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MAPLST2122-030CF

产品描述Transistor,
产品类别分立半导体    晶体管   
文件大小182KB,共7页
制造商MACOM
官网地址http://www.macom.com
标准
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MAPLST2122-030CF概述

Transistor,

MAPLST2122-030CF规格参数

参数名称属性值
是否Rohs认证符合
包装说明,
Reach Compliance Codeunknown
Base Number Matches1

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MAPLST2122-030CF
LDMOS RF Line Power FET Transistor
30 W , 2110-2170 MHz, 28V
Product Image
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz
frequency band. Suitable for TDMA, CDMA, and multicarrier power
amplifier applications.
30W output power at P1dB (CW)
12dB minimum gain at P1dB (CW)
Discontinued
(For Reference Only)
W-CDMA typical performance:
(28VDC, -45dBc ACPR @ 4.096MHz)
Output power: 4.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
10:1 VSWR ruggedness (CW @ 30W, 28V, 2110MHz)
MAPLST2122-030CF
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be ob-
served.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

 
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