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IL352

产品描述Transistor Output Optocoupler, 1-Element, 3000V Isolation, PCMCIA, 8 PIN PKG
产品类别光电子/LED    光电   
文件大小70KB,共3页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
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IL352概述

Transistor Output Optocoupler, 1-Element, 3000V Isolation, PCMCIA, 8 PIN PKG

IL352规格参数

参数名称属性值
是否Rohs认证不符合
包装说明PCMCIA, 8 PIN PKG
Reach Compliance Codecompliant
Coll-Emtr Bkdn Voltage-Min30 V
配置SINGLE
标称电流传输比100%
最大暗电源50 nA
最大正向电流0.06 A
最大绝缘电压3000 V
JESD-609代码e0
元件数量1
最高工作温度85 °C
最低工作温度-40 °C
光电设备类型TRANSISTOR OUTPUT OPTOCOUPLER
端子面层Tin/Lead (Sn/Pb)
Base Number Matches1

文档预览

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IL352
Phototransistor Optocoupler
Preliminary
FEATURES
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 1768 V
RMS
• High Collector-Emitter Voltage,
V
CEO
=30 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS*
DESCRIPTION
The IL352 is an optically coupled isolator that
features a high current transfer ratio, low coupling
capacitance and high isolation voltage. It has a
GaAs infrared emitting diode emitter, which is
optically coupled to a silicon planar phototransis-
tor detector. The component is housed in a thin
line package.
The coupling device is designed for signal trans-
mission between two electrically separated cir-
cuits. The potential difference between the
circuits to be coupled must not exceed the maxi-
mum permissible reference voltages.
Maximum Ratings
Emitter
Reverse Voltage ...........................................6.0 V
DC Forward Current ..................................60 mA
Total Power Dissipation ............................50 mW
Derate Linearly from 25
°
C.................0.66 mW/
°
C
Detector
Collector-Emitter Voltage ..............................70 V
Emitter-Base Voltage ...................................7.0 V
Collector Current .......................................50 mA
Collector Current (t
1.0 ms) ....................100 mA
Total Power Dissipation ...........................150 mW
Derate Linearly from 25
°
C...................2.5 mW/
°
C
Package
Isolation Test Voltage (between emitter
and detector referred to climate
DIN 40046, part 2, Nov. 74)
t=1.0 sec......................................... 3000 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ............................
10
12
V
IO
=500 V,
T
A
=100
°
C ..........................
10
11
Storage Temperature Range .....–40
°
C to +150
°
C
Ambient Temperature Range ......–40
°
C to +85
°
C
Junction Temperature................................. 100
°
C
Soldering Temperature
(max 10 s, Dip Soldering Distance
to Seating Plane
1.5 mm) ..................... 260
°
C
*TR
ansparent
IO
n
S
hield
Dimensions in Inches (mm)
Pins
6&7
N.C 1
A 2
K 3
N.C 4
.230 (5.84)
.224 (5.69)
.017 (.43)
.013 (.33)
.047 (1.19)
.037 (.94)
.091 (2.3)
.083 (2.1)
.040 (1.02)
.036 (.91)
.050
(1.27)
Typ.
.016
(.41)
Typ.
.006
(.15)
10°
Typ.
All 8 sides
8 B
7
C
6
5 E
.301 (7.65)
.281 (7.14)
.224 (5.7) .346 (8.79)
.216 (5.5) .326 (8.3)
40°
3°–7°
Characteristics
T
A
=25
°
C
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
Leakage
BV
CEO
BV
ECO
30
7.0
5.0
50
nA
V
Sym.
Min.
Typ.
1.3
0.1
25
Max.
1.5
10
Units
V
µ
A
pF
Condition
V
F
I
R
C
O
I
F
=10 mA
V
R
=6.0 V
V
R
=0
f=1.0 MHz
I
C
=1.0 mA
I
E
=100
µ
A
I
CEO
V
CE
=10 V
I
F
=0
T
A
=25
°
C
V
CE
=30 V
I
F
=0
T
A
=85
°
C
I
C
=100
µ
A
V
CE
=0
500
µ
A
Collector to Base
Capacitance
Collector-Emitter
BV
CBO
70
6.0
V
pF
C
CE
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
1
April 29, 1999

 
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