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IS27DV256-12W

产品描述OTP ROM, 32KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
产品类别存储    存储   
文件大小497KB,共12页
制造商Integrated Silicon Solution ( ISSI )
下载文档 详细参数 选型对比 全文预览

IS27DV256-12W概述

OTP ROM, 32KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

IS27DV256-12W规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码DIP
包装说明0.600 INCH, PLASTIC, DIP-28
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间120 ns
其他特性ALSO WORKS WITH 5V VCC
I/O 类型COMMON
JESD-30 代码R-PDIP-T28
JESD-609代码e0
长度36.576 mm
内存密度262144 bit
内存集成电路类型OTP ROM
内存宽度8
功能数量1
端子数量28
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP28,.6
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3.3/5 V
编程电压12.5 V
认证状态Not Qualified
座面最大高度4.699 mm
最大待机电流0.00002 A
最大压摆率0.015 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15.24 mm
Base Number Matches1

IS27DV256-12W相似产品对比

IS27DV256-12W IS27DV256-90T IS27DV256-90W IS27DV256-90PL IS27DV256-12T IS27DV256-15T IS27DV256-12PL IS27DV256-15PL IS27DV256-15W
描述 OTP ROM, 32KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 OTP ROM, 32KX8, 90ns, CMOS, PDSO28, TSOP-28 OTP ROM, 32KX8, 90ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 OTP ROM, 32KX8, 90ns, CMOS, PQCC32, PLASTIC, LCC-32 OTP ROM, 32KX8, 120ns, CMOS, PDSO28, TSOP-28 OTP ROM, 32KX8, 150ns, CMOS, PDSO28, TSOP-28 OTP ROM, 32KX8, 120ns, CMOS, PQCC32, PLASTIC, LCC-32 OTP ROM, 32KX8, 150ns, CMOS, PQCC32, PLASTIC, LCC-32 OTP ROM, 32KX8, 150ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 DIP TSOP DIP QFJ TSOP TSOP QFJ QFJ DIP
包装说明 0.600 INCH, PLASTIC, DIP-28 TSOP-28 0.600 INCH, PLASTIC, DIP-28 PLASTIC, LCC-32 TSOP-28 TSOP-28 PLASTIC, LCC-32 PLASTIC, LCC-32 0.600 INCH, PLASTIC, DIP-28
针数 28 28 28 32 28 28 32 32 28
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 120 ns 90 ns 90 ns 90 ns 120 ns 150 ns 120 ns 150 ns 150 ns
其他特性 ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC ALSO WORKS WITH 5V VCC
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDIP-T28 R-PDSO-G28 R-PDIP-T28 R-PQCC-J32 R-PDSO-G28 R-PDSO-G28 R-PQCC-J32 R-PQCC-J32 R-PDIP-T28
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 36.576 mm 11.8 mm 36.576 mm 13.97 mm 11.8 mm 11.8 mm 13.97 mm 13.97 mm 36.576 mm
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bi 262144 bi
内存集成电路类型 OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
内存宽度 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1
端子数量 28 28 28 32 28 28 32 32 28
字数 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000 32000 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP TSOP1 DIP QCCJ TSOP1 TSOP1 QCCJ QCCJ DIP
封装等效代码 DIP28,.6 TSSOP28,.53,22 DIP28,.6 LDCC32,.5X.6 TSSOP28,.53,22 TSSOP28,.53,22 LDCC32,.5X.6 LDCC32,.5X.6 DIP28,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE, THIN PROFILE IN-LINE CHIP CARRIER SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE CHIP CARRIER CHIP CARRIER IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3/5 V 3.3/5 V 3.3/5 V 3.3/5 V 3.3/5 V 3.3/5 V 3.3/5 V 3.3/5 V 3.3/5 V
编程电压 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 4.699 mm 1.2 mm 4.699 mm 3.55 mm 1.2 mm 1.2 mm 3.55 mm 3.55 mm 4.699 mm
最大待机电流 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A 0.00002 A
最大压摆率 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA 0.015 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO YES NO YES YES YES YES YES NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE GULL WING THROUGH-HOLE J BEND GULL WING GULL WING J BEND J BEND THROUGH-HOLE
端子节距 2.54 mm 0.55 mm 2.54 mm 1.27 mm 0.55 mm 0.55 mm 1.27 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL QUAD DUAL DUAL QUAD QUAD DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 15.24 mm 8 mm 15.24 mm 11.43 mm 8 mm 8 mm 11.43 mm 11.43 mm 15.24 mm
厂商名称 Integrated Silicon Solution ( ISSI ) - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )

 
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