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2SB1462J

产品描述For general amplification
产品类别分立半导体    晶体管   
文件大小61KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
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2SB1462J概述

For general amplification

2SB1462J规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SC-89
包装说明SMALL OUTLINE, R-PDSO-F3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)160
JESD-30 代码R-PDSO-F3
JESD-609代码e6
湿度敏感等级1
元件数量1
端子数量3
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)0.125 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Bismuth (Sn/Bi)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
Base Number Matches1

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Transistors
2SB1462J
Silicon PNP epitaxial planar type
1.60
+0.05
–0.03
0.80
±0.05
Unit: mm
0.12
+0.03
–0.01
For general amplification
Complementary to 2SD2216J
Features
High forward current transfer ratio h
FE
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1.00
±0.05
3
1.60
±0.05
0.85
+0.05
–0.03
1
0.27
±0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
Absolute Maximum Ratings
T
a
=
25°C
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
−60
−50
−7
−100
−200
125
125
−55
to
+125
V
V
V
mA
mA
mW
°C
°C
0.10 max.
Parameter
Symbol
Rating
Unit
0.70
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: A
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −100 µA,
I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
E
=
0
V
CE
= −10
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
180
0.3
80
2.7
Min
−60
−50
−7
0.1
−100
390
0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(0.375)
Publication date: January 2003
SJC00087BED
1

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