Datasheet> 器件分类 > 分立半导体> 晶体管> CMLT5551HCTR

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CMLT5551HCTR: 产品描述Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6; 产品类别分立半导体晶体管; 文件大小507KB，共2页; 制造商Central Semiconductor

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CMLT5551HCTR概述

Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6

CMLT5551HCTR规格参数

参数名称	属性值
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	160 V
配置	SINGLE
最小直流电流增益 (hFE)	30
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	1
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

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CMLT5551HC

SURFACE MOUNT

HIGH CURRENT

SILICON NPN TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5551HC type

is a high current NPN silicon transistor, manufactured

by the epitaxial planar process and epoxy molded in

an SOT-563 suface mount package. This PICOmini™

device has been designed for high voltage and high

current amplifier applications.

MARKING CODE: C51

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25 C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

180

160

6.0

1.0

350

-65 to +150

357

UNITS

C/W

ELECTRICAL CHARACTERISTICS:

(TA=25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

VCB=120V

VCB=120V, TA=100°C

VEB=4.0V

IC=100µA

IC=1.0mA

IE=10µA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA,

IC=50mA,

IB=1.0mA

IB=5.0mA

100

180

160

6.0

0.15

0.20

1.00

250

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=50mA

VCE=10V, IC=1.0A

VCE=10V,

VCB=10V,

IC=10mA, f=100MHz

IE=0, f=1.0MHz

MHz

R1 (20-January 2010)

CMLT5551HCTR相似产品对比

	CMLT5551HCTR	CMLT5551HCBK
描述	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, PICOMINI-6
厂商名称	Central Semiconductor	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
针数	6	6
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
最大集电极电流 (IC)	1 A	1 A
集电极-发射极最大电压	160 V	160 V
配置	SINGLE	SINGLE
最小直流电流增益 (hFE)	30	30
JESD-30 代码	R-PDSO-F6	R-PDSO-F6
JESD-609代码	e0	e0
元件数量	1	1
端子数量	6	6
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN
最大功率耗散 (Abs)	0.35 W	0.35 W
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子面层	TIN LEAD	TIN LEAD
端子形式	FLAT	FLAT
端子位置	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz
Base Number Matches	1	1

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