1N5624GP thru 1N5627GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
3.0 A
200 V to 800 V
125 A
5.0 µA
0.95 V
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
DO-201AD
Features
• Superectifier structure for High Reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
* Maximum repetitive peak reverse voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375” (9.5 mm) lead length at T
A
= 70 °C
* Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375” (9.5 mm) lead length at T
A
= 70 °C
* Operating junction and storage temperature range
Symbol
V
RRM
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
1N5624GP
200
200
1N5625GP
400
400
3.0
125
200
- 65 to + 175
1N5626GP
600
600
1N5627GP
800
800
Unit
V
V
A
A
µA
°C
Document Number 88524
14-Oct-05
www.vishay.com
1
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
* Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Test condition
at 3.0 A
(1)
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 150 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
t
rr
C
J
Symbol
V
F
I
R
300
3.0
40
1N5624GP
1N5625GP
1N5626GP
1N5627GP
Unit
V
µA
200
µs
pF
1.0
0.95
5.0
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
* JEDEC registered values
Symbol
R
θJA
1N5624GP
1N5625GP
20
1N5626GP
1N5627GP
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
4.0
200
Average Forward Rectified Current (A)
Average Forward Current (A)
60 Hz
Resistive or
Inductive Load
3.0
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
2.0
1.0
0.375” (9.5 mm) Lead Length
0
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88524
14-Oct-05
1N5624GP thru 1N5627GP
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
T
J
= 25 °C
1
Pulse
Width
= 300
µs
1% Duty Cycle
0.1
0.6
Junction Capacitance (pF)
10
1.3
0.7
0.8
0.9
1.0
1.1
1.2
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
Instantaneous Reverse Current (µA)
T
J
= 125 °C
1
T
J
= 75 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88524
14-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
MEMS传感器
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