Ordering number : ENN3450B
2SK1447LS
N-Channel Silicon MOSFET
2SK1447LS
Ultrahigh-Speed Switching Applications
Features
•
•
•
Package Dimensions
unit : mm
2078C
[2SK1447LS]
10.0
3.2
3.5
7.2
Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Ratings
450
±30
9
36
2.0
40
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0
VDS=450V, VGS=0
VGS=±30V, VDS=0
Ratings
min
450
1.0
±100
typ
max
Unit
V
mA
nA
(Note) Be careful in handling the 2SK1447LS because it has no protection diode between gate and source.
Marking : K1447
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO) No.3450-1/4
2SK1447LS
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
ID=6A, VGS=10V, VDD=200V, RGS=50Ω
ID=6A, VGS=10V, VDD=200V, RGS=50Ω
ID=6A, VGS=10V, VDD=200V, RGS=50Ω
ID=6A, VGS=10V, VDD=200V, RGS=50Ω
IS=9A, VGS=0
Ratings
min
2.0
4.0
8.0
0.47
1600
220
80
25
60
250
80
1.8
0.6
typ
max
3.0
Unit
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
Switching Time Test Circuit
VDD
200V
PW=1µs
D.C.≤0.5%
VGS
10V
ID=6A
RL=33.3Ω
D
VOUT
G
S
P.G
RGS
50Ω
2SK1447LS
24
ID -- VDS
V
0.0
20
ID -- VGS
Tc= --2
5
°
C
VDS=10V
25
°C
20
6.0
V
5.5V
Drain Current, ID -- A
16
Drain Current, ID -- A
16
=1
GS
V
75
°
C
12
5.0V
12
4.5V
8
8
4.0V
4
4
3.5V
0
0
4
8
12
16
20
24
ITR01430
5
0
0
2
4
6
8
10
12
14
Drain-to-Source Voltage, VDS -- V
28
ID -- Tc
Gate-to-Source Voltage, VGS -- V
ITR01431
VGS(off) -- Tc
24
VDS=10V
VGS=10V
Cutoff Voltage, VGS(off) -- V
VDS=10V
ID=1mA
4
Drain Current, ID -- A
20
16
3
12
2
8
1
4
0
--60
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
--40
--20
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
ITR01432
Case Temperature, Tc --
°C
ITR01433
No.3450-2/4
2SK1447LS
1.0
0.9
0.8
0.7
RDS(on) -- VGS
Tc=25
°C
1.2
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
1.0
0.8
ID=3A
0.6
0.5
0.4
0.3
0.2
0
2
4
12A
6A
0.6
0.4
0V
=1
S
V
V G
=20
A,
S
=6
VG
ID
A,
=6
ID
0.2
6
8
10
12
14
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
2
ITR01434
5
y
fs
-- ID
Case Temperature, Tc --
°C
ITR01435
SW Time -- ID
td(off)
Forward Transfer Admittance,
y
fs -- S
VDS=10V
7
5
3
2
Switching Time, SW Time -- ns
10
C
25
°
3
2
VDD=200V P.W.=1µs
VGS=10V D.C.≤0.5%
=
Tc
--2
C
5
°
75
°
C
10
7
5
tf
tr
1.0
7
5
3
2
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
3
2
td(on)
1.0
5
7
1.0
2
3
5
7
10
2
3
5
3
2
Ciss, Coss, Crss -- VDS
VGS=0
f=1MHz
Ciss
Drain Current, ID -- A
ITR01436
100
7
5
3
2
Drain Current, ID -- A
ITR01437
ASO
IDP=36A
10
10
<1µs
µ
s
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
0
4
8
12
16
20
24
28
32
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
ID=9A
1m
m
DC
100m
s
s
op
era
Operation in this
tio
n
area is limited by RDS(on).
10
0
µ
s
s
Coss
Crss
Tc=25
°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
5
7 1000
Drain-to-Source Voltage, VDS -- V
2.4
ITR01438
50
PD -- Ta
Drain-to-Source Voltage, VDS -- V
ITR01439
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
Allowable Power Dissipation, PD -- W
40
1.6
No
1.2
he
30
at
s
in
k
20
0.8
0.4
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR01440
Case Temperature, Tc --
°C
ITR01441
No.3450-3/4
2SK1447LS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS No.3450-4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
