32K x 8
Radiation Hardened
Static RAM – 5 V
Features
167A690
182A934
Product Description
Other
• Read/Write Cycle Times
≤30
ns (-55 °C to 125°C)
• SMD Number 5962H92153
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ±10% Power Supply
• Low Operating Power
• Packaging Options
• 36-Lead Flat Pack (0.630” x 0.650”)
• 28-Lead DIP, MIL-STD-1835, CDIP2-T28
Radiation
• Fabricated with Bulk CMOS 0.8 µm Process
• Total Dose Hardness through 1x10
6
rad(Si)
• Neutron Hardness through 1x10
14
N/cm
2
• Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
• Soft Error Rate of < 1x10
-11
Upsets/Bit-Day
• Dose Rate Survivability through 1x10
12
rad(Si)/s
• Latchup Free
General Description
The 32K x 8 radiation hardened static RAM is a
high performance, low power device designed
and fabricated in 0.8 µm Radiation Hardened
Complementary Metal Oxide Semiconductor
(RHCMOS) technology. BAE SYSTEMS’ device
is designed for radiation environments using
industry standard functionality. The memory can
be personalized for either CMOS or Transistor
Transistor Logic (TTL) input receivers. The
SRAM operates over the full military temperature
range and requires a single 5 V ±10% power
supply. Power consumption is typically less than
20 mW/MHz in operation, and less than 10 mW in
the low power disabled mode. The SRAM read
operation is fully asynchronous, with an
associated typical access time of 20
nanoseconds.
BAE SYSTEMS’ bulk CMOS technology achieves
radiation hardening via a combination of process
technology enhancements and specific circuit
improvements.
BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122
Functional Diagram
•• •
A:11
32,768 x 8
Memory Array
•••
Column Decoder
Data Input/Output
Row Decoder
E
S
W
G
A:4
DQ:8
Signal Definitions
A: 0-14
– Address input pins that select a particular
eight-bit word within the memory array.
– Bi-directional data pins that serve as data
outputs during a read operation and as data
inputs during a write operation.
W
DQ: 0-7
– Negative write enable, when at a low level, activates a
write operation and holds the data output drivers in a
high impedance state. When at a high level, W allows
normal read operation.
– Negative output enable, when at a high level holds the
data output drivers in a high impedance state. When at
a low level, the data output driver state is defined by S,
W, and E. If this signal is not used it must be connected
to GND.
– Chip enable, when at a high level allows normal
operation. When at a low level, E forces the SRAM to a
precharge condition, holds the data output drivers in a
high impedance state and disables all the input buffers
except the S input buffer. If this signal is not used, it
must be connected to V
DD
.
G
S
– Negative chip select, when at a low level,
allows normal read or write operation. When
at a high level, S forces the SRAM to a
precharge condition, holds the data output
drivers in a high impedance state and
disables the data input buffers only. If this
signal is not used, it must be connected to
GND.
E
Truth Table
Inputs
(1),(2)
E
(4)
High
High
X
Low
S
Low
Low
High
X
W
Low
High
X
X
G
X
Low
X
X
I/O
Data-In
Data-Out
High-Z
High-Z
Notes:
Power
Active
Active
Standby
Standby
1) V
IN
for don’t care (X) inputs = V
IL
or V
IH
.
2) When G = high, I/O is high-Z.
3) To dissipate the minimum amount of
standby power when in standby mode:
S= V
DD
and E = GND. All other input
levels may float.
4) E is tied high internally to the chip for
the 28-DIP package.
Mode
Write
Read
Standby
Standby
(3)
2
Absolute Maximum Ratings
Applied Conditions
(1)
Storage Temperature Range (Ambient)
Operating Temperature Range (T
CASE
)
Positive Supply Voltage
Input Voltage
(2)
Output Voltage
(2)
Power Dissipation
(3)
Lead Temperature (Soldering 5 sec)
Electrostatic Discharge Sensitivity
(4)
Notes:
Minimum
-65°C
-55°C
-0.5 V
-0.5 V
-0.5 V
Maximum
+150°C
+125°C
+7.0 V
V
DD
+ 0.5 V
V
DD
+ 0.5 V
2.0 W
+250°C
(Class II)
1) Stresses above the absolute maximum rating may cause permanent
damage to the device. Extended operation at the maximum levels may
degrade performance and affect reliability. All voltages are with
reference to the module ground leads.
2) Maximum applied voltage shall not exceed +7.0 V.
3) Guaranteed by design; not tested.
4) Class as defined in MIL-STD-883, Method 3015.
Recommended Operating Conditions
Symbol
V
DD
GND
T
C
V
IL
V
IH
Parameters
(1)
Supply Voltage
Supply Voltage Reference
Case Temperature
Input Logic “Low” - CMOS
Input Logic “Low” - TTL
Input Logic “High” - CMOS
Input Logic “High” - TTL
Note:
Minimum
+4.5
0.0
-55
0.0
0.0
+3.5
+2.0
Maximum
+5.5
0.0
+125
+1.5
+0.8
V
DD
V
DD
Units
Volt
Volt
Celsius
Volt
Volt
1)All voltages referenced to GND.
Power Sequencing
The substrate of this module is connected directly to Ground.
Power shall be applied to the device only in the following
sequences to prevent damage due to excessive currents:
• Power-Up Sequence: GND, V
DD
, Inputs
• Power-Down Sequence: Inputs, V
DD
, GND
3
DC Electrical Characteristics
Limits
Minimum
Maximum
180
130
2.0
1.2
2.0
2.0
1.2
2.0
1.0
0.4
1.0
4.2
V
DD
- 0.5 V
0.4
0.05
2.5
3.5
2.0
1.5
0.8
-5
-10
5
10
4
Test
Symbol
Test Conditions
(1)
F = F
MAX
= 1/t
AVAV(min)
S = V
IL
= GND
E = V
IH
= V
DD
No Output Load
F = F
MAX
= 1/t
AVAV(min)
S = V
IH
= V
DD
E = V
IL
= GND
F = F
MAX
= 1/t
AVAV(min)
S = V
IH
= V
DD
E = V
IL
= GND
V
DD
= 2.5 V
I
OH
= -4 mA
I
OH
= -200 µA
I
OL
= 8 mA
I
OL
= 200 µA
V
DD
= V
DR
Device Type
X3X
X4X
X6X
X3X
X4X
X6X
X3X
X4X
X6X
X3X
X4X
X6X
All
All
All
CMOS
TTL
CMOS
TTL
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
µA
µA
pF
Supply Current
(Cycling Selected)
I
DD1
Supply Current
(Cycling De-Selected)
Supply Current
(Standby)
I
DD2
I
DD3
Data Retention Current
I
DR
High Level Output Voltage
Low Level Output Voltage
Data Retention Voltage
High Level Input Voltage
Low Level Input Voltage
Input Leakage
Output Leakage
C
in
V
OH
V
OL
V
DR
V
IH
V
IL
I
ILK
I
OLK
(2)
0 V
≤
V
IN
≤
5.5 V
0 V
≤
V
OUT
≤
5.5 V
By Design/
Verified By
Characterization
By Design/
Verified By
Characterization
All
All
All
C
out
(2)
All
7
pF
Note:
1) Typical operating conditions: V
DD
= 5.0V; TA = 25 °C, pre-radiation.
-55°C
≤
T
case
≤
+125°C; 4.5 V
≤
V
DD
≤
5.5 V; unless otherwise specified.
2) The worst case timing sequence of t
WLZQ
+ t
DUWH
+ t
WHWL
= t
AVAV
.
Output Load Circuit
300
Ω
± 10%
2.8V
50 pF + 10%
4
Read Cycle AC Timing Characteristics
(1)
Minimum or
Maximum
Minimum
Maximum
Minimum
Maximum
Minimum
Maximum
Maximum
Minimum
Maximum
Maximum
Minimum
Maximum
Worst Case By Speed
-30
-40
-60
30
30
5
30
3
CMOS - 10
TTL - 12
30
3
40
40
5
40
3
15
40
3
60
60
5
60
3
15
60
3
15
15
3
15
Test
Read Cycle Time
Address Access Time
Output Hold After Address Change
Chip Select Access Time
Chip Select to Output Active
Chip Select to Output Disable
Chip Enable Access Time
Chip Enable to Output Active
Chip Disable to Output Disable
Output Enable Access Time
Output Enable to Output Active
Output Enable to Output Disable
Symbol
t
AVAV
t
AVQV
t
AXQX
t
SLQV
t
SLQX
t
SHQZ
t
EHQV
t
EHQX
t
ELQZ
t
GLQV
t
GLQX
t
GHQZ
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CMOS - 10
15
TTL - 12
CMOS - 12 CMOS - 15
TTL - 18
TTL - 15
3
CMOS - 10
TTL - 12
3
15
Note:
1)Test conditions: input switching levels V
IL
/V
IH
= 0.5 V/V
DD
-0.5 V (CMOS), V
IL
/V
IH
= 0 V/3 V (TTL), input rise
and fall times < 5 ns, input and output timing reference levels shown in the Tester AC Timing Characteristics
table, capacitive output loading C
L
= 50 pF. For C
L
> 50 pF, derate access times by 0.02 ns/pF (typical).
-55 °C
≤
T
case
≤
+125°C; 4.5 V
≤
V
DD
≤
5.5 V; unless otherwise specified.
Read Cycle Timing Diagram
t
AVAV
Address
Valid Address
t
AVQV
t
SLQV
S
t
AXQX
t
SLQX
t
EHQV
E
t
SHQZ
t
EHQX
t
GLQV
G
t
ELQZ
t
GLQX
Data
Out
t
SHQZ
Valid Data
High Impedance
5
嵌入式系统
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