2SC4965
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
12
8
3
100
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Symbol
V
(BR)CBO
I
CBO
I
CEO
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Collector output capacitance
On resistance
Note: Marking is “YV–”.
I
EBO
h
FE
V
CE(sat)
Cob
Ron
Min
12
—
—
—
100
—
—
—
Typ
—
—
—
—
250
150
1.9
1.2
Max
—
10
1
10
600
300
1.6
—
mV
pF
Ω
Unit
V
µA
mA
µA
Test conditions
I
C
= 10 µA, I
E
= 0
V
CB
= 10 V, I
E
= 0
V
CE
= 8 V, R
BE
=
∞
V
EB
= 3 V, I
C
= 0
V
CE
= 5 V, I
C
= 5 mA
I
C
= 80 mA, I
B
= 5 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
I
B
= 2.5 mA, f = 1 kHz
See characteristic curves of 2SC4964.
2
2SC4965
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any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
3
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