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1N6270-E3/65

产品描述Trans Voltage Suppressor Diode, 1500W, 7.37V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN
产品类别分立半导体    二极管   
文件大小170KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

1N6270-E3/65概述

Trans Voltage Suppressor Diode, 1500W, 7.37V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN

1N6270-E3/65规格参数

参数名称属性值
是否Rohs认证符合
包装说明O-PALF-W2
针数2
制造商包装代码CASE 1.5KE
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性EXCELLENT CLAMPING CAPABILITY
最大击穿电压10 V
最小击穿电压8.19 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT APPLICABLE
极性UNIDIRECTIONAL
最大功率耗散6.5 W
认证状态Not Qualified
最大重复峰值反向电压7.37 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT APPLICABLE
Base Number Matches1

文档预览

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1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
TRANSZORB Transient Voltage Suppressors
Major Ratings and Characteristics
V
(BR)
Unidirectional
V
(BR)
Bidirectional
P
PPM
P
M(AV)
I
FSM
(Unidirectional only)
T
j
max.
6.8 V to 540 V
6.8 v to 440 V
1500 W
6.5 W
200 A
175 °C
Case Style 1.5KE
Features
• Glass passivated chip junction
• Available in Unidrectional and Bidirectional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020C
• AEC-Q101 qualified
Mechanical Data
Case:
Molded plastic body over passivated junction
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity:
For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
Telecommunication
Devices for bidirection Applications
For bidirectional types, use C or CA suffix for types
(e.g. 1.5KE440CA).
Electrical characteristics apply in both directions.
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000
µs
waveform
(1) (Fig. 1)
Peak pulse current with a 10/1000
µs
waveform
(1)
Steady state power dissipation lead lengths 0.375“ (9.5 mm)
(2)
,
T
L
= 75 °C
Peak forward surge current 8.3 ms single half sine-wave unidirectional
only
(3)
Maximum instantaneous forward voltage at 100 A for unidirectional only
(4)
Operating junction and storage temperature range
V
F
T
J
, T
STG
3.5/5.0
- 55 to + 175
V
°C
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
Limit
1500
See Next Table
6.5
200
Unit
W
A
W
A
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) V
F
= 3.5 V for 1.5KE220(A) & below; V
F
= 5.0 V for 1.5KE250(A) & above
Document Number 88301
03-Mar-05
www.vishay.com
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