INCH POUND
MIL-PRF-19500/181G
16 June 2000
SUPERSEDING
MIL-PRF-19500/181F
30 June 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N718A, 2N1613, AND 2N1613L; JAN, JANTX, AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1. Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2. Physical dimensions. Figure 1, (similar to TO-18); figure 2, (similar to TO-39, and TO-5).
1.3. Maximum ratings. Unless otherwise specified, T
C
= +25°C.
Type
P
T
See note 1
T
C
= +25°C
W
1.8
3.0
3.0
P
T
See note 2
T
A
= +25°C
W
0.5
0.8
0.8
V
CBO
V
CEO
V
EBO
I
C
V
CER
R
BE
= 10
Ω
V dc
50
50
50
R
θJC
°C/W
97
58
58
R
θJA
°C/W
325
175
175
T
J
and
T
STG
°C
-65
to
+200
V dc
75
75
75
V dc
30
30
30
V dc
7
7
7
mA dc
500
500
500
2N718A
2N1613
2N1613L
NOTE:
1 Derate linearly at 17.2 mW/°C for type 2N1613 and 2N1613L and at 10.3 mW/°C for type 2N718A for T
C
> +25°C.
2 Derate linearly at 5.7 mW/°C for type 2N1613 and 2N1613L for T
A
> 60°C, and at 3.08 mW/°C for type 2N718A for
T
A
> +37.5°C.
1.4. Primary electrical characteristics.
Limits
h
FE1
1/
h
FE2
1/
h
FE3
1/
h
FE4
1/
V
CE(SAT)
1/
|h
FE
|
at 20 MHz
V
CE
= 10 V dc
I
C
= 50 mA dc
f = 20 MHz
3
1.5
V
CE
= 10 V dc
I
C
= 0.1 mA dc
V
CE
= 10 V dc
I
C
= 10 mA dc
V
CE
= 10 V dc
I
C
= 150 mA dc
V
CE
= 10 V dc
I
C
= 500 mA dc
I
C
= 150 mA dc
I
B
= 15 mA dc
V dc
Min
Max
20
35
40
120
20
1/ Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, Post Office Box 3990, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by
letter.
AMSC N/A
Page 1 of 13
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/181G
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section
does not include documents cited in other sections of this specification or recommended for additional information or as
examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that
they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they
are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Sevices, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein
(except for related associated specifications or specification sheets), the text of this document takes precedence.
Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been
obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2. Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying
activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.3. Associated detail specification. The individual item requirements shall be in accordance with MIL-PRF-19500
and as specified herein.
3.4. Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified
in MIL-PRF-19500.
2
MIL-PRF-19500/181G
Symbol
Inches
Min
Max
.195
.210
.230
Millimeters
Min
4.52
4.32
5.31
Max
4.95
5.33
5.84
Notes
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
P
Q
r
α
.178
.170
.209
.100 TP
.016
.500
.016
.021
.750
.019
.050
.250
.028
.036
.100
.030
.010
45° TP
.048
.046
2.54 TP
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
0.71
.91
2.54
0.76
.025
45° TP
1.22
1.17
5
8, 9
7, 9
4, 8, 9
9
9
5
3
6
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not
exceed .010 inch (0.254 mm).
4. (Three leads) LU applies between L
1
and L
2
. LD applies between L
2
and .5 inc (12.70 mm) from seating
plane. Diameter is uncontrolled in L
1
and beyond .5 inch (12.70 mm) from seating plane.
5. Measured from maximum diameter of the actual device.
6. Details of outline in this zone optional.
7. The collector shall be electrically connected to the case.
8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
9. All 3 leads.
10. In accordance with ANSI Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 1. Physical dimensions (TO-18).
3
MIL-PRF-19500/181G
Symbol
Dimensions
Inches
Millimeter
Min
Max
.260
Min
6.10
Max
6.60
Notes
CH
LC
LD
LL
LU
L
1
L
2
HD
CD
h
P
Q
r
TL
TW
α
.240
.200 TP
.016
.021
5.08 TP
0.41
0.53
7
8,9
See notes 12, and 13
.016
.019
.050
.250
.355
.305
.009
.100
.050
.010
.029
.028
.045
.034
0.74
0.71
.370
.335
.041
6.35
8.51
7.75
0.23
2.54
1.27
0.25
1.14
0.86
4
0.71
7
9.40
8.51
1.04
6
5
0.41
0.48
1.27
8,9
8, 9
8, 9
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab
at MMC. The device may be measured by direct methods or by the gauge and gauging procedure described
on gauge drawing on figure 2.
8. LU applies between L
1
and L
2
. LU applies between L
2
and LL minimum. Diameter is uncontrolled in L
1
and
beyond LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. For transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
14. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
FIGURE 2. Physical dimensions (similar to TO -5 and TO -39).
4
MIL-PRF-19500/181G
3.5. Interface and physical dimensions. The design, construction and physical dimensions shall be as specified on
figures 1 and 2 herein.
3.5.1. Lead finish. Lead finish shall be solderable as defined in MIL-STD-750, MIL-PRF-19500 and herein. Where a
choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.6. Marking. Marking shall be in accordance with MIL-PRF-19500.
3.7. Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.8. Electrical test requirements. The electrical test requirements shall be the subgroups specified in Table I herein.
4. VERIFICATION
4.1. Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3)
Conformance inspection (see 4.4).
4.2. Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3. Screening (JANTX and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV),
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANTX and JANTXV levels
3c
9
10
11
12
13
Thermal impedance (see 4.3.2)
Not applicable
48 hours minimum
I
CBO2
, h
FE3
See 4.3.1
80 hours minimum
Subgroup 2 of table I herein;
∆I
CBO2
= 100% of initial value or 5 nA dc, whichever is
greater;
∆h
FE3
= +15%
5
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