128K x 8
Radiation Hardened
Static RAM – 5 V
Features
190A325
198A592
Product Description
Other
• Read/Write Cycle Times
≤25
ns, 30 ns, 40 ns (-55 to
125°C)
• SMD Number 5962H96877
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ±10% Power Supply
• Low Operating Power
• Packaging Options
• 40-Lead Flat Pack (0.775” x 0.710”)
• 40-Lead Flat Pack - Small Cavity (0.775” x 0.650”)
32-Lead Flat Pack (0.652” x 0.820”)
Radiation
• Fabricated with Bulk CMOS 0.5 µm Process
• Total Dose Hardness through 1x10
6
rad(Si)
• Neutron Hardness through 1x10
14
N/cm
2
• Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
• Soft Error Rate of < 1x10
-11
Upsets/Bit-Day
• Dose Rate Survivability through 1x10
12
rad(Si)/s
• Latchup Free
General Description
The 128K x 8 radiation hardened static RAM
is a high performance 131,072 word x 8-bit
static random access memory with industry-
standard functionality. It is fabricated with
BAE SYSTEMS’ radiation hardened
technology and is designed for use in
systems operating in radiation
environments. The RAM operates over the
full military temperature range and requires
a single 5 V ±10% power supply. The RAM
is available with either TTL or CMOS
compatible I/O. Power consumption is
typically less than 20 mW/MHz in operation,
and less than 10 mW in the low power
disabled mode. The RAM read operation is
fully asynchronous, with an associated
typical access time of 19 nanoseconds.
BAE SYSTEMS’ enhanced bulk CMOS
technology is radiation hardened through
the use of advanced and proprietary design,
layout, and process hardening techniques.
BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122
Functional Diagram
A0
Top/Bottom Decoder
A1 - A2
Block Address Decoder
A3
L/R Side/Block
A9 - A16
Row Address Decoder
((256 x 32) x 2 x 4) x 8 x 2
Memory Cell Array
8 Bit Word Input/Output
W
Column Address Decoder
G
E
S
DQ0-DQ7
A4-A8
Signal Definitions
A: 0-16
– Address input pins that select a particular
eight-bit word within the memory array.
– Bi-directional data pins that serve as data
outputs during a read operation and as data
inputs during a write operation.
– Negative chip select, when at a low level,
allows normal read or write operation. When at
a high level, S forces the SRAM to a
precharge condition, holds the data output
drivers in a high impedance state and disables
the data input buffers only. If this signal is not
used, it must be connected to GND.
W
DQ: 0-7
– Negative write enable, when at a low level, activates a
write operation and holds the data output drivers in a
high impedance state. When at a high level, W allows
normal read operation.
– Negative output enable, when at a high level holds the
data output drivers in a high impedance state. When at
a low level, the data output driver state is defined by S,
W, and E. If this signal is not used it must be connected
to GND.
– Chip enable, when at a high level allows normal
operation. When at a low level, E forces the SRAM to a
precharge condition, holds the data output drivers in a
high impedance state and disables all the input buffers
except the S input buffer. If this signal is not used, it
must be connected to V
DD
.
G
S
E
Truth Table
Inputs
(1),(2)
E
S
W
G
I/O
Notes:
Power
Mode
1) V
IN
for don’t care (X) inputs = V
IL
or V
IH
.
Active
Active
Standby
Standby
2) When G = high, I/O is high-Z.
3) To dissipate the minimum amount of
standby power when in standby mode:
S= V
DD
and E = GND. All other input
levels may float.
Write
Read
Standby
Standby
(3)
High
High
X
Low
Low
Low
High
X
Low
High
X
X
X
Low
X
X
Data-In
Data-Out
High-Z
High-Z
2
Absolute Maximum Ratings
Applied Conditions
(1)
Minimum
Maximum
Storage Temperature Range (Ambient)
Operating Temperature Range
Positive Supply Voltage
Input Voltage
(2)
Output Voltage
(2)
Power Dissipation
(3)
Lead Temperature (Soldering 5 sec)
Electrostatic Discharge Sensitivity
(4)
Notes:
-65°C
-55°C
-0.5 V
-0.5 V
-0.5 V
+150°C
+125°C
+7.0 V
V
DD
+ 0.5 V
V
DD
+ 0.5 V
2.0 W
+250°C
(Class II)
1) Stresses above the absolute maximum rating may cause permanent
damage to the device. Extended operation at the maximum levels may
degrade performance and affect reliability. All voltages are with
reference to the module ground leads.
2) Maximum applied voltage shall not exceed +7.0 V.
3) Guaranteed by design; not tested.
4) Class as defined in MIL-STD-883, Method 3015.
Recommended Operating Conditions
Symbol
Parameters
(1)
Minimum
Maximum
Units
V
DD
GND
T
C
V
IL
V
IH
Supply Voltage
Supply Voltage Reference
Case Temperature
Input Logic “Low” - CMOS
Input Logic “Low” - TTL
Input Logic “High” - CMOS
Input Logic “High” - TTL
Note:
+4.5
0.0
-55
0.0
0.0
+3.5
+2.0
+5.5
0.0
+125
+1.5
+0.8
V
DD
V
DD
Volt
Volt
Celsius
Volt
Volt
1)All voltages referenced to GND.
Power Sequencing
The substrate of this module is connected directly to Ground.
Power shall be applied to the device only in the following
sequences to prevent damage due to excessive currents:
• Power-Up Sequence: GND, V
DD
, Inputs
• Power-Down Sequence: Inputs, V
DD
, GND
3
DC Electrical Characteristics
Limits
Minimum
Maximum
Test
Symbol
Test Conditions
(1)
Device Type
Units
Supply Current
(Cycling Selected)
I
DD1
F = F
MAX
= 1/t
AVAV(min)
S = V
IL
= GND
E = V
IH
= V
DD
No Output Load
F = F
MAX
= 1/t
AVAV(min)
S = V
IH
= V
DD
E = V
IL
= GND
F = 0 MHz
S = V
IH
= V
DD
E = V
IL
= GND
V
DD
= 2.5 V
I
OH
= -4 mA
I
OH
= -200 µA
I
OL
= 8 mA
I
OL
= 200 µA
V
DD
= V
DR
CMOS
TTL
CMOS
TTL
0 V
≤
V
IN
≤
5.5 V
0 V
≤
V
OUT
≤
5.5 V
By Design/
Verified By
Characterization
By Design/
Verified By
Characterization
All
180
mA
Supply Current
(Cycling De-Selected)
Supply Current
(Standby)
I
DD2
All
2.0
mA
I
DD3
All
2.0
mA
Data Retention Current
I
DR
All
4.0
V
DD
- 0.5 V
1.0
mA
High Level Output Voltage
Low Level Output Voltage
Data Retention Voltage
High Level Input Voltage
Low Level Input Voltage
Input Leakage
Output Leakage
C
in
V
OH
V
OL
V
DR
V
IH
V
IL
I
ILK
I
OLK
(2)
All
All
All
All
All
All
All
All
V
0.4
0.05
V
V
V
1.5
0.8
V
µA
µA
pF
2.5
3.5
2.0
-5
-10
5
10
7
C
out
(2)
All
10
pF
Note:
1) Typical operating conditions:
-55 °C
≤
T
case
≤
+125°C; 4.5 V
≤
V
DD
≤
5.5 V; unless otherwise specified.
2) Guaranteed by design and verified by periodic characterization.
Output Load Circuit
300
Ω
± 10%
2.8V
50 pF + 10%
4
Read Cycle AC Timing Characteristics
(1)
Minimum or
Maximum
Worst Case By Speed
-25
-30
-40
Test
Symbol
Units
Read Cycle Time
Address Access Time
Output Hold After Address Change
Chip Select Access Time
Chip Select to Output Active
Chip Select to Output Disable
Chip Enable Access Time
Chip Enable to Output Active
Chip Disable to Output Disable
Output Enable Access Time
Output Enable to Output Active
Output Enable to Output Disable
Note:
t
AVAV
t
AVQV
t
AXQX
t
SLQV
t
SLQX
t
SHQZ
t
EHQV
t
EHQX
t
ELQZ
t
GLQV
t
GLQX
t
GHQZ
Minimum
Maximum
Minimum
Maximum
Minimum
Maximum
Maximum
Minimum
Maximum
Maximum
Minimum
Maximum
25
25
30
30
40
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
40FP - 0 40FP - 0 40FP - 0
32FP - 2 32FP - 2 32FP - 2
25
0
12
25
0
12
10
0
12
30
0
12
30
0
12
12
0
12
40
0
15
40
0
15
15
0
15
1)Test conditions: input switching levels V
IL
/V
IH
= 0.5 V/V
DD
-0.5 V (CMOS), V
IL
/V
IH
= 0 V/3 V (TTL), input rise
and fall times < 5 ns, input and output timing reference levels shown in the Tester AC Timing Characteristics
table, capacitive output loading C
L
= 50 pF. For C
L
> 50 pF, derate access times by 0.02 ns/pF (typical).
-55°C
≤
T
case
≤
+125°C; 4.5 V
≤
V
DD
≤
5.5 V; unless otherwise specified.
Read Cycle Timing Diagram
t
AVAV
Address
Valid Address
t
AVQV
t
SLQV
S
t
AXQX
t
SLQX
t
EHQV
E
t
SHQZ
t
EHQX
t
GLQV
G
t
ELQZ
t
GLQX
Data
Out
t
SHQZ
Valid Data
High Impedance
5
嵌入式系统
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