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JANTX2N2369AUB

产品描述Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
产品类别分立半导体    晶体管   
文件大小235KB,共2页
制造商Semicoa
官网地址http://www.snscorp.com/Semicoa.htm
标准
下载文档 详细参数 选型对比 全文预览

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JANTX2N2369AUB概述

Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3

JANTX2N2369AUB规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码SOT
包装说明SMALL OUTLINE, R-CDSO-N3
针数3
Reach Compliance Codecompliant
Factory Lead Time24 weeks
集电极-发射极最大电压15 V
配置SINGLE
最小直流电流增益 (hFE)20
JESD-30 代码R-CDSO-N3
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)1.4 W
认证状态Qualified
参考标准MIL-19500/317
表面贴装YES
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
2N2369AUB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2369AUBJ)
JANTX level (2N2369AUBJX)
JANTXV level (2N2369AUBJV)
JANS level (2N2369AUBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Applications
High-speed switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0005
Reference document:
MIL-PRF-19500/317
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, T
A
= 25°C
Derate linearly above 70°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
P
T
T
C
= 25°C unless otherwise specified
Rating
15
40
4.5
0.4
3.08
325
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mW
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com

JANTX2N2369AUB相似产品对比

JANTX2N2369AUB JAN2N2369AUB JANS2N2369AUB JANTXV2N2369AUB
描述 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
零件包装代码 SOT SOT SOT SOT
包装说明 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3
针数 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
集电极-发射极最大电压 15 V 15 V 15 V 15 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 20 20 20 20
JESD-30 代码 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 200 °C 200 °C 200 °C 200 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN
最大功率耗散 (Abs) 1.4 W 1.4 W 1.4 W 1.4 W
认证状态 Qualified Qualified Qualified Qualified
参考标准 MIL-19500/317 MIL-19500/317 MIL-19500/317 MIL-19500/317
表面贴装 YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
是否Rohs认证 符合 符合 - 符合
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED

 
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