1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
1Mb SYNCBURST
SRAM
FEATURES
™
MT58L64L18F, MT58L32L32F,
MT58L32L36F
3.3V V
DD
, 3.3V I/O, Flow-Through
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
DD
)
• Separate +3.3V +0.3V/-0.165V isolated output buffer
supply (V
DD
Q)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and
address pipelining
• Clock-controlled and registered addresses, data I/Os
and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 100-lead TQFP package for high density, high speed
• Low capacitive bus loading
• x18, x32 and x36 versions available
100-Pin TQFP*
*JEDEC-standard MS-026 BHA (LQFP).
OPTIONS
• Timing (Access/Cycle/MHz)
7.5ns/8.8ns/113 MHz
8.5ns/10ns/100 MHz
10ns/15ns/66 MHz
• Configurations
64K x 18
32K x 32
32K x 36
• Package
100-pin TQFP
MARKING
-7.5
-8.5
-10
MT58L64L18F
MT58L32L32F
MT58L32L36F
T
None
IT
(CLK). The synchronous inputs include all addresses, all
data inputs, active LOW chip enable (CE#), two additional
chip enables for easy depth expansion (CE2, CE2#), burst
control inputs (ADSC#, ADSP#, ADV#), byte write enables
(BWx#) and global write (GW#).
Asynchronous inputs include the output enable (OE#),
snooze enable (ZZ) and clock (CLK). There is also a burst
mode pin (MODE) that selects between interleaved and
linear burst modes. The data-out (Q), enabled by OE#, is
also asynchronous. WRITE cycles can be from one to two
bytes wide (x18) or from one to four bytes wide (x32/x36),
as controlled by the write control inputs.
Burst operation can be initiated with either address status
processor (ADSP#) or address status controller (ADSC#)
input pins. Subsequent burst addresses can be internally
generated as controlled by the burst advance pin (ADV#).
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE cycles.
Individual byte enables allow individual bytes to be written.
During WRITE cycles on the x18 device, BWa# controls
DQa pins and DQPa; BWb# controls DQb pins and DQPb.
During WRITE cycles on the x32 and x36 devices, BWa#
controls DQa pins and DQPa; BWb# controls DQb pins and
DQPb; BWc# controls DQc pins and DQPc; BWd# controls
DQd pins and DQPd. GW# LOW causes all bytes to be
written. Parity bits are only available on the x18 and x36
versions.
• Operating Temperature Range
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
• Part Number Example: MT58L32L36FT-10 IT
GENERAL DESCRIPTION
The Micron
®
SyncBurst
™
SRAM family employs high-
speed, low-power CMOS designs that are fabricated using
an advanced CMOS process.
The MT58L64L18F and MT58L32L32/36F 1Mb SRAMs
integrate a 64K x 18, 32K x 32, or 32K x 36 SRAM core with
advanced synchronous peripheral circuitry and a 2-bit
burst counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock input
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
All registered and unregistered trademarks are the sole property of their respective companies.
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
FUNCTIONAL BLOCK DIAGRAM
64K x 18
16
SA0, SA1, SA
MODE
ADV#
CLK
ADDRESS
REGISTER
16
14
16
2
SA0-SA1
SA1'
BINARY Q1
COUNTER AND
LOGIC
CLR
Q0
SA0'
ADSC#
ADSP#
BYTE “b”
WRITE REGISTER
9
BYTE “b”
WRITE DRIVER
9
64K x 9 x 2
MEMORY
ARRAY
9
18
SENSE
18
AMPS
OUTPUT
BUFFERS
18
BWb#
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
9
BYTE “a”
WRITE DRIVER
DQs
DQPa
DQPb
ENABLE
REGISTER
18
INPUT
REGISTERS
2
FUNCTIONAL BLOCK DIAGRAM
32K x 32/36
15
SA0, SA1, SA
MODE
ADV#
CLK
BINARY Q1
SA1'
COUNTER
AND LOGIC
Q0
CLR
SA0'
ADDRESS
REGISTER
15
SA0-SA1
13
15
ADSC#
ADSP#
BWd#
BYTE “d”
WRITE REGISTER
BYTE “d”
WRITE DRIVER
BYTE “c”
WRITE DRIVER
BYTE “b”
WRITE DRIVER
BYTE “a”
WRITE DRIVER
INPUT
REGISTERS
32K x 8 x 4
(x32)
32K x 9 x 4
(x36)
SENSE
AMPS
OUTPUT
BUFFERS
BWc#
BYTE “c”
WRITE REGISTER
DQs
BWb#
BYTE “b”
WRITE REGISTER
MEMORY
ARRAY
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
4
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and timing
diagrams for detailed information.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
GENERAL DESCRIPTION (continued)
Micron’s 1Mb SyncBurst SRAMs operate from a +3.3V
power supply, and all inputs and outputs are TTL-
compatible. The device is ideally suited for 486, Pentium
®
,
680X0 and PowerPC systems and systems that benefit from
a very wide data bus. The device is also ideal in generic
16-, 18-, 32-, 36-, 64- and 72-bit-wide applications.
Please refer to the Micron Web site (www.micron.com/
mti/msp/html/sramprod.html)
for the latest data sheet.
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x18
NC
NC
NC
x32/x36
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32/x36
V
SS
V
DD
Q
NC
DQd
NC
DQd
NC
NC/DQPd**
MODE
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
NC/SA*
NC/SA*
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x18
NC
NC
NC
x32/x36
NC/DQPa**
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32/x36
V
SS
V
DD
Q
DQb
DQb
NC/DQPb**
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
NC
NC
SA
NC
NC
DQb
DQb
NC
NC
DQb
DQb
DQb
DQb
DQa
DQa
NC
NC
DQb
DQb
DQPb
NC
DQa
DQa
DQPa
NC
* Pins 49 and 50 are reserved for address expansion.
** No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
PIN ASSIGNMENT (Top View)
100-Pin TQFP
(D-1)
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
NC/SA*
NC/SA*
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NC/DQPb**
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NC/DQPa**
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
NC/SA*
NC/SA*
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
* Pins 49 and 50 are reserved for address expansion.
** No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NC/DQPd**
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
TQFP PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
SA0
SA1
SA
TYPE
Input
DESCRIPTION
Synchronous Address Inputs: These inputs are registered and must
meet the setup and hold times around the rising edge of CLK.
37
37
36
36
32-35, 44-48, 32-35, 44-48,
80-82, 99,
81, 82, 99,
100
100
93
94
–
–
93
94
95
96
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
individual bytes to be written and must meet the setup and hold
times around the rising edge of CLK. A byte write enable is LOW
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa pins and DQPa; BWb# controls DQb pins and
DQPb. For the x32 and x36 versions, BWa# controls DQa pins and
DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. Parity is only
available on the x18 and x36 versions.
Byte Write Enable: This active LOW input permits BYTE WRITE
operations and must meet the setup and hold times around the rising
edge of CLK.
Global Write: This active LOW input allows a full 18-, 32- or 36-bit
WRITE to occur independent of the BWE# and BWx# lines and must
meet the setup and hold times around the rising edge of CLK.
Clock: This signal registers the address, data, chip enable, byte write
enables and burst control inputs on its rising edge. All synchronous
inputs must meet setup and hold times around the clock’s rising
edge.
Synchronous Chip Enable: This active LOW input is used to enable
the device and conditions the internal use of ADSP#. CE# is sampled
only when a new external address is loaded.
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
Output Enable: This active LOW, asynchronous input enables the
data I/O output drivers.
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after the
external address is loaded. A HIGH on this pin effectively causes wait
states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
Synchronous Address Status Processor: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ is performed using the new address,
independent of the byte write enables and ADSC#, but dependent
upon CE#, CE2 and CE2# . ADSP# is ignored if CE# is HIGH. Power-
down state is entered if CE2 is LOW or CE2# is HIGH.
87
87
BWE#
Input
88
88
GW#
Input
89
89
CLK
Input
98
98
CE#
Input
92
92
CE2#
Input
97
97
CE2
Input
86
83
86
83
OE#
ADV#
Input
Input
84
84
ADSP#
Input
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
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