Ordering number : ENN7331
2SA2099 / 2SC5888
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2099 / 2SC5888
High-Current Switching Applications
Applications
•
Package Dimensions
unit : mm
2041A
[2SA2099 / 2SC5888]
10.0
3.2
4.5
2.8
Relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
18.1
16.0
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
3.5
7.2
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
Specifications
( ) : 2SA2099
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2.55
2.4
Ratings
(--50)60
(--)50
(--)6
(--)10
(--)13
(--)2
2
25
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
Ratings
min
typ
max
(--)10
(--)10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2502 TS IM TA-3711 No.7331-1/5
2SA2099 / 2SC5888
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(--)2V, IC=(-
-)1A
VCE=(--)5V, IC=(-
-)1A
VCB=(--)10V, f=1MHz
IC=(--)5A, IB=(-
-)250mA
IC=(--)5A, IB=(-
-)250mA
IC=(--)100µA, IE=0
IC=(--)1mA, RBE=∞
IE=(-
-)100µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(-
-50)60
(-
-)50
(--)6
(70)40
(650)1000
(60)80
Ratings
min
200
(130)200
90(60)
(--250)180 (--500)360
(--)0.93
(--)1.4
typ
max
(560)700
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
+
100µF
VBE= --5V
+
470µF
VCC=20V
RL
IC=20IB1= --20IB2=3A
(For PNP, the polarity is reversed.)
--10
--9
--8
IC -- VCE
2SA2099
--9
10
IC -- VCE
2SC5888
40mA
30mA
0
10
A
--
0m
mA
Collector Current, IC -- A
Collector Current, IC -- A
mA
--70mA
--60mA
--50mA
9
8
7
6
5
4
3
2
1
--8
0
--7
--6
--5
--4
--3
--2
--1
0
0
--40mA
--30mA
--20mA
20mA
10mA
--10mA
IB=0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IB=0
3.5
From top
100mA
90mA
80mA
70mA
60mA
50mA
4.0
4.5
5.0
IT04795
Collector-to-Emitter Voltage, VCE -- V
--5.0
--4.5
IT04794
5.0
4.5
IC -- VCE
--20mA
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
2SA2099
Collector Current, IC -- A
Collector Current, IC -- A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--1
--2
--3
--4
--5
--6
--7
--18mA
--16mA
--14mA
--12mA
mA
A 14
12
mA
10mA
8mA
6mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
--10mA
--8mA
--6mA
16m
4mA
--4mA
--2mA
IB=0
--8
--9
--10
2mA
0
0
1
2
3
4
5
6
IB=0
7
8
2SC5888
From top
20mA
18mA
9
10
IT04797
Collector-to-Emitter Voltage, VCE -- V
IT04796
Collector-to-Emitter Voltage, VCE -- V
No.7331-2/5
2SA2099 / 2SC5888
--12
IC -- VBE
2SA2099
VCE= --2V
Collector Current, IC -- A
12
IC -- VBE
2SC5888
VCE=2V
--10
10
Collector Current, IC -- A
--8
8
--6
6
--4
Ta=
75
°
C
25
°
C
--25
°
C
4
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT04798
0
0
0.2
0.4
0.6
Ta=
7
5
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
IT04799
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
hFE -- IC
2SA2099
VCE= --2V
DC Current Gain, hFE
Ta=75°C
25°C
--25
°C
7
5
Ta=75°C
25
°C
--25
°
C
2SC5888
VCE=2V
DC Current Gain, hFE
3
2
3
2
100
7
5
3
--0.01
100
7
5
0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
3
5 7 --10
IT04800
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
5 7 10
IT04801
f T -- IC
f T -- IC
2SC5888
VCE=5V
Gain-Bandwidth Product, f T -- MHz
2
Gain-Bandwidth Product, f T -- MHz
2SA2099
VCE= --5V
3
2
100
7
5
100
7
5
3
2
3
2
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
1000
7
7 --10
IT04802
5
10
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Cob -- VCB
Collector Current, IC -- A
1000
7
7 10
IT04803
5
Cob -- VCB
2SA2099
f=1MHz
Output Capacitance, Cob -- pF
2SC5888
f=1MHz
Output Capacitance, Cob -- pF
5
3
2
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 --100
IT04804
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 100
IT04805
No.7331-3/5
2SA2099 / 2SC5888
--1000
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2099
IC / IB=20
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
0.01
2
3
VCE(sat) -- IC
2SC5888
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
--100
7
5
3
2
--10
=
Ta
5
°
C
C
--2
25
°
°
C
75
C
5
°
=7
Ta
5
°
C
5
°
C
--2
2
7
5
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
3
2
5 7 --10
IT04806
5 7 0.1
2
3
5 7 1.0
2
3
VCE(sat) -- IC
Collector Current, IC -- A
1000
5 7 10
IT04807
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2099
IC / IB=50
7
5
3
2
2SC5888
IC / IB=50
--1000
7
5
3
2
--100
7
5
3
2
--10
--0.01
100
7
5
3
2
=7
Ta
°
C
--25
5
°
C
25
°
C
=7
Ta
C
5
°
C
5
°
--2
°
C
25
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
3
5 7 --10
IT04808
10
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
VBE(sat) -- IC
Collector Current, IC -- A
3
5 7 10
IT04809
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
2SA2099
IC / IB=20
2SC5888
IC / IB=20
2
--1000
Ta= --25
°
C
75
°
C
--1000
Ta= --25
°
C
7
7
75
°
C
25
°C
5
25
°C
5
3
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
5 7 --10
IT04810
3
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
ASO
Collector Current, IC -- A
2.5
5 7 --10
IT04811
PC -- Ta
ICP=13A
IC=10A
≤10µs
Collector Dissipation, PC -- W
50µs
s
0
µ
10
0
µ
s
50
ms
1
Collector Current, IC -- A
2.0
10
0m
s
10
ms
DC
op
1.5
No
he
era
tio
n
Tc=25°C
Single Pulse
(For PNP, minus sign is omitted.)
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
at
sin
k
1.0
0.5
0.01
0.1
0
0
20
40
60
80
100
120
140
160
IT05371
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
IT05372
No.7331-4/5
2SA2099 / 2SC5888
30
PC -- Tc
Collector Dissipation, PC -- W
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT05373
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2002. Specifications and information herein are subject
to change without notice.
PS No.7331-5/5
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