FLL600IQ-2C
L-Band High Power GaAs FET
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 60W (Typ.)
High PAE: 51% (Typ.)
Broad Frequency Range: 2100 to 2200 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in W-CDMA and IMT 2000 base
station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
125
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Symbol
I
DSS
V
p
V
GSO
P
out
GL
I
DSR
η
add
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 151mA
I
GS
= -1.51mA
V
DS
= 12V
f = 2.17 GHz
I
DS
= 1.5A
Pin = 39dBm
Channel to Case
Limits
Min. Typ. Max.
-
-0.1
-5
47.0
11.0
-
-
-
6
-0.3
-
48.0
12.0
9
51
0.8
-
-0.5
-
-
-
13
-
1.2
Unit
A
V
V
dBm
dB
A
%
°C/W
Edition 1.0
February 2000
1
FLL600IQ-2C
L-Band High Power GaAs FET
Case Style "IQ"
2.5 MIN.
2
1
0.1
(0.004)
8.0
(0.315)
±0.2
3
6.0
(0.236)
±0.2
2.5 MIN.
4-R1.3
(0.051)
±0.15
2.0
(0.079)
4
5
17.4
(0.685)
±0.2
2.4
(0.094)
±0.13
1.9
(0.075)
16.4
(0.646)
±0.2
4.4 Max.
1, 2: Gate
3: Source
4, 5: Drain
Unit: mm (inches)
20.4
(0.803)
24.0
(0.945)
±0.2
±0.2
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FME, QDD (European Sales Office)
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI1199M200
4
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