Transistors
2SD2216L
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462L
3
2
0.80
±0.05
Unit: mm
0.020
±0.010
■
Features
•
High forward current transfer ratio h
FE
•
Mold lead-less type package, allowing downsizing and thinning
of the equipment and automatic insertion through the tape packing.
4
1.00
±0.05
1
0.60
±0.05
0.30
±0.03
0.20
±0.03
4
1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
7
100
200
150
125
−55
to
+125
Unit
V
V
V
mA
mA
mW
°C
°C
3
0.60
2
0.05
±0.03
1 : Base
2 : Emitter
3 : Collector
4 : Collector
ML4-N1 Package
Marking Symbol: L
Note) *: Printed circuit board: Copper foil area of 20.0 mm
2
or more, and
the board thickness of 1.6 mm for the collector portion
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 2 V, I
C
= 100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
180
90
0.1
80
3.5
0.3
V
MHz
pF
Min
60
50
7
0.1
100
390
Typ
Max
Unit
V
V
V
µA
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.50
■
Absolute Maximum Ratings
T
a
=
25°C
0.05
±0.03
Publication date: February 2003
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1
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•
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