Packaged PIN Diodes
RoHS Compliant
Features
♦
♦
♦
♦
♦
♦
♦
High Power
Fast Speed
Voltage Ratings to 1500 Volts
Wide Selection of Carrier Lifetimes
Wide Selection of Capacitances
Assortment of Packages Styles
Available Screened for Military Applications
Rev V.7
Maximum Power Dissipation
P
diss
=
30,31,32,36,43,94,111,120,150,255 T (max Operating)-25°C
Thermal Resistance
258,296,1072,1079
Leaded Packages
@+25°C
186, 276,1088
Surface Mount Package
+25°C
1056
P
diss
= 250mW
Cathode Heatsink Packages
Description and Applications
M/A-COM's broad line of packaged PIN diodes
encompasses a comprehensive range of electrical
characteristics and package outlines. This diverse union
of semiconductor technology and chip packaging gives
considerable flexibility to the circuit designer. The fast
switching series of packaged PIN diodes utilize a thin
I-region and silicon oxide or glass passivated chips
which provide for low leakage currents and low insertion
loss. Using in process control monitors to regulate wafer
fabrication parameters these devices achieve consistent
performance in control circuit applications. The high
voltage product line of packaged PIN diodes employs
M/A-COM's unique CERMACHIP
®
passivation
process
which provides for a hard glass encapsulation that
hermetically seals the active area of the chip. These
®
packaged CERMACHIP PIN diodes are ideally suited
for use in high power applications where high RF
voltages are present. The diode chips are bonded into
sealed ceramic packages that are designed for the most
stringent electrical and environmental conditions. A wide
choice of packages are available which can be mounted
into a variety of microwave and RF circuit media. The
Packaged PIN Diodes series are designed to have a
high inherent reliability and may be ordered screened to
meet many MIL-STD reliability levels.
P
diss
= 300mW
Co-Axial Packages
31,32,94
36
30, 296
120,255
Surface Mount Packages
276
1088
1056
186
1072,1079, 10720
Threaded Packages
Absolute Maximum Ratings
1
Parameter
Voltage
Operating Temperature
Storage Temperature
Operating and Storage
(Case Style 1088)
Absolution Max.
As Specified in Table
- 65°C to +175°C
- 65°C to +200°C
- 65°C to +125°C
150
111
43
258
Unpackaged Die
1. Operation beyond any one of the above conditions may
cause permanent damage to the device.
Specifications subject to change without prior notification.
131,132.134 , 212
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
volume is not guaranteed.
information contained herein without notice.
Packaged PIN Diodes
RoHS Compliant
35V to 250V Fast Switching PIN Diodes Specifications (T
AMB
= +25°C)
Minimum
Reverse
1
Voltage
@ I
R
<10μA
Volts
100
100
200
250
( Unless otherwise
specified )
(
Unless otherwise
Rev V.7
specified )
Part Number
Maximum
Capacitance
C
T
@ -10V
f = 1MHz
pF
0.25
0.35
0.35
0.40
2
Maximum
Series Res.
R
S
@ 10mA
f = 500MHz
Ω
2.50
1.50
1.50
0.60
3
Maximum
Thermal
Resistance
Nominal Characteristics
Carrier
4
Lifetime
nS
60
100
200
1000
I-Region
Width
Microns
µM
12
12
20
30
T
RR
5
MA4P202-120
MA4P203-30
MA4P303-32
MA4P404-30
Notes:
1.
2.
3.
4.
5.
°C/W
60
30
30
20
nS
5
20
60
100
The minimum specified V
R
(Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA
At V
R
= -50V
R
s
measured at I
F
= +50mA, f = 100MHz.
Nominal carrier life time specified with diode biased at I
F
= +10mA , I
REV
= -6mA
Nominal T
RR
(reverse recovery time) specified with diode biased at I
F
= +20mA , I
REV
= -200mA.
Alternative Packages
Chip
30
31,32, 94
111
120, 255
186
276
1088
1072
134,132
1056
Package dimensions can be found on the M/A-COM website at
http://www.macom.com/TechApps/OutlineDrawings.asp
35V to 500V MELF General Purpose Switching Diodes Specifications (T
AMB
= +25°C)
Minimum
Reverse
2
Voltage
I
R
<10μA
Volts
35
200
200
200
200
500
(Unless
otherwise
specified)
Part Number
1
Maximum
Capacitance
C
T
@10V
f = 1MHz
pF
1.2
0.5
1.5
0.5
0.8
1.7
Maximum
Series Res.
R
S
@10mA
f = 100MHz
Ω
0.5
3.0
0.6@50mA
6.0
25.0
0.25@100mA
CW Power
Dissipation
Rating
Nominal Characteristics
Typical
I
F
When
R
S
= 75Ω
mA
—
—
—
0.30-0.60
1.20-2.40
—
Carrier
3
Lifetime
μS
0.3
1.5
3.0
2.0
6.0
3.0
I-Region
Width
mils
0.4
2.0
3.0
4.0
14.0
50.0
MA4PH235-1072T
MA4PH236-1072T
MA4PH237-1079T
MA4PH238-1072T
MA4PH239-1079T
MADP-000234-10720T
Watts
1.0
1.0
2.0
1.0
2.0
3.0
Notes:
1. Only available in case styles indicated.
2. The minimum specified V
R
(Reverse Voltage) is sourced and the resultant reverse
leakage current, Ir, is measured to be <10μA.
3. Nominal carrier life time specified with diode biased at I
F
= +10mA , I
REV
= -6mA
Case Styles 1072, 10720, 1079
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
volume is not guaranteed.
information contained herein without notice.
Packaged PIN Diodes
RoHS Compliant
500V PIN Diodes Specifications (T
AMB
= +25°C)
Minimum
Reverse
1
Voltage
I
R
<10μA
Volts
MA4P504-30
MADP000015-000030
MA4P506-30
Notes:
1. The minimum specified V
R
(Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA.
2. Nominal carrier life time specified with diode biased at I
F
= +10mA , I
REV
= -6mA
3. To order this part in a package other than 30, use the prefix MA4P505 followed by a dash and the desired package style. Check
for available packages in the
Package Availability Table
on page 7 of the datasheet.
3
Rev V.7
Part Number
Maximum
Capacitance
C
T
@100V
f = 1 MHz
pF
0.40
0.55
0.90
Maximum
Series
Resistance
R
S
@100mA
f = 100 MHz
Ω
0.60
0.45
0.30
CW Power
Dissipation
Rating
Nominal Characteristics
Carrier
2
Lifetime
μS
1.0
2.0
3.0
I-Region
Width
mils
2
2
2
Watts
20
15
10
500
500
500
Alternative Packages
Consult the Package Availability Table in the “Ordering Information” section (pg. 7) for options
30
31
36
111
120,255
186
258
131,132
Package dimensions can be found on the M/A-COM website at
http://www.macom.com/TechApps/OutlineDrawings.asp
500V MELF PIN Diode Specifications (T
AMB
= +25°C)
Minimum
Reverse
1
Voltage
I
R
<10μA
Volts
MA4P504-1072T
MA4P505-1072T
MA4P506-1072T
Notes:
1. The minimum specified V
R
(Reverse Voltage) is sourced and the resultant reverse
leakage current, Ir, is measured to be <10μA.
2. Nominal carrier life time specified with diode biased at I
F
= +10mA , I
REV
= -6mA
Specifications subject to change without prior notification.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
volume is not guaranteed.
Part Number
Maximum
Capacitance
C
T
@100V
f = 1 MHz
pF
0.5
0.65
1.0
Maximum
Series
Resistance
R
S
@100mA
f = 100 MHz
Ω
0.60
0.45
0.30
CW Power
Dissipation
Rating
Nominal Characteristics
Carrier
2
Lifetime
μS
1.0
2.0
3.0
I-Region
Width
mils
2
2
2
Watts
1.5
1.5
1.5
500
500
500
1072 Package
information contained herein without notice.
Packaged PIN Diodes
RoHS Compliant
1000V CERMACHIP PIN Diodes Specification (T
AMB
= +25°C)
Minimum
Reverse
Voltage
1
I
R
<10μA
Volts
MA4P604-30
MA4P606-30
MA4P607-43
1000
1000
1000
Maximum
Capacitance
C
T
@100V
f = 1MHz
pF
0.50
0.80
2.00
Maximum
Series
Resistance
R
s
@100mA
f = 100MHz
Ω
1.00
0.70
0.40
CW Power
Dissipation
Rating
Nominal Characteristics
Carrier
Lifetime
2
μS
3.0
4.0
5.0
I-Region
Width
Mils
4
4
4
Rev V.7
Part Number
Watts
20
10
7
Notes:
1. The maximum specified V
R
(reverse voltage) is sourced and the resultant reverse leakage
current, Ir, is measured to be <10μA
2. Nominal carrier life time specified with diode biased at I
F
= +10mA , I
REV
= -6mA
Optional Packages
Consult table in “Ordering Information” section (pg. 7) for availability
30, 296
36
43
111
131, 212
255
258
Package dimensions can be found on the M/A-COM website at
http://www.macom.com/TechApps/OutlineDrawings.asp
1500V CERMACHIP PIN Diode
Specifications (T
AMB
= +25°C)
Minimum
Reverse
Voltage
1
I
R
<10μA
Volts
MA4P709-150
1500
Maximum
Capacitance
Ct @100V
f = 1MHz
pF
3.30
Maximum Series
Resistance
R
s
@200mA
f = 100MHz
Ω
0.25
Maximum
Thermal
Resistance
Nominal Characteristics
Carrier
Lifetime
2
μS
10.0
I-Region
Width
mils
7
Part Number
°C/W
2
Notes:
1. The minimum specified V
R
(reverse voltage) is sourced and the resultant reverse
leakage current, Ir, is measured to be <10μA
2. Nominal carrier life time specified with diode biased at I
F
= +10mA , I
REV
= -6mA
Specifications subject to change without prior notification.
150
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
volume is not guaranteed.
information contained herein without notice.
Packaged PIN Diodes
RoHS Compliant
Forward Current vs. Series Resistance
MA4P202, MA4P203, MA4P303 and MA4P404
100MHz
Rev V.7
Forward Current vs. Series Resistance
MA4P504, MA4P505 and MA4P506
100MHz
Series Resistance R
s
(Ω)
Forward Current (I
F
)
Forward Current vs. Series Resistance
MA4P604, MA4P606 and MA4P607
100MHz
Series Resistance R
s
(Ω)
Forward Current (I
F
)
Forward Current vs. Series Resistance
MA4P709
100MHz
Series Resistance R
s
(Ω)
Series Resistance R
s
(Ω)
Forward Current (I
F
)
Forward Current (I
F
)
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
volume is not guaranteed.
information contained herein without notice.
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
