MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
Features
♦
♦
♦
♦
♦
♦
♦
♦
♦
Broad Bandwidth
Specified from 50MHz to 20GHz
Usable from 50MHz to 26.5GHz
Lower Insertion Loss / Higher Isolation
than pHempt
Rugged
Fully Monolithic,
Glass Encapsulated Construction
Up to +33dBm C.W. Power Handling
RoHS Compliant
V6
MASW-001100-1190
Description
The MASW-001100-1190, MASW-002100-1191 and
MASW-003100-1192 are broadband monolithic
switches using series and shunt connected silicon
PIN diodes. They are designed for use as 2W, high
performance switches in applications up to 26.5GHz.
They provide performance levels superior to those
realized by hybrid MIC designs incorporating
beamlead and PIN chip diodes that require chip and
wire assembly.
These switches are fabricated using M/A-COM’s
patented HMIC
TM
(Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that
form series and shunt diodes or vias by imbedding
them in low loss, low dispersion glass. By using
small spacing between elements, this combination of
silicon and glass gives HMIC devices low loss and
high isolation performance through low
millimeter frequencies.
Large bond pads facilitate the use of low inductance
ribbon leads, while gold backside metallization
allows for manual or automatic chip bonding via
80/20, AuSn solder or conductive Ag epoxy.
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF C.W. Incident Power
Bias Current +25°C
Absolute Maximum
-65
o
C to +125
o
C
-65
o
C to +150
o
C
+175
o
C
| - 50V |
+33dBm C.W.
±20mA
MASW-002100-1191
MASW-003100-1192
1
Max operating Conditions for a Combination of
RF Power, D.C. Bias and Temperature:
+33dBm CW @ 15mA (per diode) @+85°C
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
MASW-001100-1190 (SPST)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias
Parameter
Insertion Loss
V6
Frequency
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
Minimum
-
-
-
46
39
34
22
15
14
-
-
-
Nominal
0.4
0.5
0.7
55
47
42
31
33
27
20
-
0.2
Maximum
0.7
0.9
1.2
-
-
-
-
-
-
-
50
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
Isolation
Input Return Loss
Switching Speed
1
Voltage Rating
2
Signal Compression (500mW)
MASW-002100-1191 (SPDT)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias
Parameter
Insertion Loss
1.) Typical Switching Speed measured from 10 % to 90 % of
detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or
series PIN diodes shall be 10mA maximum at -50 volts.
Frequency
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
Minimum
-
-
-
48
40
34
20
18
15
-
-
-
Nominal
0.4
0.5
0.7
63
50
42
27
25
25
20
-
0.2
Maximum
0.7
1.0
1.2
-
-
-
-
-
-
-
50
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
Isolation
Input Return Loss
Switching Speed
1
Voltage Rating
2
Signal Compression (500mW)
MASW-003100-1192 (SP3T)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias
Parameter
Insertion Loss
1.) Typical Switching Speed measured from 10 % to 90 % of
detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or
series PIN diodes shall be 10mA maximum at -50 volts.
Frequency
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
Minimum
-
-
-
49
42
33
20
14
11
-
-
-
Nominal
0.5
0.7
0.9
57
48
42
24
22
21
20
-
0.2
Maximum
0.8
1.1
1.5
-
-
-
-
-
-
-
50
-
Isolation
Input Return Loss
Switching Speed
1
Voltage Rating
2
Signal Compression (500mW)
2
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
Typical Performance Curves at T
A
= +25°C, 20mA Bias Current
MASW-001100-1190
RETURN LOSS vs. FREQUENCY
-10
-15
-0.2
V6
MASW-001100-1190
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS (dB
30
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
RETURN LOSS (dB)
Output Return Loss
-20
-25
-30
-35
0
5
10
15
20
25
Input Return Loss
0
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
MASW-002100-1191
RETURN LOSS vs. FREQUENCY
-10
MASW-002100-1191
INSERTION LOSS vs. FREQUENCY
-0.2
-15
INSERTION LOSS (dB
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
RETURN LOSS (dB)
Output Return Loss
-20
-25
-30
Input Return Loss
-35
0
5
10
15
20
25
30
0
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
MASW-003100-1192
RETURN LOSS vs. FREQUENCY
-10
MASW-003100-1192
INSERTION LOSS vs. FREQUENCY
-0.3
INSERTION LOSS (dB
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-1.1
-1.2
RETURN LOSS (dB)
-15
Output Return Loss
-20
-25
Input Return Loss
-30
0
5
10
15
20
25
30
0
5
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
S-Parameters:
S-Parameter data for these devices are available upon request.
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
Typical Performance Curves @ TA = +25°C, 20mA Bias Current
MASW-001100-1190
ISOLATION vs. FREQUENCY
-35
-40
V6
INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz
-22
INPUT RETURN LOSS (dB
-24
-26
-28
-30
-32
-34
0
5
10
15
20
25
30
35
40
45
50
55
MA S W-0 0 110 0
MA S W-0 0 3 10 0
ISOLATION (dB)
-45
-50
-55
-60
-65
-70
-75
-80
0
5
10
15
20
25
30
MA S W-0 0 2 10 0
CURRENT (mA )
OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz
OUTPUT RETURN LOSS (dB
-21.5
-22
-22.5
-23
-23.5
-24
-24.5
-25
-25.5
0
5
10
15
20
25
30
35
40
45
50
55
MA S W-0 0 3 10 0
MA S W-0 0 2 10 0
MAS W-0 0 110 0
FREQUENCY (GHz)
MASW-002100-1191
ISOLATION vs. FREQUENCY
-35
-40
ISOLATION (dB)
-45
-50
-55
-60
-65
-70
CURRENT (mA )
INSERTION LOSS vs. BIAS CURRENT @ 10 GHz
-0.35
INSERTION LOSS (dB
-75
-80
0
5
10
15
20
25
30
-0.4
-0.45
-0.5
-0.55
-0.6
-0.65
-0.7
0
5
10
15
20
25
30
35
40
MAS W-0 0 2 10 0
MAS W-0 0 110 0
FREQUENCY (GHz)
MAS W-0 0 3 10 0
MASW-003100-1192
ISOLATION vs. FREQUENCY
-35
-40
45
50
55
CURRENT (mA)
ISOLATION (dB)
-45
-50
-55
-60
-46
-47
ISOLATION vs. BIAS CURRENT @ 10 GHz
)
ISOLATION (dB
-65
-70
-75
-80
0
5
10
15
20
25
30
-48
-49
-50
-51
-52
-53
-54
0
5
10
15
20
25
30
35
40
45
50
55
MAS W-0 0 2 10 0
MAS W-0 0 3 10 0
MAS W-0 0 110 0
FREQUENCY (GHz)
CURRENT (mA)
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
Operation of the MASW Series Switches
Operation of the MASW series of PIN switches is achieved
by simultaneous application of negative DC current to the
low loss switching arm J1, J2, or J3, and positive DC
current to the remaining switching arms as shown in the
bias connection circuits. DC return is achieved via J1. The
control currents should be supplied by constant current
sources. The voltages at these points will not exceed
+1.5 volts (1.2V typical) at currents up to +20mA. In the low
loss state, the series diode must be forward biased and the
shunt diode reverse biased. In the isolated arm, the shunt
diode is forward biased and the series diode is reverse
biased.
V6
MASW-001100-1190 and Bias Connections
1
J1
RF INPUT
20pF
20nH
J2 BIAS
20pF
100Ω
20nH
20pF
20pF
Switch
Chip
J2
RF OUTPUT
Driver Connections
MASW-001100-1190
Control Level
(DC Current) at
J2
-20mA
+20mA
Condition of
RF Output
J1-J2
Low Loss
Isolation
MASW-002100-1191 and Bias Connections
1
J1 RF INPUT
20pF
J3 BIAS
20nH
J2 BIAS
MASW-002100-1191
Control Level
(DC Current) at
J2
-20mA
+20mA
J3
+20mA
-20mA
100Ω
20nH
20pF
20pF
20nH
20pF
Condition of
RF Output
J1-J2
Low Loss
Isolation
Condition of
RF Output
J1-J3
Isolation
Low Loss
20pF
J3
RF OUTPUT
Switch
Chip
20pF
J2
RF OUTPUT
MASW-003100-1192
Control Level
(DC Current) at
J2
-20mA
+20mA
+20mA
J3
+20mA
-20mA
+20mA
J4
+20mA
+20mA
-20mA
MASW-003100-1192 and Bias Connections
1
J1 RF INPUT
20pF
J4 BIAS
20nH
J2 BIAS
Cond. of
Cond. of Cond. of RF
RF Output RF Output
Output
J1-J2
Low Loss
Isolation
Isolation
J1-J3
Isolation
Low Loss
Isolation
J1-J4
Isolation
Isolation
Low Loss
20pF
20nH
20pF
100Ω
20nH
20pF
20pF
J4
RF OUTPUT
20pF
J2
RF OUTPUT
Handling Considerations
Cleanliness:
These chips should be handled in a clean
environment.
Electro-Static Sensitivity:
The MASW series PIN switches
are ESD, Class 1A sensitive (HBM). The proper ESD
handling procedures should be used.
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
20pF
20nH
J3 BIAS
20pF
J3
RF OUTPUT
Notes:
1. RLC values are for an operation frequency of 2-18GHz and
bias current of ± 20mA per diode.
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