Power Transistors
2SD2659
Silicon NPN triple diffusion planar type
Unit: mm
For power switching
■
Features
•
High forward current transfer ratio h
FE
•
Satisfactory linearity of forward current transfer ratio h
FE
•
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9
±0.3
3.0
±0.5
4.6
±0.2
2.9
±0.2
13.7
±0.2
4.2
±0.2
Solder Dip
15.0
±0.5
φ
3.2
±0.1
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
j
T
stg
T
C
=
25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
60
6
3
6
20
2
150
−55
to
+150
°C
°C
Unit
V
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
V
V
A
A
W
B
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
E
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4.0 V, I
C
=
0.5 A
I
C
=
2.0 A, I
B
=
0.05 A
V
CE
=
12 V, I
C
=
0.2 A, f
=
10 MHz
50
500
Min
60
100
100
100
1 500
1.2
Typ
Max
Unit
V
µA
µA
µA
V
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00292AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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