SMART
®
SM5320130UUXSUU
July 26, 1996
Modular Technologies
4MByte (1M x 32) DRAM Module - 1Mx16 based
72-pin SODIMM
Features
•
•
•
•
•
•
•
•
•
•
•
Standard
:
JEDEC (FPM only)
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
1K/4K
Device Physicals
:
400 mil TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
2.350" x 1.000"
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP- 177827-1 (3.3V,
AMP- 177827-2 (3.3V,
AMP- 177827-3 (5.0V,
AMP- 177827-4 (5.0V,
Part Numbers
SM53201300UXSUU
SM53201301UXSUU
SM53201308UXSUU
SM53201309UXSUU
:
:
:
:
FPM,
FPM,
EDO,
EDO,
5.0V
3.3V
5.0V
3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320140U1XSUU
Gold)
Tin)
Gold)
Tin)
:
1Mx32,
1Mx4 based.
Functional Diagram
RAS0#
CAS0#
CAS1#
1Mx16
DRAM
1Mx16
DRAM
RAS2#
CAS2#
CAS3#
DQ0~DQ15
DQ16~DQ31
DQ0 ~ DQ31
Notes: 1.
2.
3.
OEs# of all DRAMs are grounded.
WE# to all DRAMs.
A0~A11 to all DRAMs (A10 & A11 are NC for 1K refresh module).
V
CC
V
SS
Decoupling capacitors
to all devices.
(All specifications of this device are subject to change without notice.)
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A9
A0~A11
A0~A7
DQ0~DQ31
RAS0#, RAS2#
CAS0#~CAS3#
WE#
PD1~PD7
V
CC
V
SS
NC
®
SM5320130UUXSUU
July 26, 1996
Modular Technologies
Pin
No.
Row and Column Addresses
for 1K Refresh Module
Row Addresses for 4K
Refresh Module
Column Addresses for 4K
Refresh Module
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Pin
Designation
V
SS
DQ1
DQ3
DQ5
DQ7
PD1
A1
A3
A5
A10 (Note)
DQ8
DQ10
DQ12
DQ14
A11 (Note)
A8
NC
DQ15
DQ16
V
SS
CAS2#
CAS1#
NC
WE#
DQ18
DQ20
DQ22
NC
DQ25
DQ28
V
CC
DQ30
NC
PD3
PD5
PD7
Pin
No.
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Pin
Designation
DQ0
DQ2
DQ4
DQ6
V
CC
A0
A2
A4
A6
NC
DQ9
DQ11
DQ13
A7
V
CC
A9
RAS2#
NC
DQ17
CAS0#
CAS3#
RAS0#
NC
NC
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
PD4
PD6
V
SS
Presence Detect Pins
1K Refresh
Access Time
Pin
60ns
70ns
PD1
NC
NC
PD2
V
SS
V
SS
PD3
V
SS
V
SS
PD4
NC
NC
PD5
NC
V
SS
PD6
NC
NC
PD7
NC
NC
80ns
NC
V
SS
V
SS
NC
NC
V
SS
NC
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
4K Refresh
Access Time
60ns
70ns
NC
NC
V
SS
V
SS
NC
NC
NC
NC
NC
V
SS
NC
NC
NC
NC
80ns
NC
V
SS
NC
NC
NC
V
SS
NC
Note : A10 & A11 are NC for 1K refresh module.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
®
SM5320130UUXSUU
July 26, 1996
Modular Technologies
DC Characteristics
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
2
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
2
0 to +70
- 55 to +150
50
Unit
V
W
°C
°C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Vcc=3.3V
Min
Typ
Max
3.0
3.3
3.6
0
0
0
2.0
-
V
CC
+0.3
-0.3
-
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
0
0
2.4
-
V
CC
+1.0
-1.0
-
0.8
Unit
V
V
V
V
Capacitance
(V
CC
= 3.3V±10%/5.0V±10%, T
A
= +25°C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, CAS#)
Input Capacitance (WE#)
Input/Output Capacitance (Data)
Notes:
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
20
17
24
17
Unit
pF
pF
pF
pF
Capacitance is sampled per Mil-Std-883.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5320130UUXSUU
July 26, 1996
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤V
out
≤
V
CC
Dout = Disable
High I
out
= -2mA
Low I
out
= 2mA
60ns
Min
Max
-20
20
-10
10
2.4
-
-
0.4
70ns
Min
Max
-20
20
-10
10
2.4
-
-
0.4
80ns
Min
Max
-20
20
-10
10
2.4
-
-
0.4
Unit
µA
µA
V
V
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤V
out
≤
V
CC
Dout = Disable
High I
out
= -5mA
Low I
out
= 4.2mA
60ns
Min
Max
-20
20
-10
10
2.4
-
-
0.4
70ns
Min
Max
-20
20
-10
10
2.4
-
-
0.4
80ns
Min
Max
-20
20
-10
10
2.4
-
-
0.4
Unit
µA
µA
V
V
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
®
SM5320130UUXSUU
July 26, 1996
Modular Technologies
DC Characteristics (cont’d)
FPM-based Module
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Symbol
Test Conditions
Operating Current
I
CC1
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
Refresh 60ns
1K
300
4K
180
4
Max.
70ns
280
160
4
Unit
80ns
260
140
4
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
2
1K
4K
1K
4K
1K
4K
300
180
300
180
200
180
2
280
160
280
160
180
160
2
260
140
260
140
160
140
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
1, 3
1, 3
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Symbol
Test Conditions
Operating Current
I
CC1
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
Refresh 60ns
1K
320
4K
200
4
Max.
70ns
300
180
4
Unit
80ns
280
160
4
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
2
1K
4K
1K
4K
1K
4K
320
200
320
200
220
200
2
300
180
300
180
200
180
2
280
160
280
160
180
160
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open
condition.
2. Address can be changed once or less while RAS
#
= V
IL
.
3. Address can be changed once or less while CAS
#
= V
IH
.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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