电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SMB850-1100-04

产品描述4.8mm, 1 ELEMENT, INFRARED LED, 850nm, 5 X 5 MM, ROHS COMPLIANT PACKAGE-6
产品类别光电子/LED    光电   
文件大小211KB,共6页
制造商Epitex Inc
官网地址http://www.epitex.com
下载文档 详细参数 全文预览

SMB850-1100-04概述

4.8mm, 1 ELEMENT, INFRARED LED, 850nm, 5 X 5 MM, ROHS COMPLIANT PACKAGE-6

SMB850-1100-04规格参数

参数名称属性值
厂商名称Epitex Inc
包装说明5 X 5 MM, ROHS COMPLIANT PACKAGE-6
Reach Compliance Codeunknown
配置SINGLE
最大正向电流1 A
功能数量1
最高工作温度85 °C
最低工作温度-40 °C
光电设备类型INFRARED LED
标称输出功率430 mW
峰值波长850 nm
形状ROUND
尺寸4.8 mm
Base Number Matches1

文档预览

下载PDF文档
epitex

Opto-Device & Custom LED
High Power Top LED SMB850-1100-04
Lead ( Pb ) Free Product – RoHS Compliant
SMB850-1100-04
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2)
Package Resin
(3)
Lens
High Power Top LED
SMB850-1100-04 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package.
These devices are available to be operated and 1500mW/sr at IFP=3A.
Outer
dimension (Unit: mm)
High Power Top LED
SMB850-1100-04
AlGaAs
1000um*1000um
1pce
850nm typ.
Silver Plated on Copper
PPA Resin
Epoxy or Silicone Resin
c1 c2 c3
anode
cathode
land pattern for solder
a1 a2 a3
a1 a2 a3
heatsink
c1 c2 c3
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
2500
1000
3000
5
10
100
-40 ~ +85
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition Minimum
V
F
I
F
=1000mA
Forward Voltage
V
FP
I
FP
=3A
I
F
=1000mA
Radiated Power
P
O
I
FP
=3A
I
F
=1000mA
Radiant Intensity
I
E
I
FP
=3A
Peak Wavelength
P
I
F
=1000mA
840
Half Width

I
F
=1000mA
Viewing Half Angle


I
F
=100mA
Rise Time
tr
I
F
=1000mA
Fall Time
tf
I
F
=1000mA
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.8
2.4
430
1200
540
1500
850
43
±18
25
30
Maximum
2.4
860
Unit
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
ns
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2373  2076  292  591  1305  20  19  56  31  1 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved