2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
Application
High voltage medium speed switching
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA778(K), 2SA778A(K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SA778(K)
–150
–150
–5
–50
200
150
–55 to +150
2SA778A(K)
–180
–180
–5
–50
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA778(K)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Collector cutoff current
Symbol
V
(BR)CBO
V
(BR)CER
I
CBO
Min
Typ
Max
—
—
–1.0
—
–1.0
—
–1.0
2SA778A(K)
Min
Typ
Max
—
—
—
–1.0
–1.0
200
–1.0
V
V
pF
MHz
ns
µs
µs
Unit
V
V
µA
µA
µA
Test conditions
I
C
= –50
µA,
I
E
= 0
I
C
= –50
µA,
R
BE
= 30 kΩ
V
CB
= –100 V, I
E
= 0
V
CB
= –150 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –3 V,
I
E
= –15 mA
I
C
= –15 mA,
I
B
= –1 mA
I
C
= –15 mA,
I
B
= –1 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –3 V,
I
C
= –15 mA
V
CC
= –10.3 V
I
C
= 10 I
B1
= –10
I
B2
= –10 mA
V
CC
= –10 V,
I
C
=–17 mA
I
B1
= –1mA,
I
B2
= –12 mA
–150 —
–150 —
—
—
—
—
—
100
–0.3
–180 —
–180 —
—
—
—
40
—
—
—
—
—
—
—
—
—
—
100
–0.3
Emitter cutoff current
I
EBO
—
30
—
—
—
—
—
—
—
DC current transfer ratio h
FE
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Collector output
capacitance
V
CE(sat)
V
BE(sat)
Cob
–0.77 –1.0
—
50
135
1.7
—
10
—
—
—
1.0
–0.77 –1.0
—
50
135
1.7
—
10
—
—
—
1.0
Gain bandwidth product f
T
Turn on time
Turn off time
Storage time
t
on
t
off
t
stg
2
2SA778(K), 2SA778A(K)
Switching Time Test Circuit
Switching Time Test Circuit
t
on
, t
off
Test Circuit
D.U.T.
6k
6k
0.002
0.002
CRT
1k
P.G.
t
r
, t
f
≤
5ns
PW
≥
5µs
duty ratio = 50%
t
stg
Test Circuit
510
D.U.T
0.1
2.4 k
50
–
–3 V
50
+ +
50
–
0.002
0.002
0.1
CRT
16
P.G.
t
r
, t
f
≤
15ns
PW
≤
5µs
duty ratio
≤
10%
50
+
6V
50
– +
50
–
–10.3 V
Unit R :
Ω
C :
µF
`
–10 V
Unit R :
Ω
C :
µF
Response Waveform
Response Waveform
90%
t
stg
10%
t
d
t
on
90%
t
off
0
Input
–13 V
0
Output
10%
+7 V
Input
0
0
Output
10%
90%
10%
10%
t
stg
3
2SA778(K), 2SA778A(K)
Typical Output Characteristics (1)
Maximum Collector Dissipation Curve
Collector power dissipation Pc (mW)
300
Collector Current I
C
(mA)
–40
–50
–0.9
–0.8
–0.7
–1
.0
P
C
=
–0.6
–0.5
20
0
m
W
–0.4
–30
200
–0.3
–0.2
–0.15
–0.1
–20
100
–10
–0.05 mA
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
–1
–2
–3
–4
–5
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
–0.5
Collector Current I
CBO
(nA)
Collector Current I
C
(mA)
–300
Collector Cutoff Current vs.
Collector to Base Voltage
125
–0.4
–4
–100
100
–0.3
–3
–30
75
–10
–3
–1.0
–0.3
50
–0.2
–2
–0.1
–1
µ
A
I
B
= 0
Ta =
25
°
C
0
–40
–80
–120 –160 –200
Collector to Emitter Voltage V
CE
(V)
0
–40 –80 –120 –160 –200
Collector to Base Voltage V
CB
(V)
4
2SA778(K), 2SA778A(K)
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –3 V
75
50
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
–2.0
I
C
= 10 I
B
140
DC current transfer ratio h
FE
120
–1.6
100
25
–1.2
0
80
Ta =
–25
°
C
–0.8
60
–0.4
40
–1
–2
–5
–10
–20
Collector Current I
C
(mA)
–50
0
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
Collector Current I
C
(mA)
–50
Collector output capacitance C
ob
(pF)
Emitter input capacitance C
ib
(pF)
Base to Emitter Saturation Voltage vs.
Collector Current
–0.9
Base to emitter saturation voltage
V
BE (sat)
(V)
I
C
= 10 I
B
–25
0
Input and Output Capacitance vs.
Voltage
12
10
8
6
C
ob
(I
E
= 0)
4
2
0
–0.5 –1.0 –2
–5 –10 –20
–50
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
C
ib
(I
C
= 0)
f = 1 MHz
–0.8
–0.7
25
50
5
°
C
=7
–0.6
Ta
–0.5
–0.4
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
Collector Current I
C
(mA)
–50
5
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