1N60
1.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The CYT
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
=11.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60
1N60
Package
SOT-89-3
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.
www.szcyt.com
1N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulsed (Note 2)
Repetitive (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Avalanche Energy
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
1N60-A
1N60-B
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
T
J
T
OPR
T
STG
RATINGS
600
650
±30
1.2
1.2
4.8
50
4.0
4.5
1
+150
-55 ~ +150
-55 ~ +150
UNIT
V
V
V
A
A
A
mJ
mJ
V/ns
w
℃
℃
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.
www.szcyt.com
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
1N60-A
1N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
0.4
2.0
1N60
MIN TYP MAX UNIT
600
650
10
100
-100
V
μA
nA
nA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Breakdown Voltage Temperature
△BV
DSS
/
△
T
J
I
D
=250μA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
(Note 4,5)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=1.2A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note1)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
5. Essentially Independent of Operating Temperature
4.0
9.3 11.5
120 150
20
25
3.0 4.0
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
1.4
1.2
4.8
160
0.3
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.
www.szcyt.com
1N60
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.
www.szcyt.com
1N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.
www.szcyt.com
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