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1011LD200

产品描述RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 55QX-1, 2 PIN
产品类别分立半导体    晶体管   
文件大小270KB,共4页
制造商ADPOW
官网地址http://www.advancedpower.com/
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1011LD200概述

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 55QX-1, 2 PIN

1011LD200规格参数

参数名称属性值
包装说明FLANGE MOUNT, R-CDFM-F2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压75 V
FET 技术METAL-OXIDE SEMICONDUCTOR
最高频带L BAND
JESD-30 代码R-CDFM-F2
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

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1011LD200
200 Watts, 32 Volts
Pulsed Avionics 1030 to 1090 MHz
LDMOS FET
GENERAL DESCRIPTION
The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode
lateral MOSFET capable of providing 200 W
pk
of RF power from 1030 to 1090
MHz. The device is nitride passivated and utilizes gold metallization to ensure
highest MTTF. The transistor includes input prematch for broadband capability.
Low thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55QX-1
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P
d
)
Voltage and Current
Drain-Source (V
DSS
)
Gate-Source (V
GS
)
Temperatures
Storage Temperature
Operating Junction Temperature
700 W
75V
±
20V
-65 to +150°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
BV
dss
I
dss
I
gss
V
gs(th)
V
ds(on)
g
FS
θ
JC1
CHARACTERISTICS
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Thermal Resistance
TEST CONDITIONS
V
gs
= 0V, I
d
=20mA
V
ds
= 38V, V
gs
= 0V
V
gs
= 10V, V
ds
= 0V
V
ds
= 10V, I
d
= 40 mA
V
gs
= 10V, I
d
= 2A
V
ds
= 10V, I
d
= 2A
MIN
75
10
1
6
0.3
2
0.25
TYP
MAX
UNITS
V
µA
µA
V
V
S
ºC/W
3
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, I
dq
= 500mA
G
PS
Pd
η
d
ψ
NOTES:
Common Source Power Gain
Pulse Droop
Drain Efficiency
Load Mismatch
1. At rated output power and pulse conditions
Pulse width = 32
µs,
LTDC=2%
F=1030/1090 MHz, P
out
= 200W
F = 1030 MHz, P
out
=200W
F = 1090 MHz, P
out
= 200W
13
43
15
0.5
3:1
dB
dB
%
Rev. B - Apr 2004
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.

 
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