RF Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 30W, 26V
5/14/04
Preliminary
MAPLST1820-030CF
Features
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
30W CW Output Power at P
1dB
13dB Gain at P
1dB
45% Drain Efficiency at P
1dB
10:1 VSWR Ruggedness (CW @ 30W,
26V, 1900MHz)
Internal input and output matching
Package Style
P-237
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Drain Current — Continuous
Total Power Dissipation @ T
C
= 25 °C
Storage Temperature
Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
STG
T
J
Rating
65
20
10
97
-40 to +150
+200
Units
V
dc
V
dc
A
dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
ΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Characteristic
Drain-Source Breakdown Voltage
OFF
(V
GS
= 0 Vdc, I
D
= 20 µAdc)
CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0)
26
DS
GS
Gate—Source Leakage Leakage
Zero Gate Voltage DrainCurrent Current
(V
GS
= 5 Vdc, V
(V
DS
= 26Vdc, V
DS
==0)
0)
GS
Gate Threshold Voltage
Gate—SourceVdc, I = 20 mA)
(V
DS
= 10 Leakage Current
D
(V
GS
= 5 Vdc, V
DS
= 0)
Drain-Source On-Voltage
ON CHARACTERISTICS
A)
(V
GS
= 10 Vdc, I
D
= 1
Forward Transconductance
(V
GS
= 10 Vdc, I
D
= 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
Input Capacitance (Capacitance includes internal matching capacitors)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
DYNAMIC CHARACTERISTICS (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
RF FUNCTIONAL TESTS
(In M/A-COM Test Fixture) (2)
FUNCTIONAL TESTS
@ 25ºC (In M/A-COM Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 26 Vdc, P
OUT
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Two-Tone Drain Efficiency
(V
DS
= 26 Vdc, P
OUT
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 26 Vdc, P
OUT
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 26 Vdc, P
OUT
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Two-Tone Drain Efficiency
(V
DS
= 26 Vdc, P
OUT
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Two-Tone Intermodulation Distortion
(V
DS
= 26 Vdc, P
OUT
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Output VSWR Tolerance
(V
DD
= 26 Vdc, P
OUT
= 30 W, I
DQ
= 300 mA, f = 1900 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
G
ps
12
13
—
dB
C
iss
C
oss
C
rss
—
—
—
50
32
1.4
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Symbol
Min
V
(BR)DSS
65
I
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
I
GSS
V
DS(on)
Gm
——
——
—
2
—
—
Typ
—
——
——
2.6
—
0.32
1.6
Max
—
100
10
11
4
1
—
—
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
Vdc
µAdc
Vdc
S
EFF (ŋ)
—
33
—
%
IMD
—
-30
—
dBc
G
ps
12
13
—
dB
EFF (ŋ)
—
33
—
%
IMD
—
-30
-28
dBc
Ψ
No Degradation In Output Power
Before and After Test
2
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
C1,C2
C3,C10
C4
C5,C11
C6,C15
C7
C8
C12
C13
Z1-Z8
Electrolytic Capacitor, 470
µF
Ceramic Chip Capacitor, 10 pF
Ceramic Chip Capacitor, 0.7 pF
Ceramic Chip Capacitor, 5.1 pF
Ceramic Chip Capacitor, 0.1
µF
Ceramic Chip Capacitor, 1.2 pF
Ceramic Chip Capacitor, 0.6 pF
Ceramic Chip Capacitor, 91 pF
Electrolytic Capacitor, 22
µF
Distributed Microstrip Element
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1
Inductor, 8 nH, CoilCraft A03T
L2,L3,L5,L6,L7
Inductor, Ferrite Bead, Fair Rite
2743019477
L4
Inductor, 28
µH,
CoilCraft A08T
P1,P2
Connector, AMP 640457-4
Q1
Transistor, MAPLST1920-030WF
R1
Chip Resistor, 3.7 Ohm
R2, R3 Chip Resistor, 12 Ohm
R4,R5,R6 Chip Resistor, 10 Ohm
PC Board (74350126-01), Arlon Woven Glass
Teflon .030” Thick, Er=2.54, 2 Oz Copper
Both Sides
Figure 1. 1930—1990 MHz Test Fixture Schematic
Figure 2. 1930—1900 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
20
Gain (dB), Efficiency (%)
18
16
14
-45
Gain (dB), Efficiency (%)
V
DD
= 26V, Iq = 350mA, P
OUT
=(36dBm)
IS-95, 9 channels Forward
Efficiency
ACPR 885kHz
-40
25
20
15
10
5
0
10
15
20
Vdd = 26V, Iq = 350mA
f = 1.96 GHz
IS-95 9 Channels Forward
Gain
ACPR 885 kHz
Nd
ACPR 1.98 MHz
-30
-40
-50
-60
-70
-80
40
ACPR (dBc)
46
-55
Gain
-60
ACPR 1.98 MHz
-65
12
10
8
1.9
1.92
1.94
1.96
1.98
Frequency (GHz)
2
-70
2.02
ACPR (dBc)
-50
25
30
P(ave) dBm
35
Graph 1. Class AB Broadband Circuit
Performance
Graph 2. CDMA ACPR, Power Gain and
Drain Efficiency vs. Output Power
-20
-25
-30
V
DD
= 26V, 1.96 GHz
Two tones, 100 kHz spacing
IMD (dBc)
-20
-30
-40
-50
-60
-70
V
DD
= 26V Iq = 300mA
f = 1.96 GHz, 100kHz tone spacing
IM3 (dBc)
-35
-40
-45
-50
-55
-60
250 mA
300 mA
150 mA
200 mA
350 mA
400 mA
IM3
IM5
IM7
-80
24
26
28
30
32
34
36
38
40
42
44
P(ave) dBm
20 22 24 26 28 30 32 34 36 38 40 42 44 46
P
OUT
(dBm PEP)
Graph 3. Intermodulation Distortion
vs. Output Power
Graph 4. Intermodulation Distortion
Products vs. Output Power
14
13.5
13
12.5
400 mA
350 mA
300 mA
250 mA
200 mA
150 mA
Gain (dB)
12
11.5
11
10.5
10
9.5
9
V
DD
= 26V, 1.96 GHz
Two tones, 100 kHz spacing
20 22 24 26 28 30 32 34 36 38 40 42 44 46
P
OUT
(dBm) PEP
Graph 5. Power Gain versus Output
Power
4
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
Package Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
5
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Tel.+81-44-844-8296, Fax +81-44-844-8298
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Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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