
IH
V
IL
P
MAX,CW
T
OP
–40
+25
1.4
0
Min
2.65
Typ
2.75
13
Max
3.3
50
V
DD
0.4
+35
+105
Unit
V
µA
V
V
dBm
°C
Note 1: 100% duty cycle, all bands, 50Ω
Table 4. Absolute Maximum Ratings
Parameter/Condition
Symbol
V
DD
V
I
P
MAX,ABS
T
ST
V
ESD ,HBM
V
ESD,MM
V
ESD,CDM
-65
Min
–0.3
–0.3
Max
3.7
3.7
+37
+150
2000
100
1000
Unit
V
V
dBm
°C
V
V
V
Supply voltage
Digital input voltage (V1, V2)
Description
No connect
Supply voltage
Digital control logic input 2
Digital control logic input 1
1
Table 2. Pin Descriptions
Pin #
1, 5, 7, 9,
10, 12, 14,
16
2
3
4
6
8
11
13
15
Pad
Pin Name
N/C
V
DD
V2
V1
RF4
RF input power, max
Storage temperature range
ESD voltage HBM
1
, all pins
ESD voltage MM
2
, all pins
ESD voltage CDM
3
, all pins
RF port
RF port
RF common
RF port
RF port
Exposed pad: Ground for proper operation
Notes: 1. Human Body Model (MIL-STD-883 Method 3015)
2. Machine Model (JEDEC JESD22-A115)
3. Charged Device Model (JEDEC JESD22-C101)
RF3
1
RFC
1
RF1
1
RF2
1
GND
Note 1: RF pins 6, 8, 13, and 15 must be at 0 VDC. The RF pins do not require
DC blocking capacitors for proper operation if the 0 VDC requirement
is met.
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted
to the limits in the Operating Ranges table.
Operation between operating range maximum and
absolute maximum for extended periods may
reduce reliability.
©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 11
Document No. DOC-12414-2
│
UltraCMOS
®
RFIC Solutions
PE423641
Product Specification
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE423641 in the 16-lead 3x3 mm QFN package is
MSL1.
Table 5. Truth Table
Path
RFC–RF1
RFC–RF2
RFC–RF3
RFC–RF4
V2
0
1
0
1
V1
0
0
1
1
Switching Frequency
The PE423641 has a maximum 25 kHz switching
frequency.
Switching frequency describes the time duration
between switching events. Switching time is the
time duration between the point the control signal
reaches 50% of the final value and the point the
output signal reaches within 10% or 90% of its
target value. Switching time is provided in
Table 1
and
Table 1A.
Document No. DOC-12414-2
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