2SK3538
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3538
Switching Regulator, DC-DC Converter Applications
·
·
·
·
Low drain-source ON resistance: R
DS (ON)
= 75 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 7.0 S (typ.)
Low leakage current: I
DSS
=
100
µA (V
DS
= 500 V)
Enhancement-mode: V
th
= 2.0 to 4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
(Note 3)
Channel temperature
Storage temperature range
E
AR
T
ch
T
stg
Rating
500
500
±30
8
32
65
312
8
6.5
150
-55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
JEDEC
JEITA
TOSHIBA
―
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
4
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.92
Unit
°C/W
1
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
8.3 mH, I
AR
=
8 A, R
G
=
25
W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
1
2003-02-14
2SK3538
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V,
I
D
=
8 A
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
GS
10 V
0V
50
W
I
D
=
4 A
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
G
= ±10 mA,
V
DS
=
0 V
V
DS
=
500 V, V
S
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
4 A
V
DS
=
10 V, I
D
=
4 A
Min
¾
±30
¾
500
2.0
¾
3.5
¾
¾
¾
¾
V
OUT
¾
¾
¾
¾
¾
¾
45
40
140
30
17
13
¾
pF
¾
¾
¾
¾
¾
nC
Typ.
¾
¾
¾
¾
¾
0.75
7.0
1300
130
400
26
Max
±10
¾
100
¾
4.0
0.85
¾
¾
¾
¾
¾
pF
Unit
mA
V
mA
V
V
W
S
V
DD
≈
200 V
Duty
≤
1%, t
w
=
10
ms
Source-Drain Diode Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
¾
¾
I
DR
=
8 A, V
GS
=
0 V
I
DR
=
8 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/ms
Min
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
1200
10
Max
8
32
-1.7
¾
¾
Unit
A
A
V
ns
mC
Marking
※
Lot Number
K3538
※
Type
Month
Year
(starting from alphabet A)
(last number of the christian era)
R
L
=
50
W
2
2003-02-14
2SK3538
I
D
– V
DS
10
Common source
Tc
=
25°C
Pulse test
6
15
10
20
5.25
5
16
I
D
– V
DS
6
10
5.5
15
12
5
8
Common source
Tc
=
25°C
Pulse test
8
(A)
I
D
6
4.75
Drain current
4
4.5
4.25
VGS
=
4 V
Drain current
I
D
(A)
2
4
4.5
VGS
=
4 V
0
0
2
4
6
8
10
0
0
10
20
30
40
50
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
20
Common source
VDS
=
20 V
Pulse test
10
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse test
16
(V)
8
(A)
I
D
Drain-source voltage
12
V
DS
6
Drain current
ID
=
8 A
8
Tc
= -55°C
4
100
0
0
2
4
25
4
4
2
2
0
0
6
8
10
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
ïY
fs
ï
– I
D
(S)
30
Common source
Pulse test
10
100
5
3
25
Tc
= -55°C
VDS
=
20 V
3
Common source
Tc
=
25°C
Pulse test
1
R
DS (ON)
– I
D
ïY
fs
ï
Forward transfer admittance
Drain-source on resistance
R
DS (ON)
(W)
0.5
0.3
VGS
=
10, 15 V
1
0.1
0.5
0.3
1
3
10
30
0.05
0.3
1
3
10
30
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2003-02-14
2SK3538
R
DS (ON)
– Tc
(W)
5
Common source
30
Common source
Tc
=
25°C
I
DR
– V
DS
R
DS (ON)
(A)
Drain reverse current I
DR
4
VGS
=
10 V
Pulse test
10 Pulse test
Drain-source on resistance
3
3
2
4
1
ID
=
8 A
1
2
10
0.3
5
3
1
VGS
=
0,
-1
V
-0.8
-1.0
-1.2
0
-80
-40
0
40
80
120
160
0.1
0
-0.2
-0.4
-0.6
Case temperature Tc
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
5000
3000
5
V
th
– Tc
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
Gate threshold voltage V
th
(V)
4
1000
Ciss
(pF)
500
300
Coss
3
Capacitance C
100
50
Common source
30 V
GS
=
0 V
f
=
1 MHz
Tc = 25°C
10
0.1
1
2
Crss
1
10
100
0
-80
-40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc
(°C)
P
D
-
Tc
100
Common source
VDS
=
10 A
500
Dynamic input/output characteristics
Common source
ID
=
8 A
Tc
=
25°C
Pulse test
20
(W)
(V)
80
ID
=
1 mA
Pulse test
400
16
Drain-power dissipation P
D
V
DS
Drain-source voltage
200
200
400
8
40
20
100
VGS
4
0
0
25
50
75
100
125
150
0
0
10
20
30
40
0
50
Case temperature Tc
(°C)
Total gate charge Q
g
(nC)
4
2003-02-14
Gate-source voltage
60
300
VDD = 100 V
12
V
GS
(V)
VDS
2SK3538
r
th
– t
w
3
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
1
Duty
=
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single pulse
T
Duty
=
t/T
Rth (ch-c)
=
1.92°C/W
100
m
1m
10 m
100 m
1
10
0.03
0.003
10
m
Pulse width
t
w
(S)
Safe operating area
100
ID max (pulsed)*
100
ms*
500
E
AS
– T
ch
(mJ)
Avalanche energy EAS
1 ms*
400
10
ID max (continuous)
300
(A)
ID
200
Drain current
1
DC operation
Tc
=
25°C
100
0
25
0.1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated linearly
with increase in temperature.
0.01
1
10
VDSS max
100
1000
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
-15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Ε
AS
=
æ
ö
1
B VDSS
÷
×
L
×
I
2
× ç
ç
B
2
VDSS
-
VDD
÷
è
ø
Drain-source voltage
V
DS
(V)
Test circuit
R
G
=
25
W
V
DD
=
90 V, L
=
8.3 mH
5
2003-02-14
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