Shenzhen SI Semiconductors Co., LTD.
Product Specification
MJE
/MJE SERIES TRANSISTORS
RoHS
MJE13003BR H
WIDE SOA
FEATURES
HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
■
RoHS COMPLIANT
APPLICATION:
FLUORESCENT LAMP
ELECTRONIC BALLAST
Tc=25°C
°
Absolute Maximum Ratings Tc=25°C
°
PARAMETER
-
Collector-Base Voltage
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
TO-126/TO-126S
VALUE
600
400
9
1.0
20
150
-65-150
UNIT
V
V
V
A
W
°C
°C
Tc=25°C
°
Electronic Characteristics
CHARACTERISTICS
-
Collector-Base Cutoff Current
-
Collector-Emitter Cutoff Current
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
-
Collector-Emitter Saturation
Voltage
-
Base-Emitter Saturation Voltage
Tc=25°C
°
SYMBOL
I
CBO
I
CEO
V
CEO
V
EBO
Vcesat
I
C
=0.75A,I
B
=0.25A
Vbesat
I
C
=0.2A,I
B
=0.04A
V
CE
=5V,I
C
=1mA
7
10
5
1.4
2.4
µs
1.0
40
0.5
1.2
V
TEST CONDITION
V
CB
=600V
V
CE
=400V,I
B
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
I
C
=0.20A,I
B
=0.04A
400
9
0.3
V
MIN
MAX
100
250
UNIT
µA
µA
V
V
DC Current Gain
h
FE
V
CE
=10V,I
C
=0.1A
V
CE
=5V,I
C
=1A
Storage Time
Falling Time
t
S
t
f
V
CC
=5V,I
C
=0.25A,
(UI9600)
1
Si semiconductors
2011.05
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