ISO
LINK
6
OLI 249
Radiation Tolerant
Phototransistor
Optocoupler
For Hybrid Assembly
.100"±.01"
5
4
Minimum Bonding pad size
.005"X .010", 6 places
6
CATHODE
5
BASE
4
EMITTER
Device color
code*
ANODE
COLLECTOR
1
2
3
Max.
.065"
.110"±.01"
.030"
±.006"
Color Code - BLACK
1
3
SCHEMATIC
PACKAGE OUTLINE
Features
♦
Current transfer ratio guaranteed over
♦
♦
Small foot print for hybrid device
♦
More Radiation tolerant than 4N49
4
♦
High current transfer ratio at low input
♦
♦
CTR comparable to darlington output
♦
♦
Custom package available
Call Factory
4
-55
°
C to +100
°
C ambient temp. range
1500 Vdc electrical isolation
Description
The OLI 249 is designed especially for hybrid
application requiring optical isolation with high current
transfer ratio and low saturation Vce. Each OLI 249
consists of a light emitting diode and a NPN silicon
phototransistor mounted and coupled in a miniature
custom ceramic package. The very low input current
makes the OLI 249 well suited for direct CMOS to
LSTTL / TTL interfaces. Electrical parameters are
similar to the JEDEC registered 4N49 optocoupler
but with much better CTR degradation characteristics
due to radiation exposure.
Device mounting is achieved by standard
hybrid assembly with non-conductive epoxies. Gold
or aluminum wire bonding can be used to make
electrical connections for maximum placement
flexibility .
Special electrical parametric selections are
available on request.
current - 200% at I
F
=2mA over
temperature
High reliability and rugged construction
but with low saturation V
CE
= 0.15v typ.
Similar to 4N4X type optocouplers
NOTES:
1. Measured between pins 1 and 6 shorted together and pins 2,3,4,and 5 shorted together. T
A
= 25°C and duration = 1 second.
2. Derate linearly at 3.0 mW /
°C
above 25
°C
3. Value applies for Pw
≤
1
µS,
PRR
≤
300 pps.
4. Contact factory for more information
Absolute Maximum Ratings
Coupled
Input to Output Isolation Voltage
1
Storage Temperature Range
Operation Temperature Range
Mounting Temperature Range ( 3 minutes max. )
Input Diode
Average Input Current
Peak Forward Current (≤ 1mS duration )
Reverse Voltage
Power Dissipation
Output Detector
Collector - Emitter Voltage
Emitter - Collector Voltage
Collector - Base Voltage
Power Dissipation
±
1500 Vdc
-65°C to +150°C
-55°C to +125°C
240°C
40 mA
60 mA
3.0 V
70 mW
40 V
7V
45 V
200 mW
3
ELECTRICAL CHARACTERISTIC
( T
A
= 25
°C,
Unless Otherwise Specified )
Parameter
On-State Collector Current
Symbol
I
C (ON)
Min
2.0
2.8
2.0
30
Max
12
Units
mA
mA
mA
µA
Test Conditions
I
F
= 1 mA, V
CE
= 5.0V
I
F
= 2 mA, V
CE
= 5.0V, T
A
= -55°C
I
F
= 2 mA, V
CE
= 5.0V, T
A
= 100°C
I
F
= 10 mA, V
CB
= 5.0V
I
F
= 2mA, I
C
=2.0mA
Fig. Note
2,3
On-State Coll.-Base Current
Saturation Voltage
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Off-State Leakage Current
Collector to Emitter
Collector to Base
Input Forward Voltage
I
CB(ON)
V
CE(SAT)
0.3
V
B
VCEO
B
VCBO
B
VEBO
I
CE(OFF)
I
CB(OFF)
V
F
40
45
7
100
100
10
1.8
1.4
1.2
2.2
1.8
1.6
100
10
11
5
25
25
V
V
V
nA
µA
nA
V
V
V
µA
Ω
pF
µS
µS
I
CE
= 1 mA
I
CB
= 100
µA
I
EB
= 100
µA
V
CE
= 20V
V
CE
= 20V, T
A
=100
°C
V
CB
= 20V
I
F
= 10mA, T
A
= -55°C
I
F
= 10mA
I
F
= 10mA, T
A
= 100°C
V
R
= 2.0V
V
I-O
=
±1000Vdc
V
I-O
= 0V, f = 1 MHz
V
CC
= 10V, RL = 100
Ω
I
F
= 5mA
4
1
1
1
1
1
Input Reverse Current
Input to Output Resistance
Input to Output Capacitance
Rise Time
Fall Time
I
R
r
I-O
c
I-O
tr
tf
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