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Datasheet> 器件分类 > 存储> 存储> HYS72V16200GR-8B

HYS72V16200GR-8B: 产品描述Synchronous DRAM Module, 16MX72, 6ns, CMOS, DIMM-168; 产品类别存储存储; 文件大小159KB，共22页; 制造商SIEMENS; 官网地址http://www.infineon.com/

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HYS72V16200GR-8B概述

Synchronous DRAM Module, 16MX72, 6ns, CMOS, DIMM-168

HYS72V16200GR-8B规格参数

参数名称	属性值
厂商名称	SIEMENS
零件包装代码	DIMM
包装说明	,
针数	168
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
最长访问时间	6 ns
JESD-30 代码	R-XDMA-N168
内存密度	1207959552 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	168
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	16MX72
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL
Base Number Matches	1

HYS72V16200GR-8B相似产品对比

	HYS72V16200GR-8B	HYS72V32200GR-8B	NT5S26400FS14	NTHS0603N06N2701JR	HYS72V32220GR-8	HYS72V32220GR-8B	HYS72V128220GR-8	HYS72V128220GR-8B	HYS72V8200GR-8B
描述	Synchronous DRAM Module, 16MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	RESISTOR, METAL FILM, 0.5 W, 1 %, 15 ppm, 2640 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT	NTC Thermistor, 2700ohm, Surface Mount, CHIP, 0603	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168
Reach Compliance Code	unknown	unknown	unknown	compliant	unknown	unknown	unknown	unknown	unknown
端子数量	168	168	2	2	168	168	168	168	168
封装形状	RECTANGULAR	RECTANGULAR	TUBULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
表面贴装	NO	NO	NO	YES	NO	NO	NO	NO	NO
厂商名称	SIEMENS	SIEMENS	-	-	SIEMENS	SIEMENS	SIEMENS	SIEMENS	SIEMENS
零件包装代码	DIMM	DIMM	-	-	DIMM	DIMM	DIMM	DIMM	DIMM
针数	168	168	-	-	168	168	168	168	168
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-	-	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	6 ns	6 ns	-	-	6 ns	6 ns	6 ns	6 ns	6 ns
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	-	-	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	1207959552 bit	4831838208 bit	-	-	2415919104 bit	2415919104 bit	4831838208 bit	4831838208 bit	603979776 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-	-	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	72	72	-	-	72	72	72	72	72
功能数量	1	1	-	-	1	1	1	1	1
端口数量	1	1	-	-	1	1	1	1	1
字数	16777216 words	67108864 words	-	-	33554432 words	33554432 words	67108864 words	67108864 words	8388608 words
字数代码	16000000	64000000	-	-	32000000	32000000	64000000	64000000	8000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	155 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C
组织	16MX72	64MX72	-	-	32MX72	32MX72	64MX72	64MX72	8MX72
封装主体材料	UNSPECIFIED	UNSPECIFIED	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	3.6 V	3.6 V	-	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	-	-	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	-	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
技术	CMOS	CMOS	METAL FILM	-	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	-	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	-	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	-	DUAL ENDED	DUAL	DUAL	DUAL	DUAL	DUAL

HYS72V16200GR-8B

HYS72V16200GR-8B概述

HYS72V16200GR-8B规格参数

HYS72V16200GR-8B相似产品对比

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