PD - 9.1436B
PRELIMINARY
l
l
l
l
l
IRF7314
HEXFET
®
Power MOSFET
8
7
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
1
D1
D1
D2
D2
2
V
DSS
= -20V
3
6
4
5
R
DS(on)
= 0.058Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Maximum
-20
± 12
-5.3
-4.3
-21
-2.5
2.0
1.3
150
-2.9
0.20
-5.0
-55 to + 150
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
11/18/97
IRF7314
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
0.031 ––– V/°C Reference to 25°C, I
D
= -1mA
0.049 0.058
V
GS
= -4.5V, I
D
= -2.9A
Ω
0.082 0.098
V
GS
= -2.7V, I
D
= -1.5A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
5.9 –––
S
V
DS
= -10V, I
D
= -1.5A
––– -1.0
V
DS
= -16V, V
GS
= 0V
µA
––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 55°C
––– 100
V
GS
= -12V
nA
––– -100
V
GS
= 12V
19
29
I
D
= -2.9A
4.0 6.1
nC
V
DS
= -16V
7.7
12
V
GS
= -4.5V, See Fig. 10
15
22
V
DD
= -10V
40
60
I
D
= -2.9A
ns
42
63
R
G
= 6.0Ω
49
73
R
D
= 3.4Ω
780 –––
V
GS
= 0V
470 –––
pF
V
DS
= -15V
240 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
-2.5
A
-21
V
ns
nC
––– -0.78 -1.0
––– 47
71
––– 49
73
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.9A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
≤
-2.9A, di/dt
≤
-77A/µs, V
DD
≤
V
(BR)DSS
,
SD
T
J
≤
150°C
Starting T
J
= 25°C, L = 35mH
R
G
= 25Ω, I
AS
= -2.9A.
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
IRF7314
100
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
TOP
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
TOP
10
10
-1.50V
1
1
-1.50V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
-I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
T
J
= 25
°
C
1
1
1.5
V DS = -10V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
IRF7314
R
DS(on
)
, Drain-to-Source On Resistance (
Ω
)
2.0
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= -2.9A
0.8
1.5
0.6
V
G S
= -2.7V
1.0
0.4
0.5
0.2
V
G S
= -4.5V
0.0
0
4
8
12
16
20
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= -4.5V
100 120
140 160
A
A
T
J
, Junction T em perature (°C )
-I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS(on)
, Drain-to-Source On Resistance (
Ω
)
0.08
400
E
AS
, Single Pulse Avalanche Energy (mJ)
0.07
ID
-1.3A
-2.3A
BOTTOM -2.9A
TOP
300
0.06
200
I
D
= -5.3A
0.05
100
0.04
0.03
0.0
2.0
4.0
6.0
8.0
A
0
25
50
75
100
125
150
V
G S
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
IRF7314
1400
1200
-V
G S
, Gate-to-Source Voltage (V)
V
GS
C
is s
C
rs s
C
oss
=
=
=
=
0V ,
f = 1M H z
C
gs
+ C
gd
, C
ds
S H O R TE D
C
gd
C
ds
+ C
gd
10
I
D
= -2.9A
V
D S
= -16V
8
C , C apacitanc e (pF )
1000
C
is s
C
oss
800
6
600
4
400
C
rs s
2
200
0
1
10
100
A
0
0
5
10
15
20
25
30
A
-V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
