S
PACE
E
LECTRONICS
I
NC
.
S
PACE
P
RODUCTS
128K
X
8-
BIT
EEPROM
28C010TRP
V
CC
V
CC
A15
RES
WE
A13
A8
A9
32
1
RDY/BUSY
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
RES
OE
CE
WE
RES
A0
A6
High Voltage
Generator
I/O0
I/O7
RDY/Busy
I/O Buffer and
Input Latch
Control Logic Timing
SEi
28C010TRP
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
17
Y Decoder
Address
Buffer and
Latch
Y Gating
A7
A16
X Decoder
Memory Array
Memory
16
V
SS
Data Latch
F
EATURES
:
• 128k x 8-bit EEPROM
• Total dose hardness: 50 - 250 krad (Si), dependent upon orbit
• Single event effects:
- No Latchup > 120 MeV/mg/cm
2
- SEU > 90MeV/mg/cm
2
read mode
• Package:
- 32-pin R
AD
-P
AK
® flat pack/DIP package
- JEDEC-approved byte-wide pinout
• High speed:
- 120,150, 175, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data retention
• Page write mode:
- 1 to 128 bytes
• Automatic programming
- 10 ms automatic page/byte write
• Low power dissipation
- 20mW/MHz active (typical)
- 110uW standby (maximum)
D
ESCRIPTION
:
Space Electronics’ 28C010TRP (RP for
R
AD
-P
AK
®
) high- density 1 mega-
bit EEPROM microcircuit features a typical 100 kilorad (Si) total dose tol-
erance. The 28C010TRP is capable of in-system electrical Byte and Page
programmability. It has a 128-Byte Page Programming function to make
its erase and write operations faster. It also features Data Polling and a
Ready/Busy signal to indicate the completion of erase and programming
operations. In the 28C010TRP, hardware data protection is provided with
the RES pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is implemented
using the JEDEC optional standard algorithm. The 28C010TRP is designed
for high-reliability in the most demanding space applications. The pat-
ented radiation-hardened
R
AD
-P
AK
®
technology incorporates radiation
shielding in the microcircuit package. It provides a 100 Krad (Si) total
dose survivability. It is offered with packaging and screening up to Class S.
Note:
The recommended form of data protection during power on/off is to hold the
RES pin to V
SS
during power up and power down. This may be accompanied by
connecting the RES pin to the CPU reset line. Failure to provide adequate protec-
tion during power on/off may result in lost or modified data.
0316.00Rev7
All data sheets are subject to change without notice
1
(858) 452-4167 - Fax: (858) 452-5499 - www.spaceelectronics.com
©2000 Space Electronics Inc.
All rights reserved.
28C010TRP
T
ABLE
1. 28C010TRP P
INOUT
D
ESCRIPTION
P
IN
N
AME
A0-A16
OE
CE
WE
V
CC
V
SS
RDY/BUSY
RES
F
UNCTION
Address
Output Enable
Chip Enable
Write Enable
Power Supply
Ground
Ready/Busy
Reset
128K
X
8-B
IT
EEPROM
T
ABLE
2. 28C010TRP A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage (Relative to V
SS
)
Input Voltage (Relative to V
SS
)
Operating Temperature Range
Storage Temperature Range
1. V
IN
min = -3.0V for pulse width < 50ns.
SYMBOL
MIN
MAX
UNITS
Memory
V
CC
V
IN
T
OPR
T
STG
-0.6
-0.5
1
-55
-65
+7.0
+7.0
+125
+150
V
V
o
C
o
C
T
ABLE
3. 28C010TRP R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
S
YMBOL
V
CC
V
IL
V
IH
V
H
Operating Temperature Range
T
OPR
M
IN
4.5
-0.3
2.2
V
CC
-0.5
-55
M
AX
5.5
0.8
V
CC
+0.3
V
CC
+1
+125
o
C
U
NITS
V
V
T
ABLE
4. 28C010TRP C
APACITANCE
(T
A
= 25
o
C, f = 1 MHZ,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Capacitance: V
IN
= 0V
1
Output Capacitance: V
OUT
= 0V
1
1. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
M
AX
6
12
U
NITS
pF
pF
0316.00Rev7
All data sheets are subject to change without notice
2
©2000 Space Electronics Inc.
All rights reserved.
28C010TRP
(V
CC
= 5V ± 10%, T
A
= -55
TO
+125
o
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Standby V
CC
Current
Operating V
CC
Current
Input Voltage
T
EST
C
ONDITION
(V
CC
= 5.5V, V
IN
= 5.5V)
(V
CC
= 5.5V, V
OUT
= 5.5V/0.4V)
CE = V
CC
CE = V
IH
I
OUT
= 0mA, Duty = 100%, Cycle = 1µs at V
CC
= 5.5V
I
OUT
= 0mA, Duty = 100%, Cycle = 150ns at V
CC
= 5.5V
V
IL
V
IH 3
V
H 4
Output Voltage
I
OL
= 2.1 mA
I
OH
= -0.4 mA
1. I
LI
on RES = 100 uA max.
2. V
IL
min = -1.0V for pulse width < 50ns.
3. Except RES pin.
4. RES pin.
V
OL
V
OH
S
YMBOL
I
IL
I
LO
I
CC1
I
CC2
I
CC3
128K
X
8-B
IT
EEPROM
T
ABLE
5. 28C010TRP DC E
LECTRICAL
C
HARACTERISTICS
M
IN
-2
-2
--
--
--
--
-0.3
2
2.2
V
CC
-0.5
--
2.4
M
AX
2
1
2
20
1
15
50
0.8
V
CC
+ 0.3
V
CC
+ 1
0.4
--
V
V
U
NITS
µA
µA
µA
mA
mA
Memory
T
ABLE
6. 28C010TRP AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
o
C)
P
ARAMETER
Address Access Time
CE = OE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
Chip Enable Access Time
OE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
Output Enable Access Time
CE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
S
YMBOL
t
ACC
--
--
--
--
t
CE
--
--
--
--
t
OE
0
0
0
0
--
--
--
--
75
75
90
100
--
--
--
--
120
150
175
200
ns
--
--
--
--
120
150
175
200
ns
M
IN
T
YP
M
AX
U
NITS
ns
0316.00Rev7
All data sheets are subject to change without notice
3
©2000 Space Electronics Inc.
All rights reserved.
28C010TRP
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
o
C)
P
ARAMETER
Output Hold to Address Change
CE = OE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
CE = OE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
RES to Output Delay
CE = OE = V
IL
, WE = V
IH
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
S
YMBOL
t
OH
0
0
0
0
t
DF
0
0
0
0
t
DFR
0
0
0
0
t
RR
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
M
IN
128K
X
8-B
IT
EEPROM
T
ABLE
6. 28C010TRP AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
T
YP
M
AX
U
NITS
ns
--
--
--
--
ns
50
50
55
60
300
350
400
450
ns
300
350
450
550
--
--
--
--
Memory
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for
measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
T
ABLE
7. 28C010TRP AC E
LECTRICAL
C
HARACTERISTICS FOR
B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
o
C)
P
ARAMETER
Address Setup Time
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
Chip Enable to Write Setup Time (WE controlled)
28C010TRP-120
28C010TRP-150
28C010TRP-175
28C010TRP-200
S
YMBOL
t
AS
0
0
0
0
t
CS
0
0
0
0
--
--
--
--
--
--
--
--
ns
--
--
--
--
--
--
--
--
M
IN 1
T
YP
M
AX
U
NITS
ns
0316.00Rev7
All data sheets are subject to change without notice
4
©2000 Space Electronics Inc.
All rights reserved.
以拆会友
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
