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2SC5295J

产品描述For 2 GHz Band Low-Noise Amplification
产品类别分立半导体    晶体管   
文件大小60KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
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2SC5295J概述

For 2 GHz Band Low-Noise Amplification

2SC5295J规格参数

参数名称属性值
零件包装代码SC-89
包装说明SMALL OUTLINE, R-PDSO-F3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性LOW NOISE
最大集电极电流 (IC)0.065 A
基于收集器的最大容量1 pF
集电极-发射极最大电压10 V
配置SINGLE
最高频带L BAND
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)8500 MHz
Base Number Matches1

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Transistors
2SC5295J
Silicon NPN epitaxial planar type
1.60
+0.05
–0.03
1.00
±0.05
0.80
±0.05
For 2 GHz band low-noise amplification
Features
High transition frequency f
T
Low collector output capacitance (Common base, input open cir-
cuited) C
ob
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Unit: mm
0.12
+0.03
–0.01
3
1.60
±0.05
0.85
+0.05
–0.03
1
0.27
±0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
15
10
2
65
125
125
−55
to
+125
Unit
V
V
V
mA
mW
°C
°C
0.70
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 3S
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
S
21e
2
G
UM
NF
Conditions
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
7
50
7.0
8.5
0.6
9
10
2.2
3.0
1.0
Min
Typ
Max
1
1
170
Unit
µA
µA
GHz
pF
dB
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
50 to 120
R
100 to 170
0.10 max.
(0.375)
Publication date: December 2002
SJC00283BED
1

 
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