LTC4413
Dual 2.6A, 2.5V to 5.5V,
Ideal Diodes in 3mm
×
3mm DFN
FEATURES
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DESCRIPTIO
2-Channel Ideal Diode ORing or Load Sharing
Low Loss Replacement for ORing Diodes
Low Forward ON Resistance (100mΩ Max at 3.6V)
Low Reverse Leakage Current (1µA Max)
Small Regulated Forward Voltage (28mV Typ)
2.5V to 5.5V Operating Range
2.6A Maximum Forward Current
Internal Current Limit and Thermal Protection
Slow Turn-Off to Protect Against Inductive Source
Impedance-Induced Voltage Spiking
Low Quiescent Current
Status Output to Indicate if Selected Channel is
Conducting
Programmable Channel ON/OFF
Low Profile (0.75mm) 10-Lead 3mm
×
3mm DFN
Package
The LTC
®
4413 contains two monolithic ideal diodes, each
capable of supplying up to 2.6A from input voltages be-
tween 2.5V and 5.5V. Each ideal diode uses a 100mΩ
P-channel MOSFET that independently connects INA to
OUTA and INB to OUTB. During normal forward operation
the voltage drop across each of these diodes is regulated
to as low as 28mV. Quiescent current is less than 40µA for
diode currents up to 1A. If either of the output voltages
exceeds its respective input voltages, that MOSFET is turned
off and less than 1µA of reverse current will flow from OUT
to IN. Maximum forward current in each MOSFET is lim-
ited to a constant 2.6A and internal thermal limiting cir-
cuits protect the part during fault conditions.
Two active-high control pins independently turn off the
two ideal diodes contained within the LTC4413, control-
ling the operation mode as described by Table 3. When the
selected channel is reverse biased, or the LTC4413 is put
into low power standby, a status signal indicates this con-
dition with a low voltage.
A 9µA open-drain STAT pin is used to indicate conduction
status. When terminated to a positive supply through a 470k
resistor, the STAT pin can be used to indicate that the se-
lected diode is conducting with a HIGH voltage. This signal
can also be used to drive an auxiliary P-channel MOSFET
power switch to control a third alternate power source when
the LTC4413 is not conducting forward current.
The LTC4413 is housed in a 10-lead DFN package.
APPLICATIO S
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Battery and Wall Adapter Diode ORing in Handheld
Products
Backup Battery Diode ORing
Power Switching
USB Peripherals
Uninterruptable Supplies
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
TYPICAL APPLICATIO
ENBA
GND
ENBB
WALL
ADAPTER
(0V TO 5.5V)
INB
10µF
LTC4413 vs 1N5817 Schottky
2000
V
CC
LTC4413
STAT
OUTB
470k
STAT IS HIGH WHEN
BAT IS SUPPLYING
LOAD CURRENT
1500
I
OUT
(mA)
1000
1N5817
CONTROL CIRCUIT
INA
BAT
OUTA
4.7µF
4413 TA01
500
TO LOAD
0
0
100
200
V
FWD
(mV)
300
400
4413 TA01b
U
LTC4413
4413f
U
U
1
LTC4413
ABSOLUTE
MAXIMUM
RATINGS
(Note 1)
PACKAGE/ORDER INFORMATION
TOP VIEW
INA
ENBA
GND
ENBB
INB
1
2
3
4
5
11
10 OUTA
9 STAT
8 NC
7 NC
6 OUTB
INA, INB, OUTA, OUTB, STAT,
ENBA, ENBB Voltage ................................... –0.3V to 6V
Operating Temperature Range ................ – 40°C to 85°C
Storage Temperature Range ................. – 65°C to 125°C
Continuous Power Dissipation
(Derate 25mW/°C Above 70°C) ....................... 1500mW
ORDER PART
NUMBER
LTC4413EDD
DD PART
MARKING
LBGN
DD PACKAGE
10-LEAD (3mm
×
3mm) PLASTIC DFN
T
JMAX
= 125°C,
θ
JA
= 40°C/W (4-LAYER PCB)
EXPOSED PAD (PIN 11) IS GND
MUST BE SOLDERED TO PCB
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL
V
IN
, V
OUT
UVLO
I
QF
I
LEAK
I
QRGND
I
QROUTA
PARAMETER
Operating Supply Range for Channel A or B
UVLO Turn-On Rising Threshold
UVLO Turn-Off Falling Threshold
The
●
indicates specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Notes 2, 6)
CONDITIONS
V
IN
and/or V
OUT
Must be in This Range
for Proper Operation
Max (V
INA
, V
INB
, V
OUTA
, V
OUTB
)
Max (V
INA
, V
INB
, V
OUTA
, V
OUTB
)
●
●
●
●
●
MIN
2.5
TYP
MAX
5.5
2.4
UNITS
V
V
V
µA
µA
µA
µA
1.7
25
–1
0.5
22
30
2
30
23
Quiescent Current in Forward Regulation (Note 3) V
INA
= 3.6V, I
OUTA
= –100mA, V
INB
= 0V,
I
OUTB
= 0mA
Current Drawn from or Sourced into IN when
V
OUT
is Greater than V
IN
Quiescent Current While in Reverse Turn-Off,
Measured via GND
Quiescent Current While in Reverse Turn-Off,
Current Drawn from V
OUTA
when OUTA
Supplies Chip Power
Quiescent Current While in Reverse Turn-Off,
Current Drawn from V
OUTA
when OUTB
Supplies Chip Power
Quiescent Current with Both ENBA
and ENBB High
Reverse Turn-Off Voltage (V
OUT
– V
IN
)
Forward Voltage Drop (V
IN
– V
OUT
)
at I
OUT
= –1mA
On Resistance, R
FWD
Regulation
(Measured as
∆V/∆I)
On Resistance, R
ON
Regulation
(Measured as V/I at I
IN
= 1A)
PowerPath
TM
Turn-Off Time
V
IN
= 3.6V, V
OUT
= 5.5V (Note 6)
V
INA
, V
INB
, V
OUTB
< V
OUTA
= 5.5V,
V
STAT
= 0V
V
INA
, V
INB
, V
OUTB
< V
OUTA
= 5.5V
●
17
I
QROUTB
V
INA
, V
INB
, V
OUTA
< V
OUTB
= 5.5V
●
2
3
I
QOFF
V
RTO
V
FWD
R
FWD
R
ON
t
OFF
V
INA
= V
INB
= 3.6V, V
ENBA
and
V
ENBB
High, V
STAT
= 0V
V
IN
= 3.6V
V
IN
= 3.6V
V
IN
= 3.6V, I
OUT
= –100mA
V
IN
= 3.6V, I
OUT
= –500mA (Note 5)
V
IN
= 3.6V, I
OUT
= –1.5A (Note 5)
V
IN
= 3.6V, I
OUT
= –100mA
●
20
–5
27
10
●
28
38
140
100
140
4
200
PowerPath is a trademark of Linear Technology Corporation.
2
U
W
U
U
W W
W
µA
µA
mV
mV
mΩ
mΩ
mΩ
µs
4413f
LTC4413
ELECTRICAL CHARACTERISTICS
SYMBOL
I
OC
I
QOC
PARAMETER
Current Limit
Quiescent Current While in
Overcurrent Operation
STAT Off Current
STAT Sink Current
STAT Pin Turn-On Time
STAT Pin Turn-Off Time
ENB Inputs Rising Threshold Voltage
ENB Inputs Falling Threshold Voltage
ENB Inputs Hysteresis
ENB Inputs Pull-Down Current
Short-Circuit Response
The
●
indicates specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Notes 2, 6)
CONDITIONS
V
INX
= 3.6V (Notes 4, 5)
V
INX
= 3.6V, I
OUT
= 1.9A (Notes 4, 5)
MIN
1.8
150
300
TYP
MAX
UNITS
A
µA
STAT Output
I
SOFF
I
SON
t
S(ON)
t
S(OFF)
ENB Inputs
V
ENBIH
V
ENBIL
V
ENBHYST
I
ENB
V
ENB
Rising
V
ENB
Falling
V
ENBHYST
= (V
ENBIH
– V
ENBIL
)
V
OUT
< V
IN
= 3.6V, V
ENB
> V
ENBIL
●
●
●
Shutdown
V
IN
> V
OUT
, V
CTL
< V
IL
, I
OUT
< I
MAX
●
–1
7
0
9
1
1
540
1
13
µA
µA
µs
µs
600
mV
mV
mV
400
1.5
460
90
3
4.5
µA
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
The LTC4413 is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C ambient
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3:
Quiescent current increases with diode current, refer to plot of I
QF
vs I
OUT
.
Note 4:
This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions.
Overtemperature protection will become active at a junction temperature
greater than the maximum operating temperature. Continuous operation
above the specified maximum operating junction temperature may impair
device reliability.
Note 5:
This specification is guaranteed by correlation to wafer-level
measurements.
Note 6:
Unless otherwise specified, current into a pin is positive and
current out of a pin is negative. All voltages referenced to GND.
4413f
3
LTC4413
TYPICAL PERFOR A CE CHARACTERISTICS
I
QF
vs I
LOAD
200
120°C
80°C
40°C
0°C
–40°C
I
QF
(µA)
200
120°C
80°C
40°C
0°C
–40°C
160
I
QF
(µA)
I
QF
(µA)
120
80
40
0
100E-6
1E-3
10E-3 100E-3
I
LOAD
(A)
I
OC
vs Temperature (V
IN
= 3.5V)
4
2.20
2.15
3
I
OC
(A)
2.05
2.00
UVLO TURN-OFF
1.95
1.90
R
FWD
(mΩ)
UVLO (V)
2
1
–40
0
40
80
TEMPERATURE (°C)
R
FWD
vs Temperature (V
IN
= 3.5V)
160
140
120
RFWD I
OUT
= 1A
RFWD I
OUT
= 100mA
100
80
RFWD I
OUT
= 500mA
60
40
20
0
–60
–20
100
60
TEMPERATURE (°C)
20
140
4413 G07
V
FWD
(mV) AND R
FWD
(mΩ)
V
FWD
(mV) AND R
FWD
(mΩ)
R
FWD
(mΩ)
4
U W
1E+0
4413 G01
I
QF
vs I
LOAD
80
I
QF
vs Temperature
I
QF
AT 1A
60
160
120
40
I
QF
AT 100mA
20
80
40
0
10E+0
0
0.50
1
1.50
I
LOAD
(A)
2
2.50
3
0
–40
0
40
TEMPERATURE (°C)
80
120
4413 G03
4413 G02
UVLO Thresholds vs Temperature
120
100
UVLO TURN-ON
2.10
80
60
R
FWD
vs V
IN
at I
LOAD
= 500mA
120°C
80°C
40°C
0°C
–40°C
40
20
0
120
4413 G04
1.85
–40
0
40
TEMPERATURE (°C)
80
120
4413 G05
2.5
3.5
V
INA
(V)
4.5
5.5
4413 G06
V
FWD
and R
FWD
vs I
LOAD
300
250
200
150
R
FWD
100
50
0
300
120°C
80°C
40°C
0°C
–40°C
V
FWD
250
200
150
100
50
0
0
500
1000
1500 2000
I
OUT
(mA)
2500
3000
V
FWD
and R
FWD
vs I
LOAD
120°C
80°C
40°C
0°C
–40°C
R
FWD
V
FWD
1
10
100
I
LOAD
(mA)
1000
10000
4413 G09
4413 G08
4413f
LTC4413
TYPICAL PERFOR A CE CHARACTERISTICS
V
FWD
vs I
LOAD
(V
IN
= 3.5V)
300
250
200
120°C
80°C
40°C
0°C
–40°C
CH4
150
100
50
0
1
10
100
I
LOAD
(mA)
1000
10000
4413 G10
V
FWD
(mV)
ENB Threshold vs Temperature
550
V
IH
500
ENB HYSTERESIS (mV)
ENB THRESHOLD (mV)
450
V
IL
400
350
300
–40
0
– I
LEAK
vs Temperature at
V
REVERSE
= 5.5V
10E-6
10E-6
1E-6
–I
LEAK
(A)
–I
LEAK
(A)
100E-9
10E-9
1E-9
–40
0
U W
ENB Turn-On
CH4
CH4
CH2
CH1
CH3
ENB Turn-Off
CH3
CH2
CH3
CH2
CH1
CH1
400µs/DIV
4413 G11
20µs/DIV
CH4 = I
OUT
(200mA/DIV)
CH3 = V
OUT
(2V/DIV)
CH2 = V
STAT
(2V/DIV)
CH1 = V
ENBA
(500mV/DIV)
4413 G12
CH4 = I
OUT
(500mA/DIV)
CH3 = V
OUT
(2V/DIV)
CH2 = V
STAT
(2V/DIV)
CH1 = V
ENBA
(500mV/DIV)
ENB Hysteresis vs Temperature
120
100
80
60
40
20
0
–40
80
40
TEMPERATURE (°C)
120
4413 G13
0
40
80
TEMPERATURE (°C)
120
4413 G14
– I
LEAK
vs V
REVERSE
80°C
40°C
0°C
–40°C
1E-6
100E-9
10E-9
1E-9
40
80
TEMPERATURE (°C)
120
4413 G15
0
1
2
3
V
REVERSE
(V)
4
5
4413 G16
4413f
5
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