TLE2161BM JFET-Input Low Power High Drive Decompensated Single Operational Amplifier
参数名称 | 属性值 |
Input common mode headroom (to negative supply)(Typ)(V) | 3 |
Features | Decompensated |
Output swing headroom (to positive supply)(Typ)(V) | -0.3 |
Total supply voltage(Max)(+5V=5, +/-5V=10) | 36 |
Number of channels(#) | 1 |
Input common mode headroom (to positive supply)(Typ)(V) | 1 |
Iq per channel(Typ)(mA) | 0.29 |
Offset drift(Typ)(uV/C) | 6 |
Rating | Military |
Rail-to-rail | In to V+ |
Slew rate(Typ)(V/us) | 10 |
Output current(Typ)(mA) | 50 |
GBW(Typ)(MHz) | 6.4 |
Vn at 1 kHz(Typ)(nV/rtHz) | 40 |
CMRR(Typ)(dB) | 90 |
CMRR(Min)(dB) | 72 |
Package Group | CDIP|8 |
Input bias current(Max)(pA) | 60 |
Architecture | FET |
Iq per channel(Max)(mA) | 0.35 |
Operating temperature range(C) | -55 to 125 |
Output swing headroom (to negative supply)(Typ)(V) | 0.3 |
Vos (offset voltage @ 25 C)(Max)(mV) | 0.5 |
Total supply voltage(Min)(+5V=5, +/-5V=10) | 7 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved