Power Transistors
2SA0963
(2SA963)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2209
120°
Unit: mm
7.5
+0.5
–0.1
2.9
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
■
Features
1.9
±0.1
2.3
±0.2
3.8
±0.3
11.0
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Note) *: T
C
=
25°C
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
e/
Emitter-base cutoff current (Collector open)
na
nc
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
80 to 160
R
120 to 220
Publication date: February 2003
tin
ue
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
Rating
−50
−40
−5
−3
10
Unit
V
V
0.75
±0.1
0.5
±0.1
•
Large collector power dissipation P
C
•
Output of 4 W to 5 W can be obtained by a complementary pair with
2SC2209
16.0
±1.0
4.6
±0.2
0.5
±0.1
1.26
±0.1
V
2.3
±0.2
−1.5
A
1
2
3
A
1: Emitter
2: Collector
3: Base
TO-126A-A1 Package
W
150
°C
T
stg
−55
to
+150
°C
Conditions
Min
−50
−40
Typ
Max
3.05
±0.1
Unit
V
I
C
=
−1
mA, I
E
= 0
I
C
=
−2
mA, I
B
= 0
V
sc
on
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
−1
µA
µA
V
V
−100
−10
220
µA
Di
V
CE
= −5
V, I
C
= −1
A
80
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
C
= −1.5
A, I
B
= −
0.15 A
I
C
= −2
A, I
B
= −
0.2 A
−1.0
ain
−1.5
te
V
CB
= −5
V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
−5
V, I
E
= 0, f = 1 MHz
150
70
MHz
pF
M
Note) The part number in the parenthesis shows conventional part number.
SJD00006BED
1
2SA0963
P
C
T
a
12
−4.0
−3.5
10
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
T
C
=
25°C
I
B
= −40
mA
−35
mA
−30
mA
−25
mA
−20
mA
−2.0
−1.5
−15
mA
V
CE(sat)
I
C
−10
I
C
/ I
B
=
10
Collector power dissipation P
C
(W)
8
Collector current I
C
(A)
−3.0
−2.5
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
6
4
−10
mA
−5
mA
−
1.0
−
0.5
0
T
C
=
100°C
−25°C
−
0.1
25°C
2
0
0
40
80
120
160
200
Ambient temperature T
a
(°C)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
−10
I
C
/ I
B
=
10
−1
T
C
= −25°C
100°C
25°C
−
0.1
−
0.01
−
0.01
−
0.1
−1
Collector current I
C
(A)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
e/
140
120
100
80
60
40
20
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
na
nc
I
E
=
0
f
=
1 MHz
T
C
=
25°C
0
−1
−10
−100
Collector-base voltage V
CB
(V)
2
tin
ue
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
E
1 000
V
CE
= −5
V
25°C
240
Forward current transfer ratio h
FE
T
C
=
100°C
Transition frequency f
T
(MHz)
200
V
CB
= −5
V
f
=
200 MHz
T
C
=
25°C
100
−25°C
160
120
10
80
40
1
−
0.01
−
0.1
−1
0
0.01
0.1
1
10
Collector current I
C
(A)
Emitter current I
E
(A)
sc
on
V
CER
R
BE
I
CEO
T
a
Di
−60
T
C
=
25°C
1 000
V
CE
= −12
V
−50
te
M
−30
−20
I
CEO
(T
a
)
I
CEO
(T
a
=
25°C)
−40
100
ain
10
−10
0
0.001
1
0.01
0.1
1
10
0
20
40
60
80
100
120
Base-emitter resistance R
BE
(kΩ)
Ambient temperature T
a
(°C)
SJD00006BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
tin
ue
Pl
pla d in
ea
ne clu
se
pla m d de
vis
ht
ne ai ma s fo
tp it f
:// ol d d d nte inte llow
ww lo is is na n
wi co co nc an ing
w. n n n e c
se g U tin tin t e fou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
M
ain
te
na
nc
M
Di ain
sc te
on na
tin nc
ue e/
d
e/
Di
sc
on
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
